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ULN2003A

High Voltage, High Current Darlington Transistor Arrays

The ULN2003A is a high voltage, high current darlington transistor arrays from Texas Instruments. View the full ULN2003A datasheet below including electrical characteristics.

Manufacturer

Texas Instruments

Overview

Part: ULN2003A, ULQ2003A from onsemi

Type: Darlington Transistor Array

Description: Seven NPN Darlington connected transistors with high breakdown voltage, internal suppression diodes, and 500 mA continuous collector current, suitable for driving inductive loads and incandescent lamps.

Operating Conditions:

  • Supply voltage: Input compatible with 5.0 V TTL or CMOS Logic; Output voltage up to 50 V
  • Operating temperature: ULN2003A: -20 to +85 °C; ULQ2003A: -40 to +85 °C
  • Max continuous collector current: 500 mA (per device)

Absolute Maximum Ratings:

  • Max output voltage: 50 V
  • Max input voltage: 30 V
  • Max continuous collector current: 500 mA
  • Max junction temperature: 150 °C

Key Specs:

  • Output Leakage Current (I_CEX): 50 m A max (V_O = 50 V, T_A = +25 °C)
  • Collector-Emitter Saturation Voltage (V_CE(sat)): 1.6 V max (I_C = 350 mA, I_B = 500 m A)
  • Input Current - On Condition (I_I(on)): 1.35 mA max (V_I = 3.85 V)
  • Input Voltage - On Condition (V_I(on)): 3.0 V max (V_CE = 2.0 V, I_C = 300 mA)
  • DC Current Gain (h_FE): 1000 min (V_CE = 2.0 V, I_C = 350 mA)
  • Turn-On Delay Time (t_on): 1.0 μs max
  • Turn-Off Delay Time (t_off): 1.0 μs max
  • Clamp Diode Forward Voltage (V_F): 2.0 V max (I_F = 350 mA)

Features:

  • Pb-Free Devices
  • Seven NPN Darlington connected transistors
  • Internal suppression diodes
  • High breakdown voltage
  • 2.7 kΩ series input resistor (ULx2003A)

Applications:

  • Driving lamps
  • Driving relays
  • Driving printer hammers
  • Industrial applications
  • Consumer applications

Package:

  • SOIC-16 (9.90x3.90x1.37)

Features

  • These are Pb-Free Devices

Figure 1. Representative Schematic Diagram

Figure 2. Pin Connections

A

= Assembly Location

WL

= Wafer Lot

Y = Year

WW = Work Week

G

= Pb-Free Package

Electrical Characteristics

CharacteristicCharacteristicSymbolMinTypMaxUnit
Output Leakage Current (V O = 50 V, T A = +85 ° C) (V O = 50 V, T A = +25 ° C)Output Leakage Current (V O = 50 V, T A = +85 ° C) (V O = 50 V, T A = +25 ° C)I CEX- -- -100 50m A
Collector-Emitter Saturation Voltage (I C = 350 mA, I B = 500 m A) (I C = 200 mA, I B = 350 m A) (I C = 100 mA, I B = 250 m A)Collector-Emitter Saturation Voltage (I C = 350 mA, I B = 500 m A) (I C = 200 mA, I B = 350 m A) (I C = 100 mA, I B = 250 m A)V CE(sat)- - -1.1 0.95 0.851.6 1.3 1.1V
Input Current - On Condition (V I = 3.85 V)Input Current - On Condition (V I = 3.85 V)I I(on)-0.931.35mA
Input Voltage - On Condition (V CE = 2.0 V, I C = 200 mA) (V CE = 2.0 V, I C = 250 mA) (V CE = 2.0 V, I C = 300 mA)Input Voltage - On Condition (V CE = 2.0 V, I C = 200 mA) (V CE = 2.0 V, I C = 250 mA) (V CE = 2.0 V, I C = 300 mA)V I(on)- - -- - -2.4 2.7 3.0V
Input Current - Off Condition (I C = 500 m A, T A = 85 ° C)Input Current - Off Condition (I C = 500 m A, T A = 85 ° C)I I(off)50100-m A
DC Current Gain (V CE = 2.0 V, I C = 350 mA)DC Current Gain (V CE = 2.0 V, I C = 350 mA)h FE1000---
Input CapacitanceInput CapacitanceC I-1530pF
Turn-On Delay Time (50% E I to 50% E O )Turn-On Delay Time (50% E I to 50% E O )t on-0.251.0m s
Turn-Off Delay Time (50% E I to 50% E O )Turn-Off Delay Time (50% E I to 50% E O )t off-0.251.0m s
Clamp Diode Leakage Current (V R = 50 V)T A = +25 ° C T A = +85 ° CI R- -- -50 100m A
Clamp Diode Forward Voltage (I F = 350 mA)Clamp Diode Forward Voltage (I F = 350 mA)V F-1.52.0V

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
ULN2003Texas Instruments
ULN2003ADRTexas Instruments16-SOIC (0.154", 3.90mm Width)
ULN2003ADR2Gonsemi16-SOIC (0.154", 3.90mm Width)
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