BSC012N06NSATMA1

MOSFET

The BSC012N06NSATMA1 is a mosfet from Infineon Technologies. View the full BSC012N06NSATMA1 datasheet below including key specifications.

Official BSC012N06NSATMA1 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Infineon Technologies

BSC012N06NSATMA1 Key Specifications

Parameter	Value
Continuous Drain Current	36A (Ta), 306A (Tc)
Drain-Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg)	143 nC @ 10 V
Input Capacitance (Ciss)	11000 pF @ 30 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	8-PowerTDFN
Packaging	MouseReel
Power Dissipation (Max)	214W (Tc)
Rds(on)	1.2mOhm @ 50A, 10V Ω
Standard Pack Qty	5000
Supplier Device Package	PG-TSON-8-3
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Threshold Voltage	3.3V @ 147µA

BSC012N06NSATMA1 Overview

Part: BSC012N06NS — Infineon Technologies

Type: N-channel Power MOSFET

Description: 60 V, 1.2 mΩ N-channel power MOSFET with 306 A continuous drain current, optimized for synchronous rectification.

Operating Conditions:

Drain-source breakdown voltage: 60 V
Gate-source voltage: -20 to 20 V
Operating and storage temperature: -55 to 175 °C
Continuous drain current: 306 A (VGS=10 V, TC=25 °C)

Absolute Maximum Ratings:

Max drain-source voltage: 60 V
Max continuous drain current: 306 A (VGS=10 V, TC=25 °C)
Max junction/storage temperature: 175 °C

Key Specs:

Drain-source breakdown voltage (V(BR)DSS): 60 V (VGS=0 V, ID=1 mA)
Drain-source on-state resistance (RDS(on)): 0.9 mΩ typ, 1.2 mΩ max (VGS=10 V, ID=50 A)
Gate threshold voltage (VGS(th)): 2.1 V min, 2.8 V typ, 3.3 V max (VDS=VGS, ID=147 μA)
Zero gate voltage drain current (IDSS): 0.5 μA typ, 1 μA max (VDS=60 V, VGS=0 V, Tj=25 °C)
Total gate charge (Qg): 115 nC typ, 143 nC max (VDD=30 V, ID=50 A, VGS=0 to 10 V)
Output capacitance (Coss): 1800 pF typ, 2400 pF max (VGS=0 V, VDS=30 V, f=1 MHz)
Reverse recovery time (trr): 41 ns typ, 82 ns max
Thermal resistance, junction - case, bottom (RthJC): 0.35 K/W typ, 0.7 K/W max

Features:

Optimized for synchronous rectification
100% avalanche tested
Superior thermal resistance
N-channel
175°C rated
Pb-free lead-plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Higher solder joint reliability due to enlarged source interconnection

Package:

TSON-8-3

BSC012N06NSATMA1 Features

·-Optimized-for-synchronous-rectification
·-100%-avalanche-tested
·-Superior-thermal-resistance
·-N-channel
·-175°C-rated
·-Pb-free-lead-plating;-RoHS-compliant
·-Halogen-free-according-to-IEC61249-2-21
·-Higher-solder-joint-reliability-due-to-enlarged-source-interconnection

BSC012N06NSATMA1 Thermal Information

		Values	Values	Values	Unit
Parameter	Symbol	Min.	Typ.	Max.
Thermal resistance, junction - case, bottom	R thJC	-	0.35	0.7	K/W
Thermal resistance, junction - case, top	R thJC	-	-	20	K/W
Device on PCB, 6 cm 2 cooling area 2)	R thJA	-	-	50	K/W

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
BSC012N06NS	Infineon Technologies	TSON-8
OPTIMOS5	Infineon Technologies	TSON-8

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All Discrete Semiconductors datasheets All Infineon Technologies datasheets (140)

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