TLP293
Photocoupler (InGaAs IRED & Photo-Transistor)The TLP293 is a photocoupler (ingaas ired & photo-transistor) from Toshiba. View the full TLP293 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Key Specifications
| Parameter | Value |
|---|---|
| Weight | 0.19 g (typ) |
| Clearance | 5.0 mm (min) |
| Fall Time | 3 μs (typ) |
| Rise Time | 2 μs (typ) |
| Collector Current | 50 mA (max) |
| Creepage Distance | 5.0 mm (min) |
| Isolation Voltage | 3750 Vrms (min) |
| Input Forward Voltage | 1.1 V to 1.4 V |
| Input Reverse Voltage | 5 V (max) |
| Current Transfer Ratio | 50% (min) |
| Collector-Emitter Voltage | 80 V (min) |
| Operating Temperature Range | -55 to 125 °C |
Overview
Part: TLP293-4 — TOSHIBA Type: Photocoupler Description: A 4-channel photocoupler consisting of InGaAs infrared emitting diodes optically coupled to phototransistors, housed in a thin SO16 package, offering 3750 Vrms isolation and a wide operating temperature range of -55 to 125 °C.
Operating Conditions:
- Operating temperature: -55 to 125 °C
- Input forward current: 5 mA (for CTR test)
- Collector-emitter voltage: 5 V (for CTR test)
Absolute Maximum Ratings:
- Max input forward current: 50 mA
- Max collector current: 50 mA
- Max collector-emitter voltage: 80 V
- Max isolation voltage: 3750 Vrms
- Max junction temperature: 125 °C
- Max operating temperature: 125 °C
- Max storage temperature: 125 °C
Key Specs:
- Collector-Emitter Breakdown Voltage V(BR)CEO: 80 V (min) at IC = 0.5 mA
- Current Transfer Ratio (CTR): 50% (min) at IF = 5 mA, VCE = 5 V
- Input Forward Voltage VF: 1.25 V (typ) at IF = 10 mA
- Dark Current IDARK: 0.01 μA (typ) at VCE = 48 V
- Isolation Resistance RS: 1×10^12 Ω (min) at VS = 500 V, R.H. ≤ 60%
- Rise Time tr: 2 μs (typ) at VCC = 10 V, IC = 2 mA, RL = 100 Ω
- Fall Time tf: 3 μs (typ) at VCC = 10 V, IC = 2 mA, RL = 100 Ω
- Turn-on Time ton: 3 μs (typ) at VCC = 10 V, IC = 2 mA, RL = 100 Ω
Features:
- InGaAs IRED & Photo-Transistor
- Very small and thin SO16 package
- Wide operating temperature range (-55 to 125 °C)
- High isolation voltage (3750 Vrms)
- UL, cUL, CQC, VDE approved safety standards
Applications:
- Programmable Controllers
- Switching Power Supplies
- Simplex/Multiplex Data Transmissions
- High-density surface mount applications
Package:
- SO16 (Weight: 0.19 g typ.)
Pin Configuration
1,3,5,7
: Anode
2,4,6,8 :
Cathode
9,11,13,15 :
Emitter
10,12,14,16 :
Collector
Start of commercial production 2014-04
Electrical Characteristics
| CHARACTERISTIC | CHARACTERISTIC | SYMBOL | TEST CONDITION | MIN | TYP. | MAX | UNIT |
|---|---|---|---|---|---|---|---|
| Input forward voltage | VF | I F = 10 mA | 1.1 | 1.25 | 1.4 | V | |
| Input reverse current | I R | VR = 5 V | - | - | 10 | μ A | |
| Input capacitance | CT | V = 0 V, f = 1 MHz | - | 30 | - | pF | |
| Collector-emitter breakdown voltage | V(BR) CEO | I C = 0.5 mA | 80 | - | - | V | |
| Emitter-collector breakdown voltage | V(BR) ECO | I E = 0.1 mA | 7 | - | - | V | |
| Dark current | I DARK | VCE = 48 V, | - | 0.01 | 0.08 | μ A | |
| I DARK | VCE = 48 V, Ta = 85°C | - | 2 | 50 | μ A | ||
| Collector-emitter capacitance | CCE | V = 0 V, f = 1 MHz | - | 10 | - | pF |
Absolute Maximum Ratings
| Characteristic | Characteristic | Symbol | Note | Rating | Unit |
|---|---|---|---|---|---|
| Input forward current | I F | 50 | mA | ||
| Input forward current derating (Ta ≥ 50°C) | ∆ I F / ∆ Ta | - 0.59 | mA /°C | ||
| Input forward current(Pulsed) | I FP | (Note 1) | 1 | A | |
| Power dissipation | PD | 70 | mW | ||
| Power dissipation derating(Ta ≥ 50°C) | ∆ PD / ∆ Ta | -0.82 | mW /°C | ||
| Input reverse voltage | VR | 5 | V | ||
| Junction temperature | T j | 125 | °C | ||
| Collector-emitter voltage | VCEO | 80 | V | ||
| Emitter-collector voltage | VECO | 7 | V | ||
| Collector current | I C | 50 | mA | ||
| Collector power dissipation (1 Circuit) | PC | 100 | mW | ||
| Collector power dissipation derating(Ta ≥ 25°C) (1 Circuit) | ∆ PC / ∆ Ta | - 0.91 | mW /°C | ||
| Junction temperature | T j | 125 | °C | ||
| Operating temperature range | T opr | - 55 to 125 | °C | ||
| Storage temperature range | T stg | - 55 to 125 | °C | ||
| Lead soldering temperature | T sol | 260 (10s) | °C | ||
| Total power dissipation (1 Circuit) | PT | 170 | mW | ||
| Input power dissipation derating(Ta ≥ 25°C) (1 Circuit) | ∆ PT / ∆ Ta | - 1.55 | mW /°C | ||
| Isolation Voltage AC, 60s, R.H. ≤ 60% | BVS | (Note 2) | 3750 | Vrms |
Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ('Handling Precautions'/'Derating Concept and Methods') and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note1 : Pulse width ≤ 100 μ s, frequency 100 Hz
Note2 : This device is considered as a two-terminal device : All pins on the LED side are shorted together, and all pin on the photodetector side are shorted together.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| TLP293-4 | Toshiba | — |
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