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TPD6E05U06

ESD Protection Device

The TPD6E05U06 is a esd protection device from Texas Instruments. View the full TPD6E05U06 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

TPD6E05U06 shares its datasheet with TPD1E05U06, whose page lists every part number it covers.

Official TPD6E05U06 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

Category

Diodes

Package

USON-14

TPD6E05U06 Key Specifications

ParameterValue
Data RateUp to 6 Gbps
Channel Count6 (3 differential pairs)
ESD Rating (CDM)±1500V
ESD Rating (HBM)±4000V
Storage Temperature-65°C to 155°C
Leakage Current (Max)10nA
Operating Temperature-40°C to 125°C
Input Pin Voltage (VIO)0V to 5.5V
IO Capacitance (Typical)0.42pF to 0.5pF
DC Breakdown Voltage (Min)6.5V
Peak Pulse Power (8/20µS)40W
EFT Protection (IEC 61000-4-4, 5/50ns)80A
ESD Protection (IEC 61000-4-2 Air Gap)±15kV
ESD Protection (IEC 61000-4-2 Contact)±12kV
Surge Protection (IEC 61000-4-5, 8/20µS)2.5A

TPD6E05U06 Overview

Part: TPD1E05U06, TPD4E05U06, TPD6E05U06 — Texas Instruments

Type: ESD Protection Device

Description: A family of 1, 4, or 6 channel unidirectional Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diodes with ultra-low capacitance, offering IEC 61000-4-2 level 4 ESD protection (±12kV contact, ±15kV air gap) and supporting data rates up to 6 Gbps.

Operating Conditions:

  • Input pin voltage: 0–5.5 V
  • Operating free-air temperature: -40 to 125 °C

Absolute Maximum Ratings:

  • Max Electrical Fast Transient (IEC 61000-4-4): 80 A (5/50ns)
  • Max Peak Pulse Current (IEC 61000-4-5): 2.5 A (8/20μs)
  • Max Peak Pulse Power (IEC 61000-4-5): 40 W (8/20μs)
  • Max Ambient Operating Temperature: 125 °C
  • Max Storage Temperature: 155 °C

Key Specs:

  • Reverse stand-off voltage (V RWM): 5.5 V (max, I IO < 10 μA)
  • Breakdown voltage (V BR): 6.5 V (min, I IO = 1 mA)
  • Clamp voltage (V Clamp): 10 V (typ, I PP = 1 A, TLP, I/O to GND)
  • Leakage current (I LEAK): 10 nA (max, V IO = 2.5 V)
  • Dynamic Resistance (R DYN): 0.7–0.8 Ω (typ, DYA package)
  • Line capacitance (C L): 0.42 pF (typ, TPD1E05U06, V IO = 2.5 V; ƒ = 1 MHz)
  • Line capacitance (C L): 0.5 pF (typ, TPD4E05U06, V IO = 2.5 V; ƒ = 1 MHz)
  • Line capacitance (C L): 0.47 pF (typ, TPD6E05U06, V IO = 2.5 V; ƒ = 1 MHz)

Features:

  • IEC 61000-4-2 level 4 ESD protection (±12kV contact, ±15kV air gap)
  • IEC 61000-4-4 EFT protection -80A (5/50ns)
  • IEC 61000-4-5 surge protection -2.5A (8/20μs)
  • IO capacitance 0.42pF to 0.5pF (typical)
  • DC breakdown voltage 6.5V (minimum)
  • Ultra low leakage current 10nA (maximum)
  • Low ESD clamping voltage
  • Easy straight-through routing packages

Applications:

  • HDMI 1.4b
  • HDMI 2.0
  • USB 3.0
  • MHL
  • LVDS interfaces
  • DisplayPort
  • PCI-express®
  • eSata interfaces
  • V-by-One® HS

Package:

  • DPY (X1SON, 2 pins)
  • DYA (SOD-523, 2 pins)
  • DQA (USON, 10 pins)
  • RVZ (USON, 14 pins)

TPD6E05U06 Features

  • IEC 61000-4-2 level 4 ESD protection
  • -±12kV contact discharge
  • -±15kV air gap discharge
  • IEC 61000-4-4 EFT protection -80A (5/50ns)
  • IEC 61000-4-5 surge protection -2.5A (8/20μs)
  • IO capacitance 0.42pF to 0.5pF (typical)
  • DC breakdown voltage 6.5V (minimum)
  • Ultra low leakage current 10nA (maximum)
  • Low ESD clamping voltage
  • Industrial temperature range: -40°C to +125°C
  • Easy straight-through routing packages
  • Industry standard SOD-523 package (1.60mm × 0.80mm × 0.65mm)

