ULN2001D

Darlington Transistor Array

The ULN2001D is a darlington transistor array from UMW. View the full ULN2001D datasheet below including key specifications, absolute maximum ratings.

Official ULN2001D datasheet (PDF) — the source this page was extracted from.

Manufacturer

UMW

ULN2001D Key Specifications

Parameter	Value
Collector Current (Max)	500mA
Current - Collector Cutoff (Max)	50µA
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Power (Max)	625mW
Supplier Device Package	8-SOP
Transistor Type	3 NPN Darlington
Vce Saturation	1.2V @ 800µA, 350mA
Collector-Emitter Breakdown Voltage	50V

ULN2001D Overview

Part: ULN2001D — UMW

Type: High Voltage, High Current Darlington Transistor Array

Description: A three-channel integrated high voltage, high current Darlington transistor array with internal freewheeling diodes, capable of 500mA collector output current per channel and 50V voltage resistance, compatible with TTL/CMOS logic signals.

Operating Conditions:

Output terminal voltage: 0–50 V
Operating temperature: -40 to +85 °C
Input voltage: 0–12 V

Absolute Maximum Ratings:

Max collector emitter voltage: 50 V
Max single collector peak current: 500 mA
Max junction temperature: 150 °C
Max storage temperature: -65 to +150 °C

Key Specs:

Channels: 3
Single collector continuous output current (TA=+85°C): 100 mA/ch
Input voltage (output turned on, Iout=400mA): 2.8–12 V
Input voltage (output shutdown): 0–0.7 V
Collector turn off leakage current (VCE=50V, II=0): 50 μA (Max)
Clamp diode forward voltage drop (IF=350mA, TA=25°C): 1.4 V (Typical), 1.6 V (Max)
Low to high transmission delay (VL=12V, RL=45Ω): 0.15 μs (Typical), 1 μs (Max)
High to low transmission delay (VL=12V, RL=45Ω): 0.15 μs (Typical), 1 μs (Max)

Features:

500mA collector output current (single circuit)
High voltage resistance (50V)
Input compatible TTL/CMOS logic signal
Input port integrates 4K pull-down resistance to ground
Internal freewheeling diode for inductive loads

Applications:

Relay drive
Indicator light driver
Display screen driver
Stepper motor drive
Logic buffer

Package:

SOP-8

ULN2001D Applications

Relay drive
Indicator light driver
Display screen driver

ULN2001D Absolute Maximum Ratings

parameters	parameters	Symbol	value	Unit
Collector emitter voltage (6-8 pins)	Collector emitter voltage (6-8 pins)	V CE	50	V
COM terminal voltage (5 pins)	COM terminal voltage (5 pins)	V COM	50	V
Input voltage (1-3 pins)	Input voltage (1-3 pins)	V I	30	V
Single collector peak current	Single collector peak current	I CP	500	mA
Output clamp diode forward peak current	Output clamp diode forward peak current	I OK	500	mA
Maximum peak current of the total emitter	Maximum peak current of the total emitter	I ET	-1	A
Packaging thermal impedance (1)(2) (3)	SOP8	θ JA	160	°C /W
Maximum operating junction temperature	Maximum operating junction temperature	T J	150	°C
Welding temperature	Welding temperature		260	°C ,10s
Storage temperature range	Storage temperature range	T stg	-65 to +150	°C

Note: 1. The maximum power consumption can be calculated according to the following relationship

ULN2001D Recommended Operating Conditions

parameters	parameters	Symbol	Condition	Mini	Max	Unit
Output terminal voltage	Output terminal voltage	V CE(SUS)		0	50	V
Output current	Output current	I OUT	持续输出 ,T A = +85 °C Continuous output		100	mA/ch
INPUT VOLTAGE	INPUT VOLTAGE	V IN		0	12	V
Input voltage (output turned on)	Input voltage (output turned on)	V IN(ON)	I out =400mA	2.8	12	V
Input voltage (output shutdown)	Input voltage (output shutdown)	V IN(OFF)		0	0.7	V
Clamp diode reverse voltage	Clamp diode reverse voltage	V R			50	V
Clamp diode forward peak current	Clamp diode forward peak current	I F			350	mA
Working temperature range	Working temperature range	T A		-40	+85	°C °C
power DIP8 Working temperature	power DIP8 Working temperature	P D T J	T A = +85 °C	-40	0.4 +125	W °C °C
Dissipative power consumption	SOP8	P D	T A = +25 °C		0.625	W
Dissipative power consumption	SOP8	P D	T A = +85 °C		0.25	W

Note: 1. TA represents the ambient temperature at which the circuit operates

The calculation method for circuit power consumption is:

PD=VCE(ON)1×IC1+ VCE(ON)2×IC2+ VCE(ON)3×IC3 + VIN1×IIN1+ VIN2×IIN2+ VIN3×IIN3

Note 2 VCE (ON) n represents the conduction voltage drop of the corresponding channel, where n=1,2,3;

IC Represents the average load current of the corresponding channel, where n=1,2,3

VINnRepresents the average high-level input signal of the corresponding channel, where n=1,2,3;

IINnRepresents the average input current of the corresponding channel's signal, where n=1,2,3;

ULN2001D Typical Application

Relay drive
Indicator light driver
Display screen driver

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All Discrete Semiconductors datasheets All UMW datasheets (36)

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