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TPD4E1U06DCKR

Quad-Channel ESD Protection TVS Array

The TPD4E1U06DCKR is a quad-channel esd protection tvs array from Texas Instruments. View the full TPD4E1U06DCKR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

TPD4E1U06DCKR shares its datasheet with TPD4E1U06, whose page lists every part number it covers.

Official TPD4E1U06DCKR datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

Category

Diodes

Package

SC70-6

Lifecycle

Active

TPD4E1U06DCKR Key Specifications

ParameterValue
ApplicationsEthernet, HDMI
Current - Peak Pulse (10/1000µs)3A (8/20µs)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TA)
Package / Case6-TSSOP, SC-88, SOT-363
Power - Peak Pulse45W
Power Line ProtectionYes
Supplier Device PackageSC-70-6
TypeSteering (Rail to Rail)
Unidirectional Channels4
Voltage - Breakdown (Min)6.5V
Voltage - Clamping (Max) @ Ipp15V (Typ)
Voltage - Reverse Standoff (Typ)5.5V (Max)

TPD4E1U06DCKR Overview

Part: TPD4E1U06 (TPD4E1U06DCK / TPD4E1U06DBV) — Texas Instruments

Type: Quad-Channel Unidirectional TVS ESD Protection Diode Array

Description: Quad-channel, high-speed ESD protection device with 0.8 pF typical line capacitance, 5.5 V reverse stand-off voltage, and IEC 61000-4-2 Level 4 protection (±15 kV contact and air-gap).

Operating Conditions:

  • Supply voltage: not applicable (passive device; I/O pin voltage 0 to 5.5 V)
  • Operating temperature: -40 to 125 °C
  • Reverse stand-off voltage (VRWM): 5.5 V max at IIO = 10 μA

Absolute Maximum Ratings:

  • IEC 61000-4-4 EFT protection (5/50 ns): 80 A
  • IEC 61000-4-5 peak pulse current (8/20 μs): 3 A
  • IEC 61000-4-5 peak pulse power (8/20 μs): 45 W
  • Operating temperature: -40 to 125 °C
  • Storage temperature: -65 to 115 °C

Key Specs:

  • Breakdown voltage (VBR, IO to GND): 6.5 V min, 8.5 V max at IIO = 1 mA
  • Leakage current (ILEAK): 1 nA typ, 10 nA max at VIO = 2.5 V
  • Line capacitance (CL): 0.8 pF typ, 1 pF max at f = 1 MHz, VBIAS = 2.5 V, 25 °C
  • Channel-to-channel capacitance: 0.006 pF typ / 0.015 pF max (DCK); 0.01 pF typ / 0.025 pF max (DBV)
  • Clamp voltage (8/20 μs, I/O to GND): 11 V typ at IPP = 1 A; 15 V typ at IPP = 3 A
  • Dynamic resistance: 1.0 Ω typ (pin to GND); 0.6 Ω typ (GND to pin)
  • Capacitance variation between channels (ΔCIO-TO-GND): 0.025 pF typ, 0.07 pF max
  • ESD ratings: HBM ±4000 V, CDM ±1500 V; IEC 61000-4-2 contact and air-gap ±15000 V

Features:

  • IEC 61000-4-2 Level 4 ESD protection (±15 kV contact and air-gap)
  • IEC 61000-4-4 EFT protection (80 A, 5/50 ns)
  • IEC 61000-4-5 surge protection (3 A, 8/20 μs)
  • Ultra-low leakage current (10 nA max)
  • Low ESD clamping voltage
  • Industrial temperature range of -40 to +125 °C
  • Small, easy-to-route packages

Applications:

  • USB 2.0
  • Ethernet
  • HDMI control lines
  • MIPI bus
  • LVDS
  • SATA

Package:

  • SC70 (DCK), 6 pins, 2.00 mm × 1.25 mm
  • SOT-23 (DBV), 6 pins, 2.90 mm × 1.60 mm

