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IRS2005STRPBF

The IRS2005STRPBF is an electronic component from Infineon. View the full IRS2005STRPBF datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.

Manufacturer

Infineon

Category

Gate Drivers

Package

8-SOIC (0.154", 3.90mm Width)

Lifecycle

Active

Key Specifications

ParameterValue
Ambient Temperature Range High125 °C
Case/PackageSOP
Channel TypeIndependent
Channel TypeIndependent
Current - Peak Output (Source, Sink)290mA, 600mA
Current - Peak Output (Source, Sink)290mA, 600mA
DigiKey ProgrammableNot Verified
DigiKey ProgrammableNot Verified
Driven ConfigurationHalf-Bridge
Driven ConfigurationHalf-Bridge
Fall Time30 ns
Gate TypeIGBT, MOSFET (N-Channel)
Gate TypeIGBT, MOSFET (N-Channel)
Height1.72 mm
Height - Seated (Max)1.75 mm
High Side Voltage - Max (Bootstrap)200 V
High Side Voltage - Max (Bootstrap)200 V
Input TypeNon-Inverting
Length4.9 mm
Lifecycle StatusProduction (Last Updated: 7 months ago)
Logic Voltage - VIL, VIH0.8V, 2.5V
Logic Voltage - VIL, VIH0.8V, 2.5V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature125 °C
Max Output Current600 mA
Max Power Dissipation625 mW
Max Supply Voltage20 V
Min Operating Temperature-40 °C
Min Supply Voltage10 V
Mounting TypeSurface Mount
Nominal Supply Current300 µA
Nominal Supply Voltage (DC)15 V
Number of Channels2
Number of Circuits1
Number of Drivers2
Number of Drivers2
Number of Drivers2
Number of Outputs2
Number of Terminals8
Operating Temperature-40°C ~ 150°C (TJ)
Package / Case8-SOIC (0.154", 3.90mm Width)
Package Quantity2500
PackagingMouseReel
PackagingTape & Reel
REACH SVHCYes
Rise / Fall Time (Typ)70ns, 30ns
Rise / Fall Time (Typ)70ns, 30ns
Rise Time70 ns
RoHSCompliant
Schedule B8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000
Standard Pack Qty2500
Supplier Device Package8-SOIC
Supplier Device Package8-SOIC
Terminal Pitch1.27 mm
Turn-Off Delay Time150 ns
Turn-On Delay Time160 ns
Supply Voltage10V ~ 20V
Width3.9 mm

Overview

The IRS2005 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC's use in high frequency applications.

Features

  • Gate drive supplies up to 20V per channel
  • Undervoltage lockout for VCC, VBS
  • 3.3 V, 5V , 15V input logic compatible
  • Tolerant to negative transient voltage
  • Designed for use with bootstrap power supplies
  • Matched propagation delays
  • Output in phase with the Inputs
  • -40°C to 125°C operating range
  • RoHS compliant

Applications

  • Appliance motor drives
  • Servo drives
  • Micro inverter drives
  • General purpose three phase inverters
Standard PackStandard PackOrderable Part Number
Base Part NumberPackage TypeFormQuantity
IRS2005SPBF8-Lead SOICTube/Bulk95IRS2005SPBF
IRS2005SPBF8-Lead SOICTape and Reel2500IRS2005STRPBF
IRS2005MPBF14-Lead MLPQ 4x4Tape and Reel3000IRS2005MTRPBF

Pin Configuration

PinNameTypeDescription
1HIN-Logic inputs for high-side gate driver output (HO), in phase
2VB-High-side gate drive floating supply
3VS-High voltage floating supply return
4HO-High-side driver output
5LO-Low-side driver output
6LIN-Logic inputs for low-side gate driver output (LO), in phase
7COM-Low-side gate drive return
8VCC-Low-side and logic supply voltage

Electrical Characteristics

(VCC - COM) = (VB - VS) = 15V. TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to COM. The VO and IO parameters are referenced to respective VS and COM and are applicable to the respective output leads HO or LO. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS.

SymbolDefinitionMin.Typ.Max.UnitsTest Conditions
V BSUV+V BS supply undervoltage positive going threshold8.08.99.8V
V BSUV-V BS supply undervoltage negative going threshold7.48.29V
V BSUVHYV BS supply undervoltage hysteresis-0.7-V
V CCUV+V CC supply undervoltage positive going threshold8.08.99.8V
V CCUV-V CC supply undervoltage negative going threshold7.48.29V
V CCUVHYV CC supply undervoltage hysteresis-0.7-V
I LKHigh-side floating well offset supply leakage--50μAV B = V S = 200V
I QBSQuiescent V BS supply current-4575μAAll inputs are in the off state
I QCCQuiescent V CC supply current-300520μAAll inputs are in the off state
V OHHigh level output voltage drop, V BIAS -V O-0.050.2VI O = 2 mA
V OLLow level output voltage drop, V O-0.020.1VI O = 2 mA
I o+Output high short circuit pulsed current200290-mAV O = 0V, V IN = 0V PW ≤ 10μs
I o-Output low short circuit pulsed current420600-mAV O = 15V, V IN = 5V PW ≤ 10μs
V IHLogic '1' input voltage2.5--V
V ILLogic '0' input voltage--0.8V
I IN+Input bias current (HO = High)-310μAV IN = 5V
I IN-Input bias current (HO = Low)--5μAV IN = 0V

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

SymbolDefinitionMin.Max.Units
V CCLow side supply voltage-0.325 †V
V INLogic input voltageCOM - 0.3V CC + 0.3V
V BHigh-side floating well supply voltage-0.3225V
V SHigh-side floating well supply return voltageV B - 25V B + 0.3V
V HOFloating gate drive output voltageV S - 0.3V B + 0.3V
V LOLow-side output voltageCOM - 0.3V CC + 0.3V
COMPower groundV CC - 25V CC + 0.3V
dV S /dtAllowable V S offset supply transient relative-50V/ns
P DPackage power dissipation @TA +25°C 8-Lead-0.625W
P D14-Lead-2.08W
Rth JAThermal resistance, junction to ambient 8-Lead-200°C/W
Rth JA14-Lead-36°C/W
T JJunction temperature-150°C
T SStorage temperatureStorage temperature-55 150°C
T LLead temperature (soldering, 10 seconds)-300°C

Recommended Operating Conditions

For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table. The offset rating is tested with supplies of (VCC - COM) = (VB - VS) = 15V.

SymbolDefinitionMinMaxUnits
V CCLow-side supply voltage1020V
V INLogic input voltage0V CC
V BHigh-side floating well supply voltageV S + 10V S + 20
V SHigh-side floating well supply offset voltage †COM - 8 †200
V HOFloating gate drive output voltageV sV B
V LOLow-side output voltageCOMV CC
T AAmbient temperature-40125°C

Typical Application

  • Appliance motor drives
  • Servo drives
  • Micro inverter drives
  • General purpose three phase inverters
Standard PackStandard PackOrderable Part Number
Base Part NumberPackage TypeFormQuantity
IRS2005SPBF8-Lead SOICTube/Bulk95IRS2005SPBF
IRS2005SPBF8-Lead SOICTape and Reel2500IRS2005STRPBF
IRS2005MPBF14-Lead MLPQ 4x4Tape and Reel3000IRS2005MTRPBF

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
IRS2005Infineon Technologies—
IRS2005MPBFInfineon Technologies—
IRS2005SPBFInfineon Technologies—
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