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IRS2005

High and Low Side MOSFET/IGBT Driver

The IRS2005 is a high and low side mosfet/igbt driver from Infineon Technologies. View the full IRS2005 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official IRS2005 datasheet (PDF) — the source this page was extracted from.

Category

High and Low Side MOSFET/IGBT Driver

IRS2005 Key Specifications

ParameterValue
Package Options8-Lead SOIC, 14-Lead MLPQ 4x4
Delay Matching (Max.)50ns
Offset Voltage (VOFFSET)≤ 200V
Turn-On Rise Time (Typ.)70ns
Logic Input Compatibility3.3V, 5V, 15V
Turn-Off Fall Time (Typ.)30ns
Gate Drive Supply (VCC/VBS)10V to 20V
Operating Temperature Range-40°C to 125°C
Quiescent VBS Current (Typ.)45µA
Quiescent VCC Current (Typ.)300µA
Logic '0' Input Voltage (Max.)0.8V
Logic '1' Input Voltage (Min.)2.5V
Output Sink Current (Io-, Typ.)600mA
Turn-On Propagation Delay (Typ.)160ns
Output Source Current (Io+, Typ.)290mA
Turn-Off Propagation Delay (Typ.)150ns
UV Threshold VCC/VBS Negative-Going (Typ.)8.2V
UV Threshold VCC/VBS Positive-Going (Typ.)8.9V

IRS2005 Overview

Part: IRS2005STRPBF — International Rectifier

Type: High and Low Side Gate Driver

Description: 200 V high-speed half-bridge gate driver IC with 290 mA source and 600 mA sink capability for driving N-channel MOSFETs and IGBTs.

Operating Conditions:

  • Supply voltage: 10 to 20 V
  • Operating temperature: -40 to 125 °C
  • High-side floating well supply offset voltage: COM - 8 V to 200 V

Absolute Maximum Ratings:

  • Max supply voltage: 25 V
  • Max junction/storage temperature: 150 °C

Key Specs:

  • High-side floating offset voltage (V_OFFSET): ≤ 200 V
  • Output driver pulsed source current (I_o+): 290 mA typ., 200 mA min. (VO = 0 V, VIN = 0 V, PW ≤ 10 μs)
  • Output driver pulsed sink current (I_o-): 600 mA typ., 420 mA min. (VO = 15 V, VIN = 5 V, PW ≤ 10 μs)
  • Turn-on propagation delay (t_ON): 160 ns typ., 220 ns max. (VS = 0 V or 200 V)
  • Turn-off propagation delay (t_OFF): 150 ns typ., 220 ns max. (VS = 0 V or 200 V)
  • Turn-on rise time (t_R): 70 ns typ., 170 ns max. (CL = 1000 pF)
  • Turn-off fall time (t_F): 30 ns typ., 90 ns max. (CL = 1000 pF)
  • Delay matching time: 50 ns max.
  • VCC/VBS undervoltage positive going threshold: 8.9 V typ. (8.0 V min., 9.8 V max.)
  • Logic '1' input voltage (V_IH): 2.5 V min.
  • Logic '0' input voltage (V_IL): 0.8 V max.

Features:

  • Gate drive supplies up to 20 V per channel
  • Undervoltage lockout for VCC and VBS
  • 3.3 V, 5 V, and 15 V input logic compatible
  • Tolerant to negative transient voltage
  • Matched propagation delays
  • Output in phase with inputs
  • Designed for use with bootstrap power supplies
  • RoHS compliant

Applications:

  • Appliance motor drives
  • Servo drives
  • Micro inverter drives
  • General purpose three-phase inverters

Package:

  • 8-Lead SOIC
  • 14-Lead MLPQ 4x4

IRS2005 Features

  • Gate drive supplies up to 20V per channel
  • Undervoltage lockout for VCC, VBS
  • 3.3 V, 5V , 15V input logic compatible
  • Tolerant to negative transient voltage
  • Designed for use with bootstrap power supplies
  • Matched propagation delays
  • Output in phase with the Inputs
  • -40°C to 125°C operating range
  • RoHS compliant

IRS2005 Applications

  • Appliance motor drives
  • Servo drives
  • Micro inverter drives
  • General purpose three phase inverters
Standard PackStandard PackOrderable Part Number
Base Part NumberPackage TypeFormQuantity
IRS2005SPBF8-Lead SOICTube/Bulk95IRS2005SPBF
IRS2005SPBF8-Lead SOICTape and Reel2500IRS2005STRPBF
IRS2005MPBF14-Lead MLPQ 4x4Tape and Reel3000IRS2005MTRPBF

IRS2005 Electrical Characteristics

(VCC - COM) = (VB - VS) = 15V. TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to COM. The VO and IO parameters are referenced to respective VS and COM and are applicable to the respective output leads HO or LO. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS.