TPD4E1U06DCKR Features

  • 1 · IEC 61000-4-2 Level 4 ESD Protection
  • -±15-kV Contact Discharge
  • -±15-kV Air-Gap Discharge
  • IEC 61000-4-4 EFT Protection
  • -80 A (5/50 ns)
  • IEC 61000-4-5 Surge Protection -3 A (8/20 μ s)
  • IO Capacitance 0.8 pF (Typical)
  • DC Breakdown Voltage 6.5 V (Minimum)
  • Ultra Low Leakage Current 10 nA (Maximum)
  • Low ESD Clamping Voltage
  • Industrial Temperature Range: -40°C to +125°C
  • Small, Easy-to-Route DCK, and DBV Package

TPD4E1U06DCKR Applications

  • USB 2.0
  • Ethernet
  • HDMI Control Lines
  • MIPI Bus
  • LVDS
  • SATA

1

TPD4E1U06DCKR Pin Configuration

TPD4E1U06DCKR Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETERPARAMETERTEST CONDITIONSTEST CONDITIONSMINTYPMAXUNIT
V RWMReverse stand-off voltageI IO = 10 μAI IO = 10 μA5.5V
V CLAMPClamp voltage with ESD strikeI PP = 1 A, tp = 8/20 μ s, from I/O to GND (1)I PP = 1 A, tp = 8/20 μ s, from I/O to GND (1)11V
V CLAMPClamp voltage with ESD strikeI PP = 3 A, tp = 8/20 μ s, from I/O to GND (1)I PP = 3 A, tp = 8/20 μ s, from I/O to GND (1)15V
R DYNDynamic resistancePin x to GND pin (2)Pin x to GND pin (2)1.0Ω
R DYNDynamic resistanceGND to pin xGND to pin x0.6Ω
C LLine capacitancef = 1 MHz, V BIAS = 2.5 V, 25°Cf = 1 MHz, V BIAS = 2.5 V, 25°C0.81pF
C CROSSChannel to channel input capacitancePin 2 = 0 V, f = 1 MHz, V BIAS = 2.5 V, between channel pinsDCK package0.0060.015pF
C CROSSChannel to channel input capacitancePin 2 = 0 V, f = 1 MHz, V BIAS = 2.5 V, between channel pinsDBV package0.010.025pF
∆ C IO-TO-GNDVariation of channel input capacitancePin 2 = 0 V , f = 1 MHz, V BIAS = 2.5 V, channel_x pin to ground - channel_y pin to groundPin 2 = 0 V , f = 1 MHz, V BIAS = 2.5 V, channel_x pin to ground - channel_y pin to ground0.0250.07pF
V BRBreak-down voltage, IO to GNDI IO = 1 mAI IO = 1 mA6.58.5V
I LEAKLeakage currentV IO = 2.5 VV IO = 2.5 V110nA

TPD4E1U06DCKR Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MINMAXUNIT
IEC 61000-4-4 EFT protection (5/50 ns)80A
I PPIEC 61000-4-5 surge protection (8/20 μ s) peak pulse current3A
P PPIEC 61000-4-5 surge protection (8/20 μ s) peak pulse power45W
Operating temperature-40125°C
T stgStorage temperature-65115°C

over operating free-air temperature range (unless otherwise noted)

MINMAXUNIT
V IOInput pin voltage05.5V
T AOperating free-air temperature-40125°C

TPD4E1U06DCKR Thermal Information

THERMAL METRIC(1)TPD4E1U06 - DBV (SOT-23) - 6 PINSTPD4E1U06 - DCK (SC-70) - 6 PINSUNIT
R θ JAJunction-to-ambient thermal resistance224.3274.3°C/W
R θ JC(top)Junction-to-case (top) thermal resistance166.1113.8°C/W
R θ JBJunction-to-board thermal resistance68.476.7°C/W
ψ JTJunction-to-top characterization parameter57.33.6°C/W
ψ JBJunction-to-board characterization parameter67.975.9°C/W

TPD4E1U06DCKR Typical Application

The TPD4E1U06 is a TVS diode array which is typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
TPD4E1U06Texas Instruments—
TPD4E1U06DBVTexas InstrumentsSOT-23
TPD4E1U06DBVRTexas InstrumentsSOT-23-6
TPD4E1U06DCKTexas InstrumentsSC70-6

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)

All Diodes datasheetsAll Texas Instruments datasheets (2,442)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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