TPD4E1U06DBV
ESD Protection DeviceThe TPD4E1U06DBV is a esd protection device from Texas Instruments. View the full TPD4E1U06DBV datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
TPD4E1U06DBV shares its datasheet with TPD4E1U06, whose page lists every part number it covers.
Official TPD4E1U06DBV datasheet (PDF) — the source this page was extracted from.
TPD4E1U06DBV Key Specifications
| Parameter | Value |
|---|---|
| IO Capacitance | 0.8 pF (Typical) |
| Leakage Current | 10 nA (Maximum) |
| Number Of Channels | 4 |
| Input Voltage Range | 0 V to 5.5 V |
| DC Breakdown Voltage | 6.5 V (Minimum) |
| Package Dimensions (DBV) | 2.90 mm x 1.60 mm |
| Operating Temperature Range | -40°C to +125°C |
| EFT Protection (IEC 61000-4-4) | 80 A (5/50 ns) |
| Surge Protection (IEC 61000-4-5) | 3 A (8/20 μs) |
| ESD Protection (IEC 61000-4-2 Air-Gap) | ±15 kV |
| ESD Protection (IEC 61000-4-2 Contact) | ±15 kV |
TPD4E1U06DBV Overview
Part: TPD4E1U06 (TPD4E1U06DCK / TPD4E1U06DBV) — Texas Instruments
Type: Quad-Channel Unidirectional TVS ESD Protection Diode Array
Description: Quad-channel, high-speed ESD protection device with 0.8 pF typical line capacitance, 5.5 V reverse stand-off voltage, and IEC 61000-4-2 Level 4 protection (±15 kV contact and air-gap).
Operating Conditions:
- Supply voltage: not applicable (passive device; I/O pin voltage 0 to 5.5 V)
- Operating temperature: -40 to 125 °C
- Reverse stand-off voltage (VRWM): 5.5 V max at IIO = 10 μA
Absolute Maximum Ratings:
- IEC 61000-4-4 EFT protection (5/50 ns): 80 A
- IEC 61000-4-5 peak pulse current (8/20 μs): 3 A
- IEC 61000-4-5 peak pulse power (8/20 μs): 45 W
- Operating temperature: -40 to 125 °C
- Storage temperature: -65 to 115 °C
Key Specs:
- Breakdown voltage (VBR, IO to GND): 6.5 V min, 8.5 V max at IIO = 1 mA
- Leakage current (ILEAK): 1 nA typ, 10 nA max at VIO = 2.5 V
- Line capacitance (CL): 0.8 pF typ, 1 pF max at f = 1 MHz, VBIAS = 2.5 V, 25 °C
- Channel-to-channel capacitance: 0.006 pF typ / 0.015 pF max (DCK); 0.01 pF typ / 0.025 pF max (DBV)
- Clamp voltage (8/20 μs, I/O to GND): 11 V typ at IPP = 1 A; 15 V typ at IPP = 3 A
- Dynamic resistance: 1.0 Ω typ (pin to GND); 0.6 Ω typ (GND to pin)
- Capacitance variation between channels (ΔCIO-TO-GND): 0.025 pF typ, 0.07 pF max
- ESD ratings: HBM ±4000 V, CDM ±1500 V; IEC 61000-4-2 contact and air-gap ±15000 V
Features:
- IEC 61000-4-2 Level 4 ESD protection (±15 kV contact and air-gap)
- IEC 61000-4-4 EFT protection (80 A, 5/50 ns)
- IEC 61000-4-5 surge protection (3 A, 8/20 μs)
- Ultra-low leakage current (10 nA max)
- Low ESD clamping voltage
- Industrial temperature range of -40 to +125 °C
- Small, easy-to-route packages
Applications:
- USB 2.0
- Ethernet
- HDMI control lines
- MIPI bus
- LVDS
- SATA
Package:
- SC70 (DCK), 6 pins, 2.00 mm × 1.25 mm
- SOT-23 (DBV), 6 pins, 2.90 mm × 1.60 mm
TPD4E1U06DBV Features
- 1 · IEC 61000-4-2 Level 4 ESD Protection
- -±15-kV Contact Discharge
- -±15-kV Air-Gap Discharge
- IEC 61000-4-4 EFT Protection
- -80 A (5/50 ns)
- IEC 61000-4-5 Surge Protection -3 A (8/20 μ s)
- IO Capacitance 0.8 pF (Typical)
- DC Breakdown Voltage 6.5 V (Minimum)
- Ultra Low Leakage Current 10 nA (Maximum)
- Low ESD Clamping Voltage
- Industrial Temperature Range: -40°C to +125°C
- Small, Easy-to-Route DCK, and DBV Package
TPD4E1U06DBV Applications
- USB 2.0
- Ethernet
- HDMI Control Lines
- MIPI Bus
