P2N2222AG
NPN Silicon Amplifier TransistorThe P2N2222AG is a npn silicon amplifier transistor from onsemi. View the full P2N2222AG datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official P2N2222AG datasheet (PDF) — the source this page was extracted from.
P2N2222AG Key Specifications
| Parameter | Value |
|---|---|
| Polarity | NPN |
| Noise Figure | 4.0dB max |
| Output Capacitance (Cobo) | 8.0pF max |
| Emitter-Base Voltage (VEBO) | 6.0V |
| Power Dissipation (TA=25°C) | 625mW |
| Power Dissipation (TC=25°C) | 1.5W |
| Collector-Base Voltage (VCBO) | 75V |
| Collector Current (Continuous) | 600mA |
| Collector-Emitter Voltage (VCEO) | 40V |
| Thermal Resistance Junction-Case | 83.3°C/W |
| Current-Gain Bandwidth Product (FT) | 300MHz min |
| Thermal Resistance Junction-Ambient | 200°C/W |
| Operating/Storage Junction Temperature | -55°C to +150°C |
| DC Current Gain (HFE) At IC=150mA, VCE=10V | 100 to 300 |
| Collector-Emitter Saturation Voltage (IC=150mA) | 0.3V max |
P2N2222AG Overview
Part: P2N2222AG / P2N2222ARL1G — onsemi
Type: NPN Silicon Amplifier Transistor
Description: NPN silicon amplifier transistor with 40 V Collector-Emitter breakdown voltage, 600 mA continuous collector current, and 300 MHz current-gain-bandwidth product.
Operating Conditions:
- Operating temperature: -55 to +150 °C
- Max continuous collector current: 600 mAdc
Absolute Maximum Ratings:
- Max Collector-Emitter Voltage (V_CEO): 40 Vdc
- Max Collector-Base Voltage (V_CBO): 75 Vdc
- Max Emitter-Base Voltage (V_EBO): 6.0 Vdc
- Max continuous current: 600 mAdc
- Max junction/storage temperature: +150 °C
Key Specs:
- Collector-Emitter Breakdown Voltage (V(BR)CEO): 40 Vdc (I_C = 10 mAdc, I_B = 0)
- DC Current Gain (h_FE): 75 min (I_C = 10 mAdc, V_CE = 10 Vdc)
- Collector-Emitter Saturation Voltage (V_CE(sat)): 0.3 Vdc max (I_C = 150 mAdc, I_B = 15 mAdc)
- Base-Emitter Saturation Voltage (V_BE(sat)): 0.6 Vdc min, 1.2 Vdc max (I_C = 150 mAdc, I_B = 15 mAdc)
- Current-Gain-Bandwidth Product (f_T): 300 MHz min (I_C = 20 mAdc, V_CE = 20 Vdc, f = 100 MHz)
- Output Capacitance (C_obo): 8.0 pF max (V_CB = 10 Vdc, I_E = 0, f = 1.0 MHz)
- Delay Time (t_d): 10 ns max (V_CC = 30 Vdc, V_BE(off) = -2.0 Vdc, I_C = 150 mAdc, I_B1 = 15 mAdc)
- Storage Time (t_s): 225 ns max (V_CC = 30 Vdc, I_C = 150 mAdc, I_B1 = I_B2 = 15 mAdc)
Features:
- Pb-Free Devices
Applications:
- Amplifier Transistors
Package:
- TO-92
P2N2222AG Electrical Characteristics
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| OFF CHARACTERISTICS | ||||
| Collector - Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) | V (BR)CEO | 40 | - | Vdc |
| Collector - Base Breakdown Voltage (I C = 10 m Adc, I E = 0) | V (BR)CBO | 75 | - | Vdc |
| Emitter - Base Breakdown Voltage (I E = 10 m Adc, I C = 0) | V (BR)EBO | 6.0 | - | Vdc |
| Collector Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) | I CEX | - | 10 | nAdc |
| Collector Cutoff Current (V CB = 60 Vdc, I E = 0) (V CB = 60 Vdc, I E = 0, T A = 150 ° C) | I CBO | - - | 0.01 10 | m Adc |
| Emitter Cutoff Current (V EB = 3.0 Vdc, I C = 0) | I EBO | - | 10 | nAdc |
| Collector Cutoff Current (V CE = 10 V) | I CEO | - | 10 | nAdc |
| Base Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) | I BEX | - | 20 | nAdc |
| ON CHARACTERISTICS | ||||
| DC Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc, T A = - 55 ° C) (I C = 150 mAdc, V CE = 10 Vdc) (Note 1) (I C = 150 mAdc, V CE = 1.0 Vdc) (Note 1) (I = 500 mAdc, V = 10 Vdc) (Note 1) | h FE | 35 50 75 35 100 50 40 | - - - - 300 - - | - |
| Collector - Emitter Saturation Voltage (Note 1) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) | V CE(sat) | - - | 0.3 1.0 | Vdc |
| Base - Emitter Saturation Voltage (Note 1) (I C = 150 mAdc, I B = 15 mAdc) (I = 500 mAdc, I = 50 mAdc) | V BE(sat) | 0.6 - | 1.2 2.0 | Vdc |
| SMALL - SIGNAL CHARACTERISTICS | ||||
| Current - Gain - Bandwidth Product (Note 2) (I C = 20 mAdc, V CE = 20 Vdc, f = 100 MHz)C | f T | 300 | - | MHz |
| Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) | C obo | - | 8.0 | pF |
| Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) | C ibo | - | 25 | pF |
| Input Impedance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz) | h ie | 2.0 0.25 | 8.0 1.25 | k W |
| Voltage Feedback Ratio (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz) | h re | - - | 8.0 4.0 | X 10 - 4 |
| Small - Signal Current Gain (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz) | h fe | 50 75 | 300 375 | - |
| Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz) | h oe | 5.0 25 | 35 200 | m Mhos |
| Collector Base Time Constant (I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz) | rb ′ C c | - | 150 | ps |
| Noise Figure (I C = 100 m Adc, V CE = 10 Vdc, R S = 1.0 k W , f = 1.0 kHz) | N F | - | 4.0 | dB |
-
Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
-
f T is defined as the frequency at which |h fe | extrapolates to unity.
P2N2222AG Absolute Maximum Ratings
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector - Emitter Voltage | V CEO | 40 | Vdc |
| Collector - Base Voltage | V CBO | 75 | Vdc |
| Emitter - Base Voltage | V EBO | 6.0 | Vdc |
| Collector Current - Continuous | I C | 600 | mAdc |
| Total Device Dissipation@T A = 25 ° C Derate above 25 ° C | P D | 625 5.0 | mW mW/ ° C |
| Total Device Dissipation@T C = 25 ° C Derate above 25 ° C | P D | 1.5 12 | W mW/ ° C |
| Operating and Storage Junction Temperature Range | T J , T stg | - 55 to +150 | ° C |
P2N2222AG Thermal Information
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Thermal Resistance, Junction to Ambient | R q JA | 200 | ° C/W |
| Thermal Resistance, Junction to Case | R q JC | 83.3 | ° C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb -Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| P2N2222ARL1G | onsemi | TO-92 |
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