Discrete Semiconductors Datasheets
Explore 138 discrete semiconductors with extracted datasheets, electrical characteristics, pinout diagrams, and specifications.
138 parts — page 5 of 5
SS8550
onsemi
-55℃~+150℃ 1 PNP 1.5A 100MHz 100nA 120 25V 300mW 500mV 5V PNP SOT-23 Bipolar (BJT) ROHS
SSM3J332R
UMW
MOSFET P-CH 30V 6A SOT23F
SSM3J332R,LF
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 6A SOT23F
SSM3J338R
Toshiba
1W(Ta) 10V 1V@1mA 19.5nC@ 4.5 V 1P 12V 17.6m¦¸@ 6A, 8V 6A 1.4nF@6V SOT-23F 2.9mm*1.8mm*800¦Ìm
SSM3J338R,LF
Toshiba
1W(Ta) 10V 1V@1mA 19.5nC@ 4.5 V 1P 12V 17.6m¦¸@ 6A, 8V 6A 1.4nF@6V SOT-23F 2.9mm*1.8mm*800¦Ìm
SSM3K333R,LF(T
Toshiba
N-Channel 30V 6A 2.5V @ 100uA 28mΩ @ 5A, 10V 1W SOT-23F MOSFET RoHS
STL6P3LLH6-MS
STMicroelectronics
P-channel Power MOSFET developed using STripFET H6 technology, featuring very low on-resistance and high avalanche ruggedness, suitable for switching applications.
STPS5L25
STMicroelectronics
STPS5L25B-TR
STMicroelectronics
DIODE SCHOTTKY 25V 5A DPAK
SURA8120T3G
ON Semiconductor
Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.
SZ5520
EIC Semiconductor
Zener Diode Single 20V 5% 7Ohm 3000mW 2-Pin SMA
TIP41C
STMicroelectronics
The TIP41C is a base island technology NPN power transistor in TO-220 plastic package suitable for audio, power linear and switching applications.
TLP293
Toshiba
Photocoupler consisting of InGaAs infrared emitting diodes optically coupled to phototransistors, housed in a very small and thin SO16 package, suitable for high-density surface mount applications with wide operating temperature range and high isolation voltage.
ULN2001A
STMicroelectronics
IC PWR RELAY 7NPN 1:1 16DIP
ULN2001D
UMW
TRANS 3NPN DARL 50V 500MA 8-SOP
ULN2003
Texas Instruments
ULN2003ADR
Texas Instruments
IC PWR RELAY 7NPN 1:1 16SOIC
USBLC6-2SC6
STMicroelectronics
ESD Protection Diodes / TVS Diodes ESD Protection Low Cap