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ULN2003ADR2G

High Voltage, High Current Darlington Transistor Arrays

The ULN2003ADR2G is a high voltage, high current darlington transistor arrays from onsemi. View the full ULN2003ADR2G datasheet below including key specifications, electrical characteristics.

ULN2003ADR2G shares its datasheet with ULN2003, whose page lists every part number it covers.

Official ULN2003ADR2G datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

BJTs

Package

16-SOIC (0.154", 3.90mm Width)

ULN2003ADR2G Key Specifications

ParameterValue
Collector Current (Max)500mA
DC Current Gain (hFE)1000 @ 350mA, 2V
Mounting TypeSurface Mount
Operating Temperature-20°C ~ 85°C (TA)
Package / Case16-SOIC (0.154", 3.90mm Width)
Supplier Device Package16-SOIC
Transistor Type7 NPN Darlington
Vce Saturation1.6V @ 500µA, 350mA
Collector-Emitter Breakdown Voltage50V

ULN2003ADR2G Overview

Part: ULN2003A, ULQ2003A from onsemi

Type: Darlington Transistor Array

Description: Seven NPN Darlington connected transistors with high breakdown voltage, internal suppression diodes, and 500 mA continuous collector current, suitable for driving inductive loads and incandescent lamps.

Operating Conditions:

  • Supply voltage: Input compatible with 5.0 V TTL or CMOS Logic; Output voltage up to 50 V
  • Operating temperature: ULN2003A: -20 to +85 °C; ULQ2003A: -40 to +85 °C
  • Max continuous collector current: 500 mA (per device)

Absolute Maximum Ratings:

  • Max output voltage: 50 V
  • Max input voltage: 30 V
  • Max continuous collector current: 500 mA
  • Max junction temperature: 150 °C

Key Specs:

  • Output Leakage Current (I_CEX): 50 m A max (V_O = 50 V, T_A = +25 °C)
  • Collector-Emitter Saturation Voltage (V_CE(sat)): 1.6 V max (I_C = 350 mA, I_B = 500 m A)
  • Input Current - On Condition (I_I(on)): 1.35 mA max (V_I = 3.85 V)
  • Input Voltage - On Condition (V_I(on)): 3.0 V max (V_CE = 2.0 V, I_C = 300 mA)
  • DC Current Gain (h_FE): 1000 min (V_CE = 2.0 V, I_C = 350 mA)
  • Turn-On Delay Time (t_on): 1.0 μs max
  • Turn-Off Delay Time (t_off): 1.0 μs max
  • Clamp Diode Forward Voltage (V_F): 2.0 V max (I_F = 350 mA)

Features:

  • Pb-Free Devices
  • Seven NPN Darlington connected transistors
  • Internal suppression diodes
  • High breakdown voltage
  • 2.7 kΩ series input resistor (ULx2003A)

Applications:

  • Driving lamps
  • Driving relays
  • Driving printer hammers
  • Industrial applications
  • Consumer applications

Package:

  • SOIC-16 (9.90x3.90x1.37)

ULN2003ADR2G Features

  • These are Pb-Free Devices

Figure 1. Representative Schematic Diagram

Figure 2. Pin Connections

A

= Assembly Location

WL

= Wafer Lot

Y = Year

WW = Work Week

G

= Pb-Free Package

ULN2003ADR2G Electrical Characteristics

CharacteristicCharacteristicSymbolMinTypMaxUnit
Output Leakage Current (V O = 50 V, T A = +85 ° C) (V O = 50 V, T A = +25 ° C)Output Leakage Current (V O = 50 V, T A = +85 ° C) (V O = 50 V, T A = +25 ° C)I CEX- -- -100 50m A
Collector-Emitter Saturation Voltage (I C = 350 mA, I B = 500 m A) (I C = 200 mA, I B = 350 m A) (I C = 100 mA, I B = 250 m A)Collector-Emitter Saturation Voltage (I C = 350 mA, I B = 500 m A) (I C = 200 mA, I B = 350 m A) (I C = 100 mA, I B = 250 m A)V CE(sat)- - -1.1 0.95 0.851.6 1.3 1.1V
Input Current - On Condition (V I = 3.85 V)Input Current - On Condition (V I = 3.85 V)I I(on)-0.931.35mA
Input Voltage - On Condition (V CE = 2.0 V, I C = 200 mA) (V CE = 2.0 V, I C = 250 mA) (V CE = 2.0 V, I C = 300 mA)Input Voltage - On Condition (V CE = 2.0 V, I C = 200 mA) (V CE = 2.0 V, I C = 250 mA) (V CE = 2.0 V, I C = 300 mA)V I(on)- - -- - -2.4 2.7 3.0V
Input Current - Off Condition (I C = 500 m A, T A = 85 ° C)Input Current - Off Condition (I C = 500 m A, T A = 85 ° C)I I(off)50100-m A
DC Current Gain (V CE = 2.0 V, I C = 350 mA)DC Current Gain (V CE = 2.0 V, I C = 350 mA)h FE1000---
Input CapacitanceInput CapacitanceC I-1530pF
Turn-On Delay Time (50% E I to 50% E O )Turn-On Delay Time (50% E I to 50% E O )t on-0.251.0m s
Turn-Off Delay Time (50% E I to 50% E O )Turn-Off Delay Time (50% E I to 50% E O )t off-0.251.0m s
Clamp Diode Leakage Current (V R = 50 V)T A = +25 ° C T A = +85 ° CI R- -- -50 100m A
Clamp Diode Forward Voltage (I F = 350 mA)Clamp Diode Forward Voltage (I F = 350 mA)V F-1.52.0V

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All BJTs datasheetsAll onsemi datasheets (357)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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