TPD4E1U06DBVR
TPD4E1U06 Quad-Channel, High-Speed ESD Protection Device
Manufacturer
Texas Instruments
Category
Circuit Protection
Overview
Part: TPD4E1U06 from Texas Instruments
Type: Quad-Channel ESD Protection Device
Key Specs:
- IEC 61000-4-2 Contact Discharge: ±15-kV
- IEC 61000-4-2 Air-Gap Discharge: ±15-kV
- IEC 61000-4-4 EFT Protection: 80 A (5/50 ns)
- IEC 61000-4-5 Surge Protection: 3 A (8/20 μs)
- IO Capacitance: 0.8 pF (Typical)
- DC Breakdown Voltage: 6.5 V (Minimum)
- Leakage Current: 10 nA (Maximum)
- Industrial Temperature Range: –40°C to +125°C
Features:
- IEC 61000-4-2 Level 4 ESD Protection
- IEC 61000-4-4 EFT Protection
- IEC 61000-4-5 Surge Protection
- Ultra Low Leakage Current
- Low ESD Clamping Voltage
- Industrial Temperature Range: –40°C to +125°C
- Small, Easy-to-Route DCK, and DBV Package
- Quad-channel unidirectional Transient Voltage Suppressor (TVS)
- Ultra low capacitance
Applications:
- USB 2.0
- Ethernet
- HDMI Control Lines
- MIPI Bus
- LVDS
- SATA
- MHL
- DisplayPort
Package:
- DCK (SC70): 2.00 mm × 1.25 mm
- DBV (SOT-23): 2.90 mm × 1.60 mm
Features
- 1• IEC 61000-4-2 Level 4 ESD Protection
- ±15-kV Contact Discharge
- ±15-kV Air-Gap Discharge
- IEC 61000-4-4 EFT Protection – 80 A (5/50 ns)
- IEC 61000-4-5 Surge Protection – 3 A (8/20 μs)
- IO Capacitance 0.8 pF (Typical)
- DC Breakdown Voltage 6.5 V (Minimum)
- Ultra Low Leakage Current 10 nA (Maximum)
- Low ESD Clamping Voltage
- • Industrial Temperature Range: –40°C to +125°C
- Small, Easy-to-Route DCK, and DBV Package
Applications
- USB 2.0
- Ethernet
- HDMI Control Lines
- MIPI Bus
- LVDS
- SATA
Pin Configuration
Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO = 10 μA | 5.5 | V | ||
| VCLAMP | Clamp voltage with ESD strike | IPP = 1 A, tp = 8/20 μs, from I/O to GND(1) | 11 | V | ||
| IPP = 3 A, tp = 8/20 μs, from I/O to GND(1) | 15 | V | ||||
| (1) Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC61000-4-5. |
(2) Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A.
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| IEC 61000-4-4 EFT protection (5/50 ns) | 80 | A | ||
| IPP | IEC 61000-4-5 surge protection (8/20 μs) peak pulse current | 3 | A | |
| PPP | IEC 61000-4-5 surge protection (8/20 μs) peak pulse power | 45 | W | |
| Operating temperature | -40 | 125 | °C | |
| Tstg | Storage temperature | -65 | 115 | °C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIO | Input pin voltage | 0 | 5.5 | V |
| TA | Operating free-air temperature | –40 | 125 | °C |
Thermal Information
| THERMAL METRIC(1) | TPD4E1U06 | |||
|---|---|---|---|---|
| DBV (SOT-23) | DCK (SC-70) | UNIT | ||
| 6 PINS | 6 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 224.3 | 274.3 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 166.1 | 113.8 | °C/W |
| RθJB | Junction-to-board thermal resistance | 68.4 | 76.7 | °C/W |
| ψJT | Junction-to-top characterization parameter | 57.3 | 3.6 | °C/W |
| ψJB | Junction-to-board characterization parameter | 67.9 | 75.9 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.6 Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO = 10 μA | 5.5 | V | ||
| VCLAMP | Clamp voltage with ESD strike | IPP = 1 A, tp = 8/20 μs, from I/O to GND(1) | 11 | V | ||
| IPP = 3 A, tp = 8/20 μs, from I/O to GND(1) | 15 | V | ||||
| (1) Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC61000-4-5. |
(2) Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| TPD4E1U06 | Texas Instruments | — |
| TPD4E1U06DBV | Texas Instruments | — |
| TPD4E1U06DCK | Texas Instruments | — |
| TPD4E1U06DCKR | Texas Instruments | 6-TSSOP, SC-88, SOT-363 |
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