BSC012N06NSATMA1
MOSFETThe BSC012N06NSATMA1 is a mosfet from Infineon Technologies. View the full BSC012N06NSATMA1 datasheet below including key specifications.
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 36A (Ta), 306A (Tc) |
| Drain-Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 143 nC @ 10 V |
| Input Capacitance (Ciss) | 11000 pF @ 30 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 214W (Tc) |
| Rds(on) | 1.2mOhm @ 50A, 10V Ω |
| Supplier Device Package | PG-TSON-8-3 |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 3.3V @ 147µA |
Overview
Part: BSC012N06NS — Infineon Technologies
Type: N-channel Power MOSFET
Description: 60 V, 1.2 mΩ N-channel power MOSFET with 306 A continuous drain current, optimized for synchronous rectification.
Operating Conditions:
- Drain-source breakdown voltage: 60 V
- Gate-source voltage: -20 to 20 V
- Operating and storage temperature: -55 to 175 °C
- Continuous drain current: 306 A (VGS=10 V, TC=25 °C)
Absolute Maximum Ratings:
- Max drain-source voltage: 60 V
- Max continuous drain current: 306 A (VGS=10 V, TC=25 °C)
- Max junction/storage temperature: 175 °C
Key Specs:
- Drain-source breakdown voltage (V(BR)DSS): 60 V (VGS=0 V, ID=1 mA)
- Drain-source on-state resistance (RDS(on)): 0.9 mΩ typ, 1.2 mΩ max (VGS=10 V, ID=50 A)
- Gate threshold voltage (VGS(th)): 2.1 V min, 2.8 V typ, 3.3 V max (VDS=VGS, ID=147 μA)
- Zero gate voltage drain current (IDSS): 0.5 μA typ, 1 μA max (VDS=60 V, VGS=0 V, Tj=25 °C)
- Total gate charge (Qg): 115 nC typ, 143 nC max (VDD=30 V, ID=50 A, VGS=0 to 10 V)
- Output capacitance (Coss): 1800 pF typ, 2400 pF max (VGS=0 V, VDS=30 V, f=1 MHz)
- Reverse recovery time (trr): 41 ns typ, 82 ns max
- Thermal resistance, junction - case, bottom (RthJC): 0.35 K/W typ, 0.7 K/W max
Features:
- Optimized for synchronous rectification
- 100% avalanche tested
- Superior thermal resistance
- N-channel
- 175°C rated
- Pb-free lead-plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- Higher solder joint reliability due to enlarged source interconnection
Package:
- TSON-8-3
Features
- ·-Optimized-for-synchronous-rectification
- ·-100%-avalanche-tested
- ·-Superior-thermal-resistance
- ·-N-channel
- ·-175°C-rated
- ·-Pb-free-lead-plating;-RoHS-compliant
- ·-Halogen-free-according-to-IEC61249-2-21
- ·-Higher-solder-joint-reliability-due-to-enlarged-source-interconnection
Thermal Information
| Values | Values | Values | Unit | ||
|---|---|---|---|---|---|
| Parameter | Symbol | Min. | Typ. | Max. | |
| Thermal resistance, junction - case, bottom | R thJC | - | 0.35 | 0.7 | K/W |
| Thermal resistance, junction - case, top | R thJC | - | - | 20 | K/W |
| Device on PCB, 6 cm 2 cooling area 2) | R thJA | - | - | 50 | K/W |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| BSC012N06NS | Infineon Technologies | — |
| OPTIMOS5 | Infineon Technologies | — |
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