Infineon Technologies Datasheets

140 Infineon Technologies datasheets read into specs, pinouts and ratings, including MOSFETs, Integrated Circuits and Microcontrollers (MCU).

Infineon Technologies datasheets, page 4

140 parts · page 4 of 5. Most used first, then by part number.

IRLML0030

Infineon Technologies

30V HEXFET N-channel power MOSFET in Micro3 (SOT-23) package with low RDS(on) (<29 mΩ at 4.5V VGS), intended for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML0040

Infineon Technologies

30V N-channel logic-level HEXFET power MOSFET in a Micro3 (SOT-23) package for load/system switch applications, with RDS(on) below 29 mOhm at VGS = 4.5V.

HEXFET-Power MOSFETSOT-23

IRLML0060

Infineon Technologies

30V logic-level N-channel HEXFET power MOSFET in SOT-23 with low RDS(on) (max 29 mΩ at 4.5V), intended for load/system switching

HEXFET-Power MOSFET

IRLML0100

Infineon Technologies

30V HEXFET N-channel power MOSFET in Micro3 (SOT-23) package with low RDS(on) (<29 mΩ at 4.5V) for load/system switch applications

HEXFET-Power MOSFET

IRLML2030

Infineon Technologies

30V N-channel HEXFET power MOSFET in Micro3 (SOT-23) package with low RDS(on) (<29 mOhm at 4.5V VGS), intended for load/system switch applications.

HEXFET-Power MOSFETSOT-23

IRLML2060

Infineon Technologies

30V N-channel HEXFET power MOSFET with low RDS(on) (<29 mΩ at VGS=4.5V) in an industry-standard SOT-23 package, intended for load/system switch applications

HEXFET-Power MOSFET

IRLML2244

Infineon Technologies

30V N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on) (<29 mOhm at 4.5V VGS) for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML2246

Infineon Technologies

30V N-channel HEXFET power MOSFET in SOT-23 with low RDS(on) for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML2402

Infineon Technologies

30V N-channel HEXFET power MOSFET in Micro3 (SOT-23) with low RDS(on) (<29 mOhm at 4.5V), intended for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML2502

Infineon Technologies

30V N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on) (<29 mΩ), intended for load/system switching.

HEXFET-Power MOSFET

IRLML2803TRPBF

Infineon Technologies

MOSFET N-CH 30V 1.2A SOT23

N-Channel Power MOSFETTO-236-3, SC-59, SOT-23-3

IRLML5103

Infineon Technologies

30V HEXFET N-channel power MOSFET in Micro3 (SOT-23) package with RDS(on) below 29 mΩ at 4.5V gate drive, intended for load/system switching

HEXFET-Power MOSFETSOT-23

IRLML5203

Infineon Technologies

30V N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on) of 29 mΩ max at 4.5V gate drive, intended for load/system switching

HEXFET-Power MOSFETSOT-23

IRLML6244

Infineon Technologies

30V N-channel HEXFET power MOSFET in SOT-23 (Micro3) with low RDS(on) (<29 mΩ at 4.5V gate drive), intended for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML6246

Infineon Technologies

30V N-channel HEXFET power MOSFET with low on-resistance (<29 mΩ at 4.5V gate drive) in a SOT-23 package, intended for load/system switch applications.

HEXFET-Power MOSFETSOT-23

IRLML6302

Infineon Technologies

30V logic-level N-channel HEXFET power MOSFET in SOT-23 with 29 mOhm max RDS(on) at 4.5V, for load/system switching

HEXFET-Power MOSFET

IRLML6344

Infineon Technologies

30V N-Channel HEXFET Power MOSFET for load/system switch applications, featuring low on-resistance.

HEXFET-Power MOSFETSOT-23

IRLML6344TRPBF

Infineon Technologies

MOSFET N-CH 30V 5A MICRO3/SOT23

HEXFET-Power MOSFETTO-236-3, SC-59, SOT-23-3

IRLML6346

Infineon Technologies

30V N-channel HEXFET power MOSFET with low on-resistance (<29 mΩ at 4.5V VGS) in a Micro3 (SOT-23) package for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML6401

Infineon Technologies

30V N-channel HEXFET power MOSFET in SOT-23 with 29 mΩ max RDS(on) at 4.5V VGS, intended for load/system switching.

HEXFET-Power MOSFET

IRLML6402

Infineon Technologies

30V N-channel HEXFET power MOSFET with low RDS(on) (<29 mΩ at 4.5V) in a SOT-23 package, intended for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML6402TRPBF

Infineon Technologies

MOSFET P-CH 20V 3.7A SOT23

P-Channel Power MOSFETTO-236-3, SC-59, SOT-23-3

IRLML9301

Infineon Technologies

30V N-channel HEXFET power MOSFET with low RDS(on) (<29 mΩ at 4.5V) in a Micro3 (SOT-23) package, intended for load/system switch applications.

HEXFET-Power MOSFETSOT-23

IRLML9303

Infineon Technologies

30V N-channel logic-level HEXFET power MOSFET in SOT-23 with low RDS(on) (<29 mΩ) for load/system switch applications

HEXFET-Power MOSFET

IRLZ44N

Infineon Technologies

Logic-Level Gate Drive HEXFET Power MOSFET with advanced process technology, dynamic dv/dt rating, 175°C operating temperature, fast switching, and fully avalanche rated.

N-Channel MOSFETTO-220AB

IRLZ44NPBF

Infineon Technologies

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.022 Ohm; Id 47A; TO-220AB; Pd 110W; Vgs +/-16V

N-Channel HEXFET Power MOSFETTO-220-3

IRS2005

Infineon Technologies

200V high-speed half-bridge gate driver for power MOSFETs and IGBTs with independent high- and low-side outputs, matched propagation delays and VCC/VBS undervoltage lockout.

High and Low Side MOSFET/IGBT Driver

IRS2005MPBF

Infineon Technologies

200V high and low side driver for power MOSFETs and IGBTs with independent in-phase output channels, 3.3V logic compatibility, undervoltage lockout and matched propagation delays

High and Low Side Gate DriverMLPQ-14 4x4mm

IRS2005SPBF

Infineon Technologies

High-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels for use up to 200V.

Gate Driver8-Lead SOIC

IRS2005STRPBF

Infineon Technologies

MOSFET Driver, High & Low Side, 10 V to 20 V supply, 0.6 A out, 160 ns /150 ns on/off, SOIC-8

High and Low Side Gate Driver8-SOIC (0.154", 3.90mm Width)