OPTIMOS5

Part: BSC012N06NS, Infineon Technologies AG

Type: N-channel Power MOSFET

Description: 60 V, 1.2 mΩ N-channel power MOSFET with a continuous drain current of 306 A, optimized for synchronous rectification.

Operating Conditions:

• Drain-source voltage: up to 60 V
• Operating junction temperature: up to 175 °C
• Channel type: N-channel

Absolute Maximum Ratings:

• Max drain-source voltage (V_DS): 60 V
• Max continuous current (I_D): 306 A (at T_A=25 °C)
• Max junction temperature: 175 °C

Key Specs:

• Drain-source breakdown voltage (V_BR)DSS: 60 V
• Gate threshold voltage V_GS(th): 2.1 V (min), 2.8 V (typ), 3.3 V (max)
• Drain-source on-state resistance R_DS(on): 0.9 mΩ (typ), 1.2 mΩ (max)
• Transconductance g_fs: 85 S (min), 170 S (typ)
• Diode continuous forward current I_S: 179 A (at T_C=25 °C)
• Gate charge total Q_G(0V..10V): 115 nC
• Output charge Q_OSS: 122 nC
• Reverse recovery time t_rr: 41 ns (typ), 82 ns (max)

Features:

• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• 175°C rated
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Higher solder joint reliability due to enlarged source interconnection

Applications:

• null

Package:

• TSON-8-3

• •-Optimizedforsynchronousrectification
• •-100%avalanchetested
• •-Superiorthermalresistance
• •-N-channel
• •-175°Crated
• •-Pb-freeleadplating;-RoHScompliant
• •-Halogen-freeaccordingto-IEC61249-2-21
• •-Highersolderjointreliabilityduetoenlargedsourceinterconnection

Productvalidation

Fullyqualifiedaccordingto-JEDECfor-Industrial-Applications

Table-1-Key-Performance-Parameters

Parameter	Value	Unit
VDS	60	V
RDS(on),max	1.2	mΩ
ID	306	A
QOSS	122	nC
QG(0V..10V)	115	nC

Type / Ordering Code	Package	Marking	Related Links
BSC012N06NS	TSON-8-3	012N06N	-

at T_j=25 °C, unless otherwise specified

Table 4 Static characteristics

Damara dan	Oh al	Values			11:4
Parameter	Symbol	Min.	Typ.	Max.	Unit
Drain-source breakdown voltage	V (BR)DSS	60	-	-	V
Gate threshold voltage	V GS(th)	2.1	2.8	3.3	V
Zero gate voltage drain current	I DSS	-	0.5 10	1 100	μΑ
Gate-source leakage current	I GSS	-	10	100	nA
Drain-source on-state resistance	R DS(on)	-	0.9 1.2	1.2 1.7	mΩ
Gate resistance 1)	R G	-	2.2	3.3	Ω
Transconductance	g fs	85	170	-	S

Damanadan	0	Values
Parameter	Symbol	Min.
Input capacitance 1)	C iss	-
Output capacitance 1)	Coss	-
Reverse transfer capacitance 1)	C rss	-
Turn-on delay time	trm d(on)	-
Rise time	t r	-
Turn-off delay time	trm d(off)	-
Fall time	t f	-

Table 6 Gate charge characteristics²⁾

Danamatan	O. mah al	Values
Parameter	Symbol	Min.
Gate to source charge	Q gs	-
Gate charge at threshold	Qg(th)	-
Gate to drain charge 1)	Q gd	-
Switching charge	Q sw	-
Gate charge total 1)	Qg	-
Gate plateau voltage	V plateau	-
Gate charge total, sync. FET	Q g(sync)	-
Output charge 1)	Q oss	-

Table 2 Maximum ratings

Type / Ordering Code	Package	Marking	Related Links
BSC012N06NS	TSON-8-3	012N06N	-

Thermal characteristics

at T_j=25 °C, unless otherwise specified

Table 3 Thermal characteristics

Parameter	Symbol	Values			Unit	Note / Test Condition
Farameter	Symbol	Min.	Typ.	Max.	Offic	Note / Test Condition
Thermal resistance, junction - case, bottom	R thJC	-	0.35	0.7	K/W	-
Thermal resistance, junction - case, top	R thJC	-	-	20	K/W	-
Device on PCB, 6 cm 2 cooling area 2)	R thJA	-	-	50	K/W	-

¹⁾ Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual

environmental conditions.

1. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.

2. See Diagram 3 for more detailed information

^<sup>4) See Diagram 13 for more detailed information

Electrical characteristics

at T_j=25 °C, unless otherwise specified

Table 4 Static characteristics

Damara dan	Oh al	Values			11:4
Parameter	Symbol	Min.	Typ.	Max.	Unit
Drain-source breakdown voltage	V (BR)DSS	60	-	-	V
Gate threshold voltage	V GS(th)	2.1	2.8	3.3	V
Zero gate voltage drain current	I DSS	-	0.5 10	1 100	μΑ
Gate-source leakage current	I GSS	-	10	100	nA
Drain-source on-state resistance	R DS(on)	-	0.9 1.2	1.2 1.7	mΩ
Gate resistance 1)	R G	-	2.2	3.3	Ω
Transconductance	g fs	85	170	-	S

Damanadan	0	Values
Parameter	Symbol	Min.
Input capacitance 1)	C iss	-
Output capacitance 1)	Coss	-
Reverse transfer capacitance 1)	C rss	-
Turn-on delay time	trm d(on)	-
Rise time	t r	-
Turn-off delay time	trm d(off)	-
Fall time	t f	-

Table 6 Gate charge characteristics²⁾

Danamatan	O. mah al	Values
Parameter	Symbol	Min.
Gate to source charge	Q gs	-
Gate charge at threshold	Qg(th)	-
Gate to drain charge 1)	Q gd	-
Switching charge	Q sw	-
Gate charge total 1)	Qg	-
Gate plateau voltage	V plateau	-
Gate charge total, sync. FET	Q g(sync)	-
Output charge 1)	Q oss	-

Table 7 Reverse diode

Davamatar	Symbol		Values			Nata / Tank Canadikian
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Diode continuous forward current	Is	-	-	179	Α	T C =25 °C
Diode pulse current	I S,pulse	-	-	1224	Α	T C =25 °C
Diode forward voltage	V SD	-	8.0	1.2	V	V GS =0 V, I F =50 A, T j =25 °C
Reverse recovery time 1)	t rr	-	41	82	ns	V R =30 V, I F =50A, d i F /d t =100 A/μs
Reverse recovery charge 1) Q rr		-	170	340	nC	V R =30 V, I F =50A, d i F /d t =100 A/μs

4-Electricalcharacteristicsdiagrams

5-Package-Outlines

	MILLIMETERS
DIMENSION	MIN.
A	-
b	0.34
b1	-
c	0.20
D	4.90
D1	4.25
E	5.90
E1	4.00
E2	3.14
E3	0.20
e	1.27
K2	(0.37)
L	0.60
L1	0.43
L2	(0.25)
DOCUMENT NO. Z8B00187559
-----------------------------	--
REVISION 01
SCALE 10:1
0 1 2mm
EUROPEAN PROJECTION
ISSUE DATE 14.12.2017

OptiMOSTM5-Power-Transistor,-60-V BSC012N06NS

Revision-History

BSC012N06NS

Revision:-2020-02-28,-Rev.-2.3

Previous Revision
-------------------

• Revision Date Subjects (major changes since last revision)
• 2.0 2018-03-08 Release of final version
• 2.1 2018-12-11 Rev. 2.0
• 2.2 2020-02-06 Update current rating
• 2.3 2020-02-28 Update footnotes

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at T_j=25 °C, unless otherwise specified

Table 3 Thermal characteristics

Parameter	Symbol	Values			Unit	Note / Test Condition
Farameter	Symbol	Min.	Typ.	Max.	Offic	Note / Test Condition
Thermal resistance, junction - case, bottom	R thJC	-	0.35	0.7	K/W	-
Thermal resistance, junction - case, top	R thJC	-	-	20	K/W	-
Device on PCB, 6 cm 2 cooling area 2)	R thJA	-	-	50	K/W	-

¹⁾ Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual

environmental conditions.

1. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.

2. See Diagram 3 for more detailed information

^<sup>4) See Diagram 13 for more detailed information