IRS2005MPBF

The IRS2005MPBF is an electronic component from Infineon Technologies. View the full IRS2005MPBF datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Infineon Technologies

Overview

The IRS2005 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC's use in high frequency applications.

Features

Gate drive supplies up to 20V per channel
Undervoltage lockout for VCC, VBS
3.3 V, 5V , 15V input logic compatible
Tolerant to negative transient voltage
Designed for use with bootstrap power supplies
Matched propagation delays
Output in phase with the Inputs
-40°C to 125°C operating range
RoHS compliant

Applications

Appliance motor drives
Servo drives
Micro inverter drives
General purpose three phase inverters

		Standard Pack	Standard Pack	Orderable Part Number
Base Part Number	Package Type	Form	Quantity
IRS2005SPBF	8-Lead SOIC	Tube/Bulk	95	IRS2005SPBF
IRS2005SPBF	8-Lead SOIC	Tape and Reel	2500	IRS2005STRPBF
IRS2005MPBF	14-Lead MLPQ 4x4	Tape and Reel	3000	IRS2005MTRPBF

Electrical Characteristics

(VCC - COM) = (VB - VS) = 15V. TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to COM. The VO and IO parameters are referenced to respective VS and COM and are applicable to the respective output leads HO or LO. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS.

Symbol	Definition	Min.	Typ.	Max.	Units	Test Conditions
V BSUV+	V BS supply undervoltage positive going threshold	8.0	8.9	9.8	V
V BSUV-	V BS supply undervoltage negative going threshold	7.4	8.2	9	V
V BSUVHY	V BS supply undervoltage hysteresis	-	0.7	-	V
V CCUV+	V CC supply undervoltage positive going threshold	8.0	8.9	9.8	V
V CCUV-	V CC supply undervoltage negative going threshold	7.4	8.2	9	V
V CCUVHY	V CC supply undervoltage hysteresis	-	0.7	-	V
I LK	High-side floating well offset supply leakage	-	-	50	μA	V B = V S = 200V
I QBS	Quiescent V BS supply current	-	45	75	μA	All inputs are in the off state
I QCC	Quiescent V CC supply current	-	300	520	μA	All inputs are in the off state
V OH	High level output voltage drop, V BIAS -V O	-	0.05	0.2	V	I O = 2 mA
V OL	Low level output voltage drop, V O	-	0.02	0.1	V	I O = 2 mA
I o+	Output high short circuit pulsed current	200	290	-	mA	V O = 0V, V IN = 0V PW ≤ 10μs
I o-	Output low short circuit pulsed current	420	600	-	mA	V O = 15V, V IN = 5V PW ≤ 10μs
V IH	Logic '1' input voltage	2.5	-	-	V
V IL	Logic '0' input voltage	-	-	0.8	V
I IN+	Input bias current (HO = High)	-	3	10	μA	V IN = 5V
I IN-	Input bias current (HO = Low)	-	-	5	μA	V IN = 0V

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Symbol	Definition	Min.	Max.	Units
V CC	Low side supply voltage	-0.3	25 †	V
V IN	Logic input voltage	COM - 0.3	V CC + 0.3	V
V B	High-side floating well supply voltage	-0.3	225	V
V S	High-side floating well supply return voltage	V B - 25	V B + 0.3	V
V HO	Floating gate drive output voltage	V S - 0.3	V B + 0.3	V
V LO	Low-side output voltage	COM - 0.3	V CC + 0.3	V
COM	Power ground	V CC - 25	V CC + 0.3	V
dV S /dt	Allowable V S offset supply transient relative	-	50	V/ns
P D	Package power dissipation @TA +25°C 8-Lead	-	0.625	W
P D	14-Lead	-	2.08	W
Rth JA	Thermal resistance, junction to ambient 8-Lead	-	200	°C/W
Rth JA	14-Lead	-	36	°C/W
T J	Junction temperature	-	150	°C
T S	Storage temperature	Storage temperature	-55 150	°C
T L	Lead temperature (soldering, 10 seconds)	-	300	°C

Recommended Operating Conditions

For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table. The offset rating is tested with supplies of (VCC - COM) = (VB - VS) = 15V.

Symbol	Definition	Min	Max	Units
V CC	Low-side supply voltage	10	20	V
V IN	Logic input voltage	0	V CC
V B	High-side floating well supply voltage	V S + 10	V S + 20
V S	High-side floating well supply offset voltage †	COM - 8 †	200
V HO	Floating gate drive output voltage	V s	V B
V LO	Low-side output voltage	COM	V CC
T A	Ambient temperature	-40	125	°C

Typical Application

Appliance motor drives
Servo drives
Micro inverter drives
General purpose three phase inverters

		Standard Pack	Standard Pack	Orderable Part Number
Base Part Number	Package Type	Form	Quantity
IRS2005SPBF	8-Lead SOIC	Tube/Bulk	95	IRS2005SPBF
IRS2005SPBF	8-Lead SOIC	Tape and Reel	2500	IRS2005STRPBF
IRS2005MPBF	14-Lead MLPQ 4x4	Tape and Reel	3000	IRS2005MTRPBF

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
IRS2005	Infineon Technologies	—
IRS2005SPBF	Infineon Technologies	—
IRS2005STRPBF	Infineon	8-SOIC (0.154", 3.90mm Width)

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