TPD4E1U06DCKR

TPD4E1U06 Quad-Channel, High-Speed ESD Protection Device

Manufacturer

Texas Instruments

Category

Circuit Protection

Package

6-TSSOP, SC-88, SOT-363

Lifecycle

Active

Overview

Part: TPD4E1U06 from Texas Instruments

Type: Quad-Channel ESD Protection Device

Key Specs:

  • IEC 61000-4-2 Contact Discharge: ±15-kV
  • IEC 61000-4-2 Air-Gap Discharge: ±15-kV
  • IEC 61000-4-4 EFT Protection: 80 A (5/50 ns)
  • IEC 61000-4-5 Surge Protection: 3 A (8/20 μs)
  • IO Capacitance: 0.8 pF (Typical)
  • DC Breakdown Voltage: 6.5 V (Minimum)
  • Leakage Current: 10 nA (Maximum)
  • Industrial Temperature Range: –40°C to +125°C

Features:

  • IEC 61000-4-2 Level 4 ESD Protection
  • IEC 61000-4-4 EFT Protection
  • IEC 61000-4-5 Surge Protection
  • Ultra Low Leakage Current
  • Low ESD Clamping Voltage
  • Industrial Temperature Range: –40°C to +125°C
  • Small, Easy-to-Route DCK, and DBV Package
  • Quad-channel unidirectional Transient Voltage Suppressor (TVS)
  • Ultra low capacitance

Applications:

  • USB 2.0
  • Ethernet
  • HDMI Control Lines
  • MIPI Bus
  • LVDS
  • SATA
  • MHL
  • DisplayPort

Package:

  • DCK (SC70): 2.00 mm × 1.25 mm
  • DBV (SOT-23): 2.90 mm × 1.60 mm

Features

  • 1• IEC 61000-4-2 Level 4 ESD Protection
    • ±15-kV Contact Discharge
    • ±15-kV Air-Gap Discharge
  • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns)
  • IEC 61000-4-5 Surge Protection – 3 A (8/20 μs)
  • IO Capacitance 0.8 pF (Typical)
  • DC Breakdown Voltage 6.5 V (Minimum)
  • Ultra Low Leakage Current 10 nA (Maximum)
  • Low ESD Clamping Voltage
  • • Industrial Temperature Range: –40°C to +125°C
  • Small, Easy-to-Route DCK, and DBV Package

Applications

  • USB 2.0
  • Ethernet
  • HDMI Control Lines
  • MIPI Bus
  • LVDS
  • SATA

Pin Configuration

Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VRWMReverse stand-off voltageIIO = 10 μA5.5V
VCLAMPClamp voltage with ESD strikeIPP = 1 A, tp = 8/20 μs, from I/O to GND(1)11V
IPP = 3 A, tp = 8/20 μs, from I/O to GND(1)15V
(1) Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC61000-4-5.

(2) Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A.

TPD4E1U06

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MINMAXUNIT
IEC 61000-4-4 EFT protection (5/50 ns)80A
IPPIEC 61000-4-5 surge protection (8/20 μs) peak pulse current3A
PPPIEC 61000-4-5 surge protection (8/20 μs) peak pulse power45W
Operating temperature-40125°C
TstgStorage temperature-65115°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MINMAXUNIT
VIOInput pin voltage05.5V
TAOperating free-air temperature–40125°C

Thermal Information

THERMAL METRIC(1)TPD4E1U06
DBV (SOT-23)DCK (SC-70)UNIT
6 PINS6 PINS
RθJAJunction-to-ambient thermal resistance224.3274.3°C/W
RθJC(top)Junction-to-case (top) thermal resistance166.1113.8°C/W
RθJBJunction-to-board thermal resistance68.476.7°C/W
ψJTJunction-to-top characterization parameter57.33.6°C/W
ψJBJunction-to-board characterization parameter67.975.9°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.6 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VRWMReverse stand-off voltageIIO = 10 μA5.5V
VCLAMPClamp voltage with ESD strikeIPP = 1 A, tp = 8/20 μs, from I/O to GND(1)11V
IPP = 3 A, tp = 8/20 μs, from I/O to GND(1)15V
(1) Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC61000-4-5.

(2) Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A.

TPD4E1U06

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
TPD4E1U06Texas Instruments
TPD4E1U06DBVTexas Instruments
TPD4E1U06DBVRTexas Instruments
TPD4E1U06DCKTexas Instruments
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