- LVDS
- SATA
1
TPD4E1U06DBV Pin Configuration
TPD4E1U06DBV Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
| PARAMETER | PARAMETER | TEST CONDITIONS | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|---|
| V RWM | Reverse stand-off voltage | I IO = 10 μA | I IO = 10 μA | 5.5 | V | ||
| V CLAMP | Clamp voltage with ESD strike | I PP = 1 A, tp = 8/20 μ s, from I/O to GND (1) | I PP = 1 A, tp = 8/20 μ s, from I/O to GND (1) | 11 | V | ||
| V CLAMP | Clamp voltage with ESD strike | I PP = 3 A, tp = 8/20 μ s, from I/O to GND (1) | I PP = 3 A, tp = 8/20 μ s, from I/O to GND (1) | 15 | V | ||
| R DYN | Dynamic resistance | Pin x to GND pin (2) | Pin x to GND pin (2) | 1.0 | Ω | ||
| R DYN | Dynamic resistance | GND to pin x | GND to pin x | 0.6 | Ω | ||
| C L | Line capacitance | f = 1 MHz, V BIAS = 2.5 V, 25°C | f = 1 MHz, V BIAS = 2.5 V, 25°C | 0.8 | 1 | pF | |
| C CROSS | Channel to channel input capacitance | Pin 2 = 0 V, f = 1 MHz, V BIAS = 2.5 V, between channel pins | DCK package | 0.006 | 0.015 | pF | |
| C CROSS | Channel to channel input capacitance | Pin 2 = 0 V, f = 1 MHz, V BIAS = 2.5 V, between channel pins | DBV package | 0.01 | 0.025 | pF | |
| ∆ C IO-TO-GND | Variation of channel input capacitance | Pin 2 = 0 V , f = 1 MHz, V BIAS = 2.5 V, channel_x pin to ground - channel_y pin to ground | Pin 2 = 0 V , f = 1 MHz, V BIAS = 2.5 V, channel_x pin to ground - channel_y pin to ground | 0.025 | 0.07 | pF | |
| V BR | Break-down voltage, IO to GND | I IO = 1 mA | I IO = 1 mA | 6.5 | 8.5 | V | |
| I LEAK | Leakage current | V IO = 2.5 V | V IO = 2.5 V | 1 | 10 | nA |
TPD4E1U06DBV Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| IEC 61000-4-4 EFT protection (5/50 ns) | 80 | A | ||
| I PP | IEC 61000-4-5 surge protection (8/20 μ s) peak pulse current | 3 | A | |
| P PP | IEC 61000-4-5 surge protection (8/20 μ s) peak pulse power | 45 | W | |
| Operating temperature | -40 | 125 | °C | |
| T stg | Storage temperature | -65 | 115 | °C |
TPD4E1U06DBV Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| V IO | Input pin voltage | 0 | 5.5 | V |
| T A | Operating free-air temperature | -40 | 125 | °C |
TPD4E1U06DBV Thermal Information
| THERMAL METRIC | (1) | TPD4E1U06 - DBV (SOT-23) - 6 PINS | TPD4E1U06 - DCK (SC-70) - 6 PINS | UNIT |
|---|---|---|---|---|
| R θ JA | Junction-to-ambient thermal resistance | 224.3 | 274.3 | °C/W |
| R θ JC(top) | Junction-to-case (top) thermal resistance | 166.1 | 113.8 | °C/W |
| R θ JB | Junction-to-board thermal resistance | 68.4 | 76.7 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 57.3 | 3.6 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 67.9 | 75.9 | °C/W |
TPD4E1U06DBV Typical Application
The TPD4E1U06 is a TVS diode array which is typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| TPD4E1U06 | Texas Instruments | — |
| TPD4E1U06DBVR | Texas Instruments | SOT-23-6 |
| TPD4E1U06DCK | Texas Instruments | SC70-6 |
| TPD4E1U06DCKR | Texas Instruments | 6-TSSOP, SC-88, SOT-363 |
Other Diodes
- CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
- SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
- BSD3A311V – Brightking, ESD Protection Diode
- CH213K – WCH, Low Dropout Ideal Diode Chip
- VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)
All Diodes datasheetsAll Texas Instruments datasheets (2,442)
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