P2N2222ARL1G

NPN Silicon Amplifier Transistor

The P2N2222ARL1G is a npn silicon amplifier transistor from onsemi. View the full P2N2222ARL1G datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

P2N2222ARL1G shares its datasheet with P2N2222AG, whose page lists every part number it covers.

Official P2N2222ARL1G datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

P2N2222ARL1G Key Specifications

Parameter	Value
Noise Figure	4.0 dB max
Turn-On Time (Td + Tr)	10 ns delay, 25 ns rise max
Turn-Off Time (Ts + Tf)	225 ns storage, 60 ns fall max
Output Capacitance (Cobo)	8.0 pF max
Power Dissipation (TA=25C)	625 mW
Power Dissipation (TC=25C)	1.5 W
Emitter-Base Voltage (VEBO)	6.0 V
Collector-Base Voltage (VCBO)	75 V
Collector Current (Continuous)	600 mA
Collector-Emitter Voltage (VCEO)	40 V
Current-Gain Bandwidth Product (FT)	300 MHz min
Thermal Resistance Junction To Case	83.3 C/W
Operating/Storage Junction Temperature	-55C to +150C
Thermal Resistance Junction To Ambient	200 C/W
DC Current Gain (HFE) At IC=150mA, VCE=10V	100 to 300
Collector-Emitter Saturation Voltage (IC=150mA)	0.3 V max

P2N2222ARL1G Overview

Part: P2N2222AG / P2N2222ARL1G — onsemi

Type: NPN Silicon Amplifier Transistor

Description: NPN silicon amplifier transistor with 40 V Collector-Emitter breakdown voltage, 600 mA continuous collector current, and 300 MHz current-gain-bandwidth product.

Operating Conditions:

Operating temperature: -55 to +150 °C
Max continuous collector current: 600 mAdc

Absolute Maximum Ratings:

Max Collector-Emitter Voltage (V_CEO): 40 Vdc
Max Collector-Base Voltage (V_CBO): 75 Vdc
Max Emitter-Base Voltage (V_EBO): 6.0 Vdc
Max continuous current: 600 mAdc
Max junction/storage temperature: +150 °C

Key Specs:

Collector-Emitter Breakdown Voltage (V(BR)CEO): 40 Vdc (I_C = 10 mAdc, I_B = 0)
DC Current Gain (h_FE): 75 min (I_C = 10 mAdc, V_CE = 10 Vdc)
Collector-Emitter Saturation Voltage (V_CE(sat)): 0.3 Vdc max (I_C = 150 mAdc, I_B = 15 mAdc)
Base-Emitter Saturation Voltage (V_BE(sat)): 0.6 Vdc min, 1.2 Vdc max (I_C = 150 mAdc, I_B = 15 mAdc)
Current-Gain-Bandwidth Product (f_T): 300 MHz min (I_C = 20 mAdc, V_CE = 20 Vdc, f = 100 MHz)
Output Capacitance (C_obo): 8.0 pF max (V_CB = 10 Vdc, I_E = 0, f = 1.0 MHz)
Delay Time (t_d): 10 ns max (V_CC = 30 Vdc, V_BE(off) = -2.0 Vdc, I_C = 150 mAdc, I_B1 = 15 mAdc)
Storage Time (t_s): 225 ns max (V_CC = 30 Vdc, I_C = 150 mAdc, I_B1 = I_B2 = 15 mAdc)

Features:

Pb-Free Devices

Applications:

Amplifier Transistors

Package:

TO-92

P2N2222ARL1G Electrical Characteristics

Characteristic	Symbol	Min	Max	Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0)	V (BR)CEO	40	-	Vdc
Collector - Base Breakdown Voltage (I C = 10 m Adc, I E = 0)	V (BR)CBO	75	-	Vdc
Emitter - Base Breakdown Voltage (I E = 10 m Adc, I C = 0)	V (BR)EBO	6.0	-	Vdc
Collector Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc)	I CEX	-	10	nAdc
Collector Cutoff Current (V CB = 60 Vdc, I E = 0) (V CB = 60 Vdc, I E = 0, T A = 150 ° C)	I CBO	- -	0.01 10	m Adc
Emitter Cutoff Current (V EB = 3.0 Vdc, I C = 0)	I EBO	-	10	nAdc
Collector Cutoff Current (V CE = 10 V)	I CEO	-	10	nAdc
Base Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc)	I BEX	-	20	nAdc
ON CHARACTERISTICS
DC Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc, T A = - 55 ° C) (I C = 150 mAdc, V CE = 10 Vdc) (Note 1) (I C = 150 mAdc, V CE = 1.0 Vdc) (Note 1) (I = 500 mAdc, V = 10 Vdc) (Note 1)	h FE	35 50 75 35 100 50 40	- - - - 300 - -	-
Collector - Emitter Saturation Voltage (Note 1) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc)	V CE(sat)	- -	0.3 1.0	Vdc
Base - Emitter Saturation Voltage (Note 1) (I C = 150 mAdc, I B = 15 mAdc) (I = 500 mAdc, I = 50 mAdc)	V BE(sat)	0.6 -	1.2 2.0	Vdc
SMALL - SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product (Note 2) (I C = 20 mAdc, V CE = 20 Vdc, f = 100 MHz)C	f T	300	-	MHz
Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz)	C obo	-	8.0	pF
Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)	C ibo	-	25	pF
Input Impedance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)	h ie	2.0 0.25	8.0 1.25	k W
Voltage Feedback Ratio (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)	h re	- -	8.0 4.0	X 10 - 4
Small - Signal Current Gain (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)	h fe	50 75	300 375	-
Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)	h oe	5.0 25	35 200	m Mhos
Collector Base Time Constant (I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz)	rb ′ C c	-	150	ps
Noise Figure (I C = 100 m Adc, V CE = 10 Vdc, R S = 1.0 k W , f = 1.0 kHz)	N F	-	4.0	dB

Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
f T is defined as the frequency at which |h fe | extrapolates to unity.

P2N2222ARL1G Absolute Maximum Ratings

Characteristic	Symbol	Value	Unit
Collector - Emitter Voltage	V CEO	40	Vdc
Collector - Base Voltage	V CBO	75	Vdc
Emitter - Base Voltage	V EBO	6.0	Vdc
Collector Current - Continuous	I C	600	mAdc
Total Device Dissipation@T A = 25 ° C Derate above 25 ° C	P D	625 5.0	mW mW/ ° C
Total Device Dissipation@T C = 25 ° C Derate above 25 ° C	P D	1.5 12	W mW/ ° C
Operating and Storage Junction Temperature Range	T J , T stg	- 55 to +150	° C

P2N2222ARL1G Thermal Information

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Ambient	R q JA	200	° C/W
Thermal Resistance, Junction to Case	R q JC	83.3	° C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb -Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
P2N2222AG	onsemi	TO-92

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