ULN2003ADR

High Voltage, High Current Darlington Transistor Arrays

Manufacturer

Texas Instruments

Overview

Part: ULN2003A, ULQ2003A (Manufacturer: onsemi)

Type: High Voltage, High Current Darlington Transistor Arrays

Key Specs:

  • Output Voltage: 50 V
  • Collector Current - Continuous: 500 mA
  • DC Current Gain (hFE): 1000 (Min)
  • Input Resistor: 2.7 k

Features:

  • Pb-Free Devices
  • Seven NPN Darlington connected transistors
  • High breakdown voltage
  • Internal suppression diodes
  • Peak inrush currents to 500 mA
  • 2.7 k series input resistor (for ULx2003A)

Applications:

  • Driving lamps
  • Driving relays
  • Driving printer hammers
  • Industrial applications
  • Consumer applications
  • Systems utilizing 5.0 V TTL or CMOS Logic

Package:

  • SOIC-16: 9.90x3.90x1.37

Features

• These are Pb-Free Devices

Figure 1. Representative Schematic Diagram

Figure 2. Pin Connections

ORDERING INFORMATION

DevicePackageShipping†
ULN2003ADR2GSOIC-16
(Pb-Free)		2500 Tape & Reel
ULQ2003ADR2GSOIC-16
(Pb-Free)		2500 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

MAXIMUM RATINGS (TA = 25 °C, and rating apply to any one device in the package, unless otherwise noted.)

RatingSymbolValueUnit
Output VoltageVO50V
Input VoltageVI30V
Collector Current - ContinuousIC500mA
Base Current - ContinuousIB25mA
Operating Ambient Temperature Range
ULN2003A
ULQ2003A		TA−20 to +85
−40 to +85		°C
Storage Temperature RangeTstg−55 to +150°C
Junction TemperatureTJ150°C
Thermal Resistance, Junction-to-Ambient
Case 751B, D Suffix		RJA100°C/W
Thermal Resistance, Junction-to-Case
Case 751B, D Suffix		RJC20°C/W
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)		ESD2000
400
1500		V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Electrical Characteristics

CharacteristicSymbolMinTypMaxUnit
Output Leakage Current
(VO = 50 V, TA = +85 °C)
(VO = 50 V, TA = +25 °C)		ICEX−
−		−
−		100
50		A
Collector-Emitter Saturation Voltage
(IC = 350 mA, IB = 500 A)
(IC = 200 mA, IB = 350 A)
(IC = 100 mA, IB = 250 A)		VCE(sat)−
−
−		1.1
0.95
0.85		1.6
1.3
1.1		V
Input Current - On Condition
(VI = 3.85 V)		II(on)−0.931.35mA
Input Voltage - On Condition
(VCE = 2.0 V, IC = 200 mA)
(VCE = 2.0 V, IC = 250 mA)
(VCE = 2.0 V, IC = 300 mA)		VI(on)−
−
−		−
−
−		2.4
2.7
3.0		V
Input Current - Off Condition
(IC = 500 A, TA = 85 °C)		II(off)50100−A
DC Current Gain
(VCE = 2.0 V, IC = 350 mA)		hFE1000−−−
Input CapacitanceCI−1530pF
Turn-On Delay Time
(50% EI to 50% EO)		ton−0.251.0s
Turn-Off Delay Time
(50% EI to 50% EO)		toff−0.251.0s
Clamp Diode Leakage Current
TA = +25 °C
(VR = 50 V)
TA = +85 °C		IR−
−		−
−		50
100		A
Clamp Diode Forward Voltage
(IF = 350 mA)		VF−1.52.0V
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