TPD4E1U06DCKR
The TPD4E1U06DCKR is an electronic component from Texas Instruments. View the full TPD4E1U06DCKR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
Texas Instruments
Category
Circuit Protection
Package
6-TSSOP, SC-88, SOT-363
Lifecycle
Active
Key Specifications
| Parameter | Value |
|---|---|
| Applications | Ethernet, HDMI |
| Current - Peak Pulse (10/1000µs) | 3A (8/20µs) |
| Current - Peak Pulse (10/1000µs) | 3A (8/20µs) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Peak Pulse | 45W |
| Power - Peak Pulse | 45W |
| Power Line Protection | Yes |
| Power Line Protection | Yes |
| Supplier Device Package | SC-70-6 |
| Supplier Device Package | SC-70-6 |
| Type | Steering (Rail to Rail) |
| Type | Steering (Rail to Rail) |
| Unidirectional Channels | 4 |
| Unidirectional Channels | 4 |
| Voltage - Breakdown (Min) | 6.5V |
| Voltage - Breakdown (Min) | 6.5V |
| Voltage - Clamping (Max) @ Ipp | 15V (Typ) |
| Voltage - Clamping (Max) @ Ipp | 15V (Typ) |
| Voltage - Reverse Standoff (Typ) | 5.5V (Max) |
| Voltage - Reverse Standoff (Typ) | 5.5V (Max) |
Overview
Part: TPD4E1U06 — Texas Instruments
Type: Quad-Channel, High-Speed ESD Protection Device
Description: The TPD4E1U06 is a quad-channel unidirectional Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode with ultra low 0.8 pF capacitance, capable of dissipating ESD strikes above IEC 61000-4-2 Level 4 and supporting a 0 V to 5.5 V signal range.
Operating Conditions:
- Input pin voltage: 0–5.5 V
- Operating free-air temperature: -40 to 125 °C
Absolute Maximum Ratings:
- IEC 61000-4-4 EFT protection: 80 A (5/50 ns)
- IEC 61000-4-5 surge protection peak pulse current: 3 A (8/20 μs)
- IEC 61000-4-5 surge protection peak pulse power: 45 W (8/20 μs)
- Storage temperature: -65 to 115 °C
Key Specs:
- Reverse stand-off voltage (V RWM): 5.5 V (max, I IO = 10 μA)
- Clamp voltage with ESD strike (V CLAMP): 11 V (typ, I PP = 1 A, tp = 8/20 μs)
- Clamp voltage with ESD strike (V CLAMP): 15 V (typ, I PP = 3 A, tp = 8/20 μs)
- Dynamic resistance (R DYN): 1 Ω (typ, Pin x to GND)
- Line capacitance (C L): 0.8 pF (typ, f = 1 MHz, V BIAS = 2.5 V)
- Break-down voltage (V BR): 6.5 V (min, I IO = 1 mA)
- Leakage current (I LEAK): 10 nA (max, V IO = 2.5 V)
- ESD protection (IEC 61000-4-2): ±15 kV (contact and air-gap)
Features:
- IEC 61000-4-2 Level 4 ESD Protection (±15-kV Contact, ±15-kV Air-Gap)
- IEC 61000-4-4 EFT Protection (80 A, 5/50 ns)
- IEC 61000-4-5 Surge Protection (3 A, 8/20 μs)
- IO Capacitance 0.8 pF (Typical)
- DC Breakdown Voltage 6.5 V (Minimum)
- Ultra Low Leakage Current 10 nA (Maximum)
- Low ESD Clamping Voltage
- Industrial Temperature Range: -40°C to +125°C
- Small, Easy-to-Route DCK, and DBV Package
Applications:
- USB 2.0
- Ethernet
- HDMI Control Lines
- MIPI Bus
- LVDS
- SATA
Package:
- SC70 (2.00 mm × 1.25 mm)
- SOT-23 (2.90 mm × 1.60 mm)
Features
- 1 · IEC 61000-4-2 Level 4 ESD Protection
- -±15-kV Contact Discharge
- -±15-kV Air-Gap Discharge
- IEC 61000-4-4 EFT Protection
- -80 A (5/50 ns)
- IEC 61000-4-5 Surge Protection
- -3 A (8/20 μ s)
- IO Capacitance 0.8 pF (Typical)
- DC Breakdown Voltage 6.5 V (Minimum)
