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TLP293-4

Photocoupler (InGaAs IRED & Photo-Transistor)

The TLP293-4 is a photocoupler (ingaas ired & photo-transistor) from Toshiba. View the full TLP293-4 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official TLP293-4 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Toshiba

Category

BJTs

TLP293-4 Key Specifications

ParameterValue
Collector-Emitter Breakdown Voltage V(BR)CEO80 V (min) at IC = 0.5 mA
Current Transfer Ratio (CTR)50% (min) at IF = 5 mA, VCE = 5 V
Input Forward Voltage VF1.25 V (typ) at IF = 10 mA
Dark Current IDARK0.01 μA (typ) at VCE = 48 V
Isolation Resistance RS1×10^12 Ω (min) at VS = 500 V, R.H. ≤ 60%
Rise Time tr2 μs (typ) at VCC = 10 V, IC = 2 mA, RL = 100 Ω
Fall Time tf3 μs (typ) at VCC = 10 V, IC = 2 mA, RL = 100 Ω
Turn-on Time ton3 μs (typ) at VCC = 10 V, IC = 2 mA, RL = 100 Ω

TLP293-4 Overview

Part: TLP293-4 — TOSHIBA Type: Photocoupler Description: A 4-channel photocoupler consisting of InGaAs infrared emitting diodes optically coupled to phototransistors, housed in a thin SO16 package, offering 3750 Vrms isolation and a wide operating temperature range of -55 to 125 °C.

Operating Conditions:

  • Operating temperature: -55 to 125 °C
  • Input forward current: 5 mA (for CTR test)
  • Collector-emitter voltage: 5 V (for CTR test)

Absolute Maximum Ratings:

  • Max input forward current: 50 mA
  • Max collector current: 50 mA
  • Max collector-emitter voltage: 80 V
  • Max isolation voltage: 3750 Vrms
  • Max junction temperature: 125 °C
  • Max operating temperature: 125 °C
  • Max storage temperature: 125 °C

Key Specs:

  • Collector-Emitter Breakdown Voltage V(BR)CEO: 80 V (min) at IC = 0.5 mA
  • Current Transfer Ratio (CTR): 50% (min) at IF = 5 mA, VCE = 5 V
  • Input Forward Voltage VF: 1.25 V (typ) at IF = 10 mA
  • Dark Current IDARK: 0.01 μA (typ) at VCE = 48 V
  • Isolation Resistance RS: 1×10^12 Ω (min) at VS = 500 V, R.H. ≤ 60%
  • Rise Time tr: 2 μs (typ) at VCC = 10 V, IC = 2 mA, RL = 100 Ω
  • Fall Time tf: 3 μs (typ) at VCC = 10 V, IC = 2 mA, RL = 100 Ω
  • Turn-on Time ton: 3 μs (typ) at VCC = 10 V, IC = 2 mA, RL = 100 Ω

Features:

  • InGaAs IRED & Photo-Transistor
  • Very small and thin SO16 package
  • Wide operating temperature range (-55 to 125 °C)
  • High isolation voltage (3750 Vrms)
  • UL, cUL, CQC, VDE approved safety standards

Applications:

  • Programmable Controllers
  • Switching Power Supplies
  • Simplex/Multiplex Data Transmissions
  • High-density surface mount applications

Package:

  • SO16 (Weight: 0.19 g typ.)

TLP293-4 Pin Configuration

1,3,5,7

: Anode

2,4,6,8 :

Cathode

9,11,13,15 :

Emitter

10,12,14,16 :

Collector

Start of commercial production 2014-04

TLP293-4 Electrical Characteristics

CHARACTERISTICCHARACTERISTICSYMBOLTEST CONDITIONMINTYP.MAXUNIT
Input forward voltageVFI F = 10 mA1.11.251.4V
Input reverse currentI RVR = 5 V--10μ A
Input capacitanceCTV = 0 V, f = 1 MHz-30-pF
Collector-emitter breakdown voltageV(BR) CEOI C = 0.5 mA80--V
Emitter-collector breakdown voltageV(BR) ECOI E = 0.1 mA7--V
Dark currentI DARKVCE = 48 V,-0.010.08μ A
I DARKVCE = 48 V, Ta = 85°C-250μ A
Collector-emitter capacitanceCCEV = 0 V, f = 1 MHz-10-pF

TLP293-4 Absolute Maximum Ratings

CharacteristicCharacteristicSymbolNoteRatingUnit
Input forward currentI F50mA
Input forward current derating (Ta ≥ 50°C)∆ I F / ∆ Ta- 0.59mA /°C
Input forward current(Pulsed)I FP(Note 1)1A
Power dissipationPD70mW
Power dissipation derating(Ta ≥ 50°C)∆ PD / ∆ Ta-0.82mW /°C
Input reverse voltageVR5V
Junction temperatureT j125°C
Collector-emitter voltageVCEO80V
Emitter-collector voltageVECO7V
Collector currentI C50mA
Collector power dissipation (1 Circuit)PC100mW
Collector power dissipation derating(Ta ≥ 25°C) (1 Circuit)∆ PC / ∆ Ta- 0.91mW /°C
Junction temperatureT j125°C
Operating temperature rangeT opr- 55 to 125°C
Storage temperature rangeT stg- 55 to 125°C
Lead soldering temperatureT sol260 (10s)°C
Total power dissipation (1 Circuit)PT170mW
Input power dissipation derating(Ta ≥ 25°C) (1 Circuit)∆ PT / ∆ Ta- 1.55mW /°C
Isolation Voltage AC, 60s, R.H. ≤ 60%BVS(Note 2)3750Vrms

Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ('Handling Precautions'/'Derating Concept and Methods') and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note1 : Pulse width ≤ 100 μ s, frequency 100 Hz

Note2 : This device is considered as a two-terminal device : All pins on the LED side are shorted together, and all pin on the photodetector side are shorted together.

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All BJTs datasheetsAll Toshiba datasheets (24)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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