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TPD1E05U06-Q1

ESD Protection Device

The TPD1E05U06-Q1 is a esd protection device from Texas Instruments. View the full TPD1E05U06-Q1 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

TPD1E05U06-Q1 shares its datasheet with TPD1E05U06, whose page lists every part number it covers.

Official TPD1E05U06-Q1 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

Category

Diodes

TPD1E05U06-Q1 Key Specifications

ParameterValue
TopologyUnidirectional TVS
Data RateUp to 6 Gbps
QualificationAutomotive Q100
IO Capacitance0.42 pF to 0.5 pF (typical)
Leakage Current10 nA (max)
IEC 61000-4-2 ESD±12 kV contact, ±15 kV air gap
IEC 61000-4-4 EFT80 A (5/50 ns)
Number Of Channels1
IEC 61000-4-5 Surge2.5 A (8/20 μs)
DC Breakdown Voltage6.5 V (min)
Reverse Standoff Voltage5.5 V (min)
Operating Temperature Range-40°C to +125°C

TPD1E05U06-Q1 Overview

Part: TPD1E05U06, TPD4E05U06, TPD6E05U06 — Texas Instruments

Type: ESD Protection Device

Description: A family of 1, 4, or 6 channel unidirectional Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diodes with ultra-low capacitance, offering IEC 61000-4-2 level 4 ESD protection (±12kV contact, ±15kV air gap) and supporting data rates up to 6 Gbps.

Operating Conditions:

  • Input pin voltage: 0–5.5 V
  • Operating free-air temperature: -40 to 125 °C

Absolute Maximum Ratings:

  • Max Electrical Fast Transient (IEC 61000-4-4): 80 A (5/50ns)
  • Max Peak Pulse Current (IEC 61000-4-5): 2.5 A (8/20μs)
  • Max Peak Pulse Power (IEC 61000-4-5): 40 W (8/20μs)
  • Max Ambient Operating Temperature: 125 °C
  • Max Storage Temperature: 155 °C

Key Specs:

  • Reverse stand-off voltage (V RWM): 5.5 V (max, I IO < 10 μA)
  • Breakdown voltage (V BR): 6.5 V (min, I IO = 1 mA)
  • Clamp voltage (V Clamp): 10 V (typ, I PP = 1 A, TLP, I/O to GND)
  • Leakage current (I LEAK): 10 nA (max, V IO = 2.5 V)
  • Dynamic Resistance (R DYN): 0.7–0.8 Ω (typ, DYA package)
  • Line capacitance (C L): 0.42 pF (typ, TPD1E05U06, V IO = 2.5 V; ƒ = 1 MHz)
  • Line capacitance (C L): 0.5 pF (typ, TPD4E05U06, V IO = 2.5 V; ƒ = 1 MHz)
  • Line capacitance (C L): 0.47 pF (typ, TPD6E05U06, V IO = 2.5 V; ƒ = 1 MHz)

Features:

  • IEC 61000-4-2 level 4 ESD protection (±12kV contact, ±15kV air gap)
  • IEC 61000-4-4 EFT protection -80A (5/50ns)
  • IEC 61000-4-5 surge protection -2.5A (8/20μs)
  • IO capacitance 0.42pF to 0.5pF (typical)
  • DC breakdown voltage 6.5V (minimum)
  • Ultra low leakage current 10nA (maximum)
  • Low ESD clamping voltage
  • Easy straight-through routing packages

Applications:

  • HDMI 1.4b
  • HDMI 2.0
  • USB 3.0
  • MHL
  • LVDS interfaces
  • DisplayPort
  • PCI-express®
  • eSata interfaces
  • V-by-One® HS

Package:

  • DPY (X1SON, 2 pins)
  • DYA (SOD-523, 2 pins)
  • DQA (USON, 10 pins)
  • RVZ (USON, 14 pins)

TPD1E05U06-Q1 Features

  • IEC 61000-4-2 level 4 ESD protection
  • -±12kV contact discharge
  • -±15kV air gap discharge
  • IEC 61000-4-4 EFT protection -80A (5/50ns)
  • IEC 61000-4-5 surge protection -2.5A (8/20μs)
  • IO capacitance 0.42pF to 0.5pF (typical)
  • DC breakdown voltage 6.5V (minimum)
  • Ultra low leakage current 10nA (maximum)
  • Low ESD clamping voltage
  • Industrial temperature range: -40°C to +125°C
  • Easy straight-through routing packages
  • Industry standard SOD-523 package (1.60mm × 0.80mm × 0.65mm)

TPD1E05U06-Q1 Applications

Simplified Schematic

Simplified Schematic

TPD1E05U06-Q1 Pin Configuration

Figure 4-1. DPY Package 2-Pin X1SON (Top View) Figure 4-2. DYA Package 2-Pin SOD-523 (Top View)

