BSC012N06NS
MOSFET
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Overview
Part: BSC012N06NS, Infineon Technologies AG
Type: OptiMOS™5 Power Transistor, MOSFET
Key Specs:
- VDS: 60 V
- RDS(on),max: 1.2 mΩ
- ID: 306 A
- Qoss: 122 nC
- QG(0V..10V): 115 nC
Features:
- Optimized for synchronous rectification
- 100% avalanche tested
- Superior thermal resistance
- N-channel
- 175°C rated
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- Higher solder joint reliability due to enlarged source interconnection
Applications:
- Industrial Applications
Package:
- TSON-8-3: dimensions in mm/inches (no specific values provided)
Features
- •-Optimizedforsynchronousrectification
- •-100%avalanchetested
- •-Superiorthermalresistance
- •-N-channel
- •-175°Crated
- •-Pb-freeleadplating;-RoHScompliant
- •-Halogen-freeaccordingto-IEC61249-2-21
- •-Highersolderjointreliabilityduetoenlargedsourceinterconnection
Productvalidation
Fullyqualifiedaccordingto-JEDECfor-Industrial-Applications
Table-1-----Key-Performance-Parameters
| Parameter | Value | Unit |
|---|---|---|
| VDS | 60 | V |
| RDS(on),max | 1.2 | mΩ |
| ID | 306 | A |
| Qoss | 122 | nC |
| QG(0V..10V) | 115 | nC |
| Type / Ordering Code | Package | Marking | Related Links |
|---|---|---|---|
| BSC012N06NS | TSON-8-3 | 012N06N | - |
| Parameter | Value | Unit |
|---|---|---|
| VDS | 60 | V |
| RDS(on),max | 1.2 | mΩ |
| ID | 306 | A |
| Qoss | 122 | nC |
| Qg(0V..10V) | 115 | nC |
1-----Maximumratings
at-TA=25-°C,unlessotherwisespecified
Table-2-----Maximumratings
| Parameter | Value | Unit |
|---|---|---|
| VDS | 60 | V |
| RDS(on),max | 1.2 | mΩ |
| ID | 306 | A |
| Qoss | 122 | nC |
| Qg(0V..10V) | 115 | nC |
2-----Thermalcharacteristics
at-Tj=25-°C,unlessotherwisespecified
Table-3-----Thermalcharacteristics
| Parameter | Symbol | Values |
|---|---|---|
| Min. | ||
| Thermal resistance, junction - case, bottom | RthJC | - |
| Thermal resistance, junction - case, top | RthJC | - |
| Device on PCB, 6 cm2 cooling area2) | RthJA | - |
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
3-----Electricalcharacteristics
at-Tj=25-°C,unlessotherwisespecified
Table-4-----Staticcharacteristics
| Parameter | Value | Unit |
|---|---|---|
| VDS | 60 | V |
| RDS(on),max | 1.2 | mΩ |
| ID | 306 | A |
| Qoss | 122 | nC |
| Qg(0V..10V) | 115 | nC |
Table-5-----Dynamiccharacteristics
| Parameter | Symbol | Values |
|---|---|---|
| Min. | ||
| Input capacitance1) | Ciss | - |
| Output capacitance1) | Coss | - |
| Reverse transfer capacitance1) | Crss | - |
| Turn-on delay time | td(on) | - |
| Rise time | tr | - |
| Turn-off delay time | td(off) | - |
| Fall time | tf | - |
Table-6-----Gatechargecharacteristics2)
| Parameter | Value | Unit |
|---|---|---|
| VDS | 60 | V |
| RDS(on),max | 1.2 | mΩ |
| ID | 306 | A |
| Qoss | 122 | nC |
| QG(0V..10V) | 115 | nC |
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Table-7-----Reversediode
| Parameter | Value | Unit |
|---|---|---|
| VDS | 60 | V |
| RDS(on),max | 1.2 | mΩ |
| ID | 306 | A |
| Qoss | 122 | nC |
| Qg(0V..10V) | 115 | nC |
1) Defined by design. Not subject to production test
4-----Electricalcharacteristicsdiagrams
on-state-
resistance
Diagram-
9:-
Drain-source-
5-----Package-Outlines
| Parameter | Value | Unit |
|---|---|---|
| VDS | 60 | V |
| RDS(on),max | 1.2 | mΩ |
| ID | 306 | A |
| Qoss | 122 | nC |
| QG(0V..10V) | 115 | nC |
| Type / Ordering Code | Package | Marking | Related Links |
|---|---|---|---|
| BSC012N06NS | TSON-8-3 | 012N06N | - |
Figure-1-----Outline-TSON-8-3,dimensionsinmm/inches
Revision-History
BSC012N06NS
Revision:-2020-02-28,-Rev.-2.3
- Previous Revision
- Revision Date Subjects (major changes since last revision)
- 2.0 2018-03-08 Release of final version
- 2.1 2018-12-11 Rev. 2.0
- 2.2 2020-02-06 Update current rating
- 2.3 2020-02-28 Update footnotes
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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Publishedby Infineon-Technologies-AG 81726-München,-Germany ©-2020-Infineon-Technologies-AG All-Rights-Reserved.
Legal-Disclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics- ("Beschaffenheitsgarantie")-.
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Thermal Information
| Parameter | Symbol | Values |
|---|---|---|
| Min. | ||
| Thermal resistance, junction - case, bottom | RthJC | - |
| Thermal resistance, junction - case, top | RthJC | - |
| Device on PCB, 6 cm2 cooling area2) | RthJA | - |
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| BSC012N06NSATMA1 | Infineon Technologies | 8-PowerTDFN |
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