ULN2003ADR

Part: ULN2003A, ULQ2003A from onsemi

Type: Darlington Transistor Array

Description: Seven NPN Darlington connected transistors with high breakdown voltage, internal suppression diodes, and 500 mA continuous collector current, suitable for driving inductive loads and incandescent lamps.

Operating Conditions:

• Supply voltage: Input compatible with 5.0 V TTL or CMOS Logic; Output voltage up to 50 V
• Operating temperature: ULN2003A: -20 to +85 °C; ULQ2003A: -40 to +85 °C
• Max continuous collector current: 500 mA (per device)

Absolute Maximum Ratings:

• Max output voltage: 50 V
• Max input voltage: 30 V
• Max continuous collector current: 500 mA
• Max junction temperature: 150 °C

Key Specs:

• Output Leakage Current (I_CEX): 50 m A max (V_O = 50 V, T_A = +25 °C)
• Collector-Emitter Saturation Voltage (V_CE(sat)): 1.6 V max (I_C = 350 mA, I_B = 500 m A)
• Input Current - On Condition (I_I(on)): 1.35 mA max (V_I = 3.85 V)
• Input Voltage - On Condition (V_I(on)): 3.0 V max (V_CE = 2.0 V, I_C = 300 mA)
• DC Current Gain (h_FE): 1000 min (V_CE = 2.0 V, I_C = 350 mA)
• Turn-On Delay Time (t_on): 1.0 μs max
• Turn-Off Delay Time (t_off): 1.0 μs max
• Clamp Diode Forward Voltage (V_F): 2.0 V max (I_F = 350 mA)

Features:

• Pb-Free Devices
• Seven NPN Darlington connected transistors
• Internal suppression diodes
• High breakdown voltage
• 2.7 kΩ series input resistor (ULx2003A)

Applications:

• Driving lamps
• Driving relays
• Driving printer hammers
• Industrial applications
• Consumer applications

Package:

• SOIC-16 (9.90x3.90x1.37)

• These are Pb-Free Devices

Figure 1. Representative Schematic Diagram

Figure 2. Pin Connections

A

= Assembly Location

WL

= Wafer Lot

Y = Year

WW = Work Week

G

= Pb-Free Package