TPD1E05U06-Q1 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETERPARAMETERTEST CONDITIONMINTYPMAXUNIT
INPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCE
V RWMReverse stand-off voltageI IO < 10 μA5.5V
V BRBreak-down voltageI IO = 1 mA6.58.5V
V ClampClamp voltageI PP = 1 A, TLP, from I/O to GND (1)10V
V ClampClamp voltageI PP = 5 A, TLP, from I/O to GND (1)14V
V ClampClamp voltageI PP = 1 A, TLP, from GND to I/O (1)3V
V ClampClamp voltageI PP = 5 A, TLP, from GND to I/O (1)7V
I LEAKLeakage currentV IO = 2.5 V0.0110nA
R DYNDYA packageI/O to GND (2)0.8Ω
R DYNDYA packageGND to I/O (2)0.8Ω
R DYNDYA packageI/O to GND (2)0.8Ω
R DYNDYA packageGND to I/O (2)0.7Ω
R DYNDYA packageI/O to GND (2)0.8Ω
R DYNDQA packageGND to I/O (2)0.8Ω
R DYNDYA packageI/O to GND (2)0.8Ω
R DYNRVZ packageGND to I/O (2)0.8Ω
CAPACITANCECAPACITANCECAPACITANCECAPACITANCECAPACITANCECAPACITANCECAPACITANCE
C LLine capacitance (3)V IO = 2.5 V; ƒ = 1 MHz , I/O to GNDTPD1E05U06 DPY package0.42pF
C LLine capacitance (3)V IO = 2.5 V; ƒ = 1 MHz , I/O to GNDTPD1E05U06 DYA package0.42pF
C LLine capacitance (3)V IO = 2.5 V; ƒ = 1 MHz , I/O to GNDTPD4E05U06 DQA package0.5pF
C LLine capacitance (3)V IO = 2.5 V; ƒ = 1 MHz , I/O to GNDTPD6E05U06 RVZ package0.47pF
Δ C IO- TO-GNDVariation of input capacitanceGND Pin = 0 V, f = 1 MHz, VBIAS = 2.5 V, Channel x pin to GND - channel y pin to GNDGND Pin = 0 V, f = 1 MHz, VBIAS = 2.5 V, Channel x pin to GND - channel y pin to GND0.05 0.07pF

TPD1E05U06-Q1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MINMAXUNIT
Electrical Fast Transient (2) (3)IEC 61000-4-4 (5/50ns)80A
Peak Pulse (2) (3)IEC 61000-4-5 Current (8/20us)2.5A
Peak Pulse (2) (3)IEC 61000-4-5 Power (8/20us)40W
T AAmbient Operating Temperature-40125°C
T stgStorage Temperature-65155°C

TPD1E05U06-Q1 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MINNOMMAXUNIT
V IOInput pin voltage05.5V
T AOperating free-air temperature-40125°C

TPD1E05U06-Q1 Thermal Information

TPD1E05U06TPD1E05U06TPD4E05U06TPD6E05U06
THERMAL METRIC (1)THERMAL METRIC (1)DPY (X1SON)DYA (SOD523)DQA (USON)RVZ (USON)
2 PINS2 PINS10 PINS14 PINS
R θJAJunction-to-ambient thermal resistance697.3772.1327197.9
R θJC(top)Junction-to-case (top) thermal resistance471444.6189.5119.1
R θJBJunction-to-board thermal resistance575.9540.4257.792.6
Ψ JTJunction-to-top characterization parameter175.7159.960.922
Ψ JBJunction-to-board characterization parameter575.1533.925791.6

TPD1E05U06-Q1 Typical Application

The TPDxE05U06 is a diode type TVS which is typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.

TPD1E05U06-Q1 Package Information

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
TPD1E05U06Texas Instruments—
TPD1E05U06DPYTexas InstrumentsX1SON-2
TPD1E05U06DPYRTexas InstrumentsX2-SON-2(0.6x1)
TPD1E05U06DPYR.BTexas InstrumentsX1SON-2
TPD1E05U06DPYTTexas InstrumentsX1SON
TPD1E05U06DPYT.BTexas InstrumentsX1SON-2
TPD1E05U06DYATexas InstrumentsSOD-523
TPD1E05U06DYARTexas InstrumentsSOT-5X3
TPD1E05U06DYAR.BTexas InstrumentsSOD-523
TPD4E05U06Texas InstrumentsUSON-10
TPD6E05U06Texas InstrumentsUSON-14
TPDXE05U06Texas Instruments—

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll Texas Instruments datasheets (2,437)

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