SymbolDefinitionMin.Typ.Max.UnitsTest Conditions
V BSUV+V BS supply undervoltage positive going threshold8.08.99.8V
V BSUV-V BS supply undervoltage negative going threshold7.48.29V
V BSUVHYV BS supply undervoltage hysteresis-0.7-V
V CCUV+V CC supply undervoltage positive going threshold8.08.99.8V
V CCUV-V CC supply undervoltage negative going threshold7.48.29V
V CCUVHYV CC supply undervoltage hysteresis-0.7-V
I LKHigh-side floating well offset supply leakage--50μAV B = V S = 200V
I QBSQuiescent V BS supply current-4575μAAll inputs are in the off state
I QCCQuiescent V CC supply current-300520μAAll inputs are in the off state
V OHHigh level output voltage drop, V BIAS -V O-0.050.2VI O = 2 mA
V OLLow level output voltage drop, V O-0.020.1VI O = 2 mA
I o+Output high short circuit pulsed current200290-mAV O = 0V, V IN = 0V PW ≤ 10μs
I o-Output low short circuit pulsed current420600-mAV O = 15V, V IN = 5V PW ≤ 10μs
V IHLogic '1' input voltage2.5--V
V ILLogic '0' input voltage--0.8V
I IN+Input bias current (HO = High)-310μAV IN = 5V
I IN-Input bias current (HO = Low)--5μAV IN = 0V

IRS2005 Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

SymbolDefinitionMin.Max.Units
V CCLow side supply voltage-0.325 †V
V INLogic input voltageCOM - 0.3V CC + 0.3V
V BHigh-side floating well supply voltage-0.3225V
V SHigh-side floating well supply return voltageV B - 25V B + 0.3V
V HOFloating gate drive output voltageV S - 0.3V B + 0.3V
V LOLow-side output voltageCOM - 0.3V CC + 0.3V
COMPower groundV CC - 25V CC + 0.3V
dV S /dtAllowable V S offset supply transient relative-50V/ns
P DPackage power dissipation @TA +25°C 8-Lead-0.625W
P D14-Lead-2.08W
Rth JAThermal resistance, junction to ambient 8-Lead-200°C/W
Rth JA14-Lead-36°C/W
T JJunction temperature-150°C
T SStorage temperatureStorage temperature-55 150°C
T LLead temperature (soldering, 10 seconds)-300°C

For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table. The offset rating is tested with supplies of (VCC - COM) = (VB - VS) = 15V.

SymbolDefinitionMinMaxUnits
V CCLow-side supply voltage1020V
V INLogic input voltage0V CC
V BHigh-side floating well supply voltageV S + 10V S + 20
V SHigh-side floating well supply offset voltage †COM - 8 †200
V HOFloating gate drive output voltageV sV B
V LOLow-side output voltageCOMV CC
T AAmbient temperature-40125°C

IRS2005 Typical Application

  • Appliance motor drives
  • Servo drives
  • Micro inverter drives
  • General purpose three phase inverters
Standard PackStandard PackOrderable Part Number
Base Part NumberPackage TypeFormQuantity
IRS2005SPBF8-Lead SOICTube/Bulk95IRS2005SPBF
IRS2005SPBF8-Lead SOICTape and Reel2500IRS2005STRPBF
IRS2005MPBF14-Lead MLPQ 4x4Tape and Reel3000IRS2005MTRPBF

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
IRS2005MPBFInfineon TechnologiesMLPQ-14 4x4mm
IRS2005SPBFInfineon Technologies8-Lead SOIC
IRS2005STRPBFInfineon Technologies8-SOIC (0.154", 3.90mm Width)

More datasheets

All Infineon Technologies datasheets (140)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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