- Ultra Low Leakage Current 10 nA (Maximum)
- Low ESD Clamping Voltage
- Industrial Temperature Range: -40°C to +125°C
- Small, Easy-to-Route DCK, and DBV Package
Applications
- USB 2.0
- Ethernet
- HDMI Control Lines
- MIPI Bus
- LVDS
- SATA
Pin Configuration
Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
| PARAMETER | PARAMETER | TEST CONDITIONS | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|---|
| V RWM | Reverse stand-off voltage | I IO = 10 μA | I IO = 10 μA | 5.5 | V | ||
| V CLAMP | Clamp voltage with ESD strike | I PP = 1 A, tp = 8/20 μ s, from I/O to GND (1) | I PP = 1 A, tp = 8/20 μ s, from I/O to GND (1) | 11 | V | ||
| V CLAMP | Clamp voltage with ESD strike | I PP = 3 A, tp = 8/20 μ s, from I/O to GND (1) | I PP = 3 A, tp = 8/20 μ s, from I/O to GND (1) | 15 | V | ||
| R DYN | Dynamic resistance | Pin x to GND pin (2) | Pin x to GND pin (2) | 1 | Ω | ||
| R DYN | Dynamic resistance | GND to pin x | GND to pin x | 0.6 | Ω | ||
| C L | Line capacitance | f = 1 MHz, V BIAS = 2.5 V, 25°C | f = 1 MHz, V BIAS = 2.5 V, 25°C | 0.8 | 1 | pF | |
| C CROSS | Channel to channel input capacitance | Pin 2 = 0 V, f = 1 MHz, V BIAS = 2.5 V, between channel pins | DCK package | 0.006 | 0.015 | pF | |
| C CROSS | Channel to channel input capacitance | Pin 2 = 0 V, f = 1 MHz, V BIAS = 2.5 V, between channel pins | DBV package | 0.01 | 0.025 | pF | |
| ∆ C IO-TO-GND | Variation of channel input capacitance | Pin 2 = 0 V , f = 1 MHz, V BIAS = 2.5 V, channel_x pin to ground - channel_y pin to ground | Pin 2 = 0 V , f = 1 MHz, V BIAS = 2.5 V, channel_x pin to ground - channel_y pin to ground | 0.025 | 0.07 | pF | |
| V BR | Break-down voltage, IO to GND | I IO = 1 mA | I IO = 1 mA | 6.5 | 8.5 | V | |
| I LEAK | Leakage current | V IO = 2.5 V | V IO = 2.5 V | 1 | 10 | nA |
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| IEC 61000-4-4 EFT protection (5/50 ns) | 80 | A | ||
| I PP | IEC 61000-4-5 surge protection (8/20 μ s) peak pulse current | 3 | A | |
| P PP | IEC 61000-4-5 surge protection (8/20 μ s) peak pulse power | 45 | W | |
| Operating temperature | -40 | 125 | °C | |
| T stg | Storage temperature | -65 | 115 | °C |
Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| V IO | Input pin voltage | 0 | 5.5 | V |
| T A | Operating free-air temperature | -40 | 125 | °C |
Thermal Information
| TPD4E1U06 | TPD4E1U06 | ||
|---|---|---|---|
| THERMAL METRIC | (1) | DBV (SOT-23) | DCK (SC-70) |
| 6 PINS | 6 PINS | ||
| R θ JA | Junction-to-ambient thermal resistance | 224.3 | 274.3 |
| R θ JC(top) | Junction-to-case (top) thermal resistance | 166.1 | 113.8 |
| R θ JB | Junction-to-board thermal resistance | 68.4 | 76.7 |
| ψ JT | Junction-to-top characterization parameter | 57.3 | 3.6 |
| ψ JB | Junction-to-board characterization parameter | 67.9 | 75.9 |
Typical Application
The TPD4E1U06 is a TVS diode array which is typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| TPD4E1U06 | Texas Instruments | — |
| TPD4E1U06DBV | Texas Instruments | SOT-23 |
| TPD4E1U06DBVR | Texas Instruments | — |
| TPD4E1U06DCK | Texas Instruments | — |
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