TLP293-4

Photocoupler (InGaAs IRED & Photo-Transistor)

The TLP293-4 is a photocoupler (ingaas ired & photo-transistor) from Toshiba. View the full TLP293-4 datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Toshiba

Overview

Part: TLP293-4 — TOSHIBA Type: Photocoupler Description: A 4-channel photocoupler consisting of InGaAs infrared emitting diodes optically coupled to phototransistors, housed in a thin SO16 package, offering 3750 Vrms isolation and a wide operating temperature range of -55 to 125 °C.

Operating Conditions:

Operating temperature: -55 to 125 °C
Input forward current: 5 mA (for CTR test)
Collector-emitter voltage: 5 V (for CTR test)

Absolute Maximum Ratings:

Max input forward current: 50 mA
Max collector current: 50 mA
Max collector-emitter voltage: 80 V
Max isolation voltage: 3750 Vrms
Max junction temperature: 125 °C
Max operating temperature: 125 °C
Max storage temperature: 125 °C

Key Specs:

Collector-Emitter Breakdown Voltage V(BR)CEO: 80 V (min) at IC = 0.5 mA
Current Transfer Ratio (CTR): 50% (min) at IF = 5 mA, VCE = 5 V
Input Forward Voltage VF: 1.25 V (typ) at IF = 10 mA
Dark Current IDARK: 0.01 μA (typ) at VCE = 48 V
Isolation Resistance RS: 1×10^12 Ω (min) at VS = 500 V, R.H. ≤ 60%
Rise Time tr: 2 μs (typ) at VCC = 10 V, IC = 2 mA, RL = 100 Ω
Fall Time tf: 3 μs (typ) at VCC = 10 V, IC = 2 mA, RL = 100 Ω
Turn-on Time ton: 3 μs (typ) at VCC = 10 V, IC = 2 mA, RL = 100 Ω

Features:

InGaAs IRED & Photo-Transistor
Very small and thin SO16 package
Wide operating temperature range (-55 to 125 °C)
High isolation voltage (3750 Vrms)
UL, cUL, CQC, VDE approved safety standards

Applications:

Programmable Controllers
Switching Power Supplies
Simplex/Multiplex Data Transmissions
High-density surface mount applications

Package:

SO16 (Weight: 0.19 g typ.)

Pin Configuration

1,3,5,7

: Anode

2,4,6,8 :

Cathode

9,11,13,15 :

Emitter

10,12,14,16 :

Collector

Start of commercial production 2014-04

Electrical Characteristics

CHARACTERISTIC	SYMBOL	TEST CONDITION	MIN	TYP.	MAX	UNIT
Input forward voltage	VF	I F = 10 mA	1.1	1.25	1.4	V
Input reverse current	I R	VR = 5 V	-	-	10	μ A
Input capacitance	CT	V = 0 V, f = 1 MHz	-	30	-	pF
Collector-emitter breakdown voltage	V(BR) CEO	I C = 0.5 mA	80	-	-	V
Emitter-collector breakdown voltage	V(BR) ECO	I E = 0.1 mA	7	-	-	V
Dark current	I DARK	VCE = 48 V,	-	0.01	0.08	μ A
	I DARK	VCE = 48 V, Ta = 85°C	-	2	50	μ A
Collector-emitter capacitance	CCE	V = 0 V, f = 1 MHz	-	10	-	pF

Absolute Maximum Ratings

Characteristic	Symbol	Note	Rating	Unit
Input forward current	I F		50	mA
Input forward current derating (Ta ≥ 50°C)	∆ I F / ∆ Ta		- 0.59	mA /°C
Input forward current(Pulsed)	I FP	(Note 1)	1	A
Power dissipation	PD		70	mW
Power dissipation derating(Ta ≥ 50°C)	∆ PD / ∆ Ta		-0.82	mW /°C
Input reverse voltage	VR		5	V
Junction temperature	T j		125	°C
Collector-emitter voltage	VCEO		80	V
Emitter-collector voltage	VECO		7	V
Collector current	I C		50	mA
Collector power dissipation (1 Circuit)	PC		100	mW
Collector power dissipation derating(Ta ≥ 25°C) (1 Circuit)	∆ PC / ∆ Ta		- 0.91	mW /°C
Junction temperature	T j		125	°C
Operating temperature range	T opr		- 55 to 125	°C
Storage temperature range	T stg		- 55 to 125	°C
Lead soldering temperature	T sol		260 (10s)	°C
Total power dissipation (1 Circuit)	PT		170	mW
Input power dissipation derating(Ta ≥ 25°C) (1 Circuit)	∆ PT / ∆ Ta		- 1.55	mW /°C
Isolation Voltage AC, 60s, R.H. ≤ 60%	BVS	(Note 2)	3750	Vrms

Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ('Handling Precautions'/'Derating Concept and Methods') and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note1 : Pulse width ≤ 100 μ s, frequency 100 Hz

Note2 : This device is considered as a two-terminal device : All pins on the LED side are shorted together, and all pin on the photodetector side are shorted together.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
TLP293	Toshiba	SO16

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