TLP293

TLP293-4

Manufacturer

Toshiba

Overview

Part 1: Markdown Summary

Part: TLP293-4, Toshiba

Type: Photocoupler (InGaAs IRED & Photo-Transistor)

Key Specs:

  • Collector-Emitter Voltage: 80 V (min)
  • Current Transfer Ratio: 50% (min)
  • Isolation Voltage: 3750 Vrms (min)
  • Operating Temperature Range: -55 to 125 °C
  • Creepage Distance: 5.0 mm (min)
  • Clearance: 5.0 mm (min)
  • Weight: 0.19 g (typ.)

Features:

  • Consists of phototransistors optically coupled to InGaAs infrared emitting diodes
  • Housed in SO16 package
  • Guaranteed wide operating temperature range
  • High isolation voltage
  • Suitable for high-density surface mount applications
  • UL-approved: UL1577, File No. E67349
  • cUL-approved: CSA Component Acceptance Service No.5A, File No. E67349
  • CQC-approved: GB4943.1, GB8898
  • VDE-approved: EN60747-5-5 (Option V4)

Applications:

  • Programmable Controllers
  • Switching Power Supplies
  • Simplex/Multiplex Data Transmissions

Package:

  • SO16: very small and thin (no dimensions specified)

Pin Configuration

TLP293-4

1,3,5,7 : Anode 2,4,6,8 : Cathode 9,11,13,15 : Emitter 10,12,14,16 : Collector

Start of commercial production 2014-04

Electrical Characteristics

CHARACTERISTICSYMBOLTEST CONDITIONMINTYP.MAXUNIT
Input forward voltageVFIF = 10 mA1.11.251.4V
LEDInput reverse currentIRVR = 5 V10μA
Input capacitanceCTV = 0 V, f = 1 MHz30pF
Collector-emitter breakdown voltageV(BR) CEOIC = 0.5 mA80V
Emitter-collector breakdown voltageV(BR) ECOIE = 0.1 mA7V
DETECTORVCE = 48 V,0.010.08μA
Dark currentIDARKVCE = 48 V, Ta = 85°C250μA
Collector-emitter capacitanceCCEV = 0 V, f = 1 MHz10pF

Absolute Maximum Ratings

CharacteristicNoteRatingUnit
Input forward currentIF50mA
Input forward current derating (Ta≥50°C)∆IF /∆Ta-0.59mA /°C
Input forward current(Pulsed)IFP(Note 1)1A
LEDPower dissipationPD70mW
Power dissipation derating(Ta≥50°C)∆PD /∆Ta-0.82mW /°C
Input reverse voltageVR5V
Junction temperatureTj125°C
Collector-emitter voltageVCEO80V
Emitter-collector voltageVECO7V
Collector currentIC50mA
DETECTORCollector power dissipation
(1 Circuit)
PC100mW
Collector power dissipation derating(Ta≥25°C)
(1 Circuit)
∆PC /∆Ta-0.91mW /°C
Junction temperatureTj125°C
Operating temperature rangeTopr-55 to 125°C
Storage temperature rangeTstg-55 to 125°C
Lead soldering temperatureTsol260 (10s)°C
COMMON
Total power dissipation (1 Circuit)
170mW
Input power dissipation derating(Ta≥25°C) (1 Circuit)-1.55mW /°C
Isolation Voltage
AC, 60s, R.H.≤60%
BVS(Note 2)3750Vrms

Note**:** Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note1**:** Pulse width ≤ 100 μs, frequency 100 Hz

Note2**:** This device is considered as a two-terminal device**:** All pins on the LED side are shorted together, and all pin on the photodetector side are shorted together.

Electrical Characteristics (Unless otherwise specified, Ta = 25°C)

CHARACTERISTICSYMBOLTEST CONDITIONMINTYP.MAXUNIT
Input forward voltageVFIF = 10 mA1.11.251.4V
LEDInput reverse currentIRVR = 5 V10μA
Input capacitanceCTV = 0 V, f = 1 MHz30pF
Collector-emitter breakdown voltageV(BR) CEOIC = 0.5 mA80V
Emitter-collector breakdown voltageV(BR) ECOIE = 0.1 mA7V
DETECTORVCE = 48 V,0.010.08μA
Dark currentIDARKVCE = 48 V, Ta = 85°C250μA
Collector-emitter capacitanceCCEV = 0 V, f = 1 MHz10pF

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
TLP293-4Toshiba
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