TPD6E05U06 Applications

Simplified Schematic

Simplified Schematic

TPD6E05U06 Pin Configuration

Figure 4-1. DPY Package 2-Pin X1SON (Top View) Figure 4-2. DYA Package 2-Pin SOD-523 (Top View)

TPD6E05U06 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETERPARAMETERTEST CONDITIONMINTYPMAXUNIT
INPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCE
V RWMReverse stand-off voltageI IO < 10 μA5.5V
V BRBreak-down voltageI IO = 1 mA6.58.5V
V ClampClamp voltageI PP = 1 A, TLP, from I/O to GND (1)10V
V ClampClamp voltageI PP = 5 A, TLP, from I/O to GND (1)14V
V ClampClamp voltageI PP = 1 A, TLP, from GND to I/O (1)3V
V ClampClamp voltageI PP = 5 A, TLP, from GND to I/O (1)7V
I LEAKLeakage currentV IO = 2.5 V0.0110nA
R DYNDYA packageI/O to GND (2)0.8Ω
R DYNDYA packageGND to I/O (2)0.8Ω
R DYNDYA packageI/O to GND (2)0.8Ω
R DYNDYA packageGND to I/O (2)0.7Ω
R DYNDYA packageI/O to GND (2)0.8Ω
R DYNDQA packageGND to I/O (2)0.8Ω
R DYNDYA packageI/O to GND (2)0.8Ω
R DYNRVZ packageGND to I/O (2)0.8Ω
CAPACITANCECAPACITANCECAPACITANCECAPACITANCECAPACITANCECAPACITANCECAPACITANCE
C LLine capacitance (3)V IO = 2.5 V; ƒ = 1 MHz , I/O to GNDTPD1E05U06 DPY package0.42pF
C LLine capacitance (3)V IO = 2.5 V; ƒ = 1 MHz , I/O to GNDTPD1E05U06 DYA package0.42pF
C LLine capacitance (3)V IO = 2.5 V; ƒ = 1 MHz , I/O to GNDTPD4E05U06 DQA package0.5pF
C LLine capacitance (3)V IO = 2.5 V; ƒ = 1 MHz , I/O to GNDTPD6E05U06 RVZ package0.47pF
Δ C IO- TO-GNDVariation of input capacitanceGND Pin = 0 V, f = 1 MHz, VBIAS = 2.5 V, Channel x pin to GND - channel y pin to GNDGND Pin = 0 V, f = 1 MHz, VBIAS = 2.5 V, Channel x pin to GND - channel y pin to GND0.05 0.07pF

TPD6E05U06 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MINMAXUNIT
Electrical Fast Transient (2) (3)IEC 61000-4-4 (5/50ns)80A
Peak Pulse (2) (3)IEC 61000-4-5 Current (8/20us)2.5A
Peak Pulse (2) (3)IEC 61000-4-5 Power (8/20us)40W
T AAmbient Operating Temperature-40125°C
T stgStorage Temperature-65155°C

TPD6E05U06 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MINNOMMAXUNIT
V IOInput pin voltage05.5V
T AOperating free-air temperature-40125°C

TPD6E05U06 Thermal Information

TPD1E05U06TPD1E05U06TPD4E05U06TPD6E05U06
THERMAL METRIC (1)THERMAL METRIC (1)DPY (X1SON)DYA (SOD523)DQA (USON)RVZ (USON)
2 PINS2 PINS10 PINS14 PINS
R θJAJunction-to-ambient thermal resistance697.3772.1327197.9
R θJC(top)Junction-to-case (top) thermal resistance471444.6189.5119.1
R θJBJunction-to-board thermal resistance575.9540.4257.792.6
Ψ JTJunction-to-top characterization parameter175.7159.960.922
Ψ JBJunction-to-board characterization parameter575.1533.925791.6

TPD6E05U06 Typical Application

The TPDxE05U06 is a diode type TVS which is typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.

TPD6E05U06 Package Information

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
TPD1E05U06Texas Instruments—
TPD1E05U06-Q1Texas Instruments—
TPD1E05U06DPYTexas InstrumentsX1SON-2
TPD1E05U06DPYRTexas InstrumentsX2-SON-2(0.6x1)
TPD1E05U06DPYR.BTexas InstrumentsX1SON-2
TPD1E05U06DPYTTexas InstrumentsX1SON
TPD1E05U06DPYT.BTexas InstrumentsX1SON-2
TPD1E05U06DYATexas InstrumentsSOD-523
TPD1E05U06DYARTexas InstrumentsSOT-5X3
TPD1E05U06DYAR.BTexas InstrumentsSOD-523
TPD4E05U06Texas InstrumentsUSON-10
TPDXE05U06Texas Instruments—

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll Texas Instruments datasheets (2,418)

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