Discrete Semiconductors Datasheets
588 Discrete Semiconductors datasheets read into specs, pinouts and ratings. Parts from onsemi, Diodes and Infineon Technologies.
Discrete Semiconductors datasheets, page 13
588 parts · page 13 of 20. Most used first, then by part number.
MURA120T3G
onsemi
DIODE STANDARD 200V 1A SMA
MURA120T3G-JSM
JSMICRO
Surface mount glass-passivated ultrafast rectifier, 1 A, 200 V, with low forward voltage and 35 ns reverse recovery in SMA package
NCD0603W1
Foshan NationStar Optoelectronics
LED Indicators Luminous color: white 130 ° 200-300mcd 0603
NRVA4003
onsemi
Automotive-grade (AEC-Q101) glass-passivated 1 A standard recovery rectifier diode in SMA surface mount package, 300 V rating for NRVA4003
NRVA4003T3G
onsemi
NRVA4004
onsemi
Automotive AEC-Q101 qualified 1 A, 400 V standard recovery power rectifier with glass passivated junction in SMA surface mount package
NRVA4004T3G
onsemi
NRVA4005
onsemi
Automotive-grade (AEC-Q101) 1 A, 600 V glass-passivated standard recovery rectifier in SMA surface mount package
NRVA4005T3G
onsemi
NRVA4006
onsemi
Automotive-grade (AEC-Q101) 1 A, 800 V glass-passivated standard recovery rectifier diode in SMA surface-mount package
NRVA4006T3G
onsemi
NRVA4007
onsemi
Automotive-qualified (AEC-Q101) 1 A, 1000 V standard recovery glass-passivated power rectifier in an SMA surface mount package
NRVA4007T3G
onsemi
NTA/NTE4151P
onsemi
NTA4151PT1
onsemi
NTA4151PT1G
onsemi
MOSFET P-CH 20V 760MA SC75
NTD20N06L
onsemi
NTE4151PT1G
onsemi
NTMD4184P
Uniroyal Electronics
Dual-die FETKY device combining a -30 V, -4.0 A P-channel power MOSFET with an independent 20 V, 2.2 A Schottky barrier diode in a SOIC-8 package, for DC-DC converters, disk drives and printers.
NTMD4184PFR2G
onsemi
Single P-channel power MOSFET (-30 V, -4.0 A) co-packaged with an independent-pinout 20 V, 2.2 A Schottky barrier diode (FETKY) in SOIC-8 for DC-DC converters, disk drives and printers.
OPTIMOS-6
Infineon Technologies
100 V OptiMOS 6 N-channel normal-level power MOSFET with 2.7 mΩ max RDS(on) and 192 A continuous drain current, optimized for high-frequency switching and synchronous rectification
OPTIMOS5
Infineon Technologies
OptiMOS 5 60 V N-channel power MOSFET with 1.2 mΩ max RDS(on) and 306 A drain current, optimized for synchronous rectification
OPTIMOSTM-6
Infineon Technologies
N-channel power MOSFET with 100V breakdown voltage, very low on-resistance, optimized for high-frequency switching and synchronous rectification.
P2N2222AG
onsemi
General-purpose NPN silicon amplifier/switching transistor, 40V VCEO, 600mA continuous collector current, Pb-free TO-92 package
P2N2222ARL1G
onsemi
General-purpose NPN silicon bipolar amplifier/switching transistor, 40V Vceo, 600mA continuous collector current, in TO-92 package
PDTC114E
Nexperia
PDTC114EU
Nexperia
NPN Resistor-Equipped Transistor (RET) with built-in bias resistors (R1=10kΩ, R2=10kΩ) in a SOT323 (SC-70) package, capable of 100 mA output current.
PESD3V3L1BA
Nexperia
Bidirectional ESD protection diode in a very small SOD323 package, designed to protect one signal line from ESD and other transients.
PESD3V3L4UF
Nexperia
Low capacitance unidirectional quadruple ESD protection diode array protecting up to four signal lines, 3.3 V standoff, IEC 61000-4-2 level 4 compliant
PESD3V3L4UG
Nexperia
Low capacitance unidirectional quadruple ESD protection diode array protecting up to four signal lines, 3.3 V standoff, in SOT353 (SC-88A) package