TPD4E1U06

The TPD4E1U06 is an electronic component from Texas Instruments. View the full TPD4E1U06 datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Overview

Part: TPD4E1U06 — Texas Instruments

Type: Quad-Channel, High-Speed ESD Protection Device

Description: The TPD4E1U06 is a quad-channel unidirectional Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode with ultra low 0.8 pF capacitance, capable of dissipating ESD strikes above IEC 61000-4-2 Level 4 and supporting a 0 V to 5.5 V signal range.

Operating Conditions:

Input pin voltage: 0–5.5 V
Operating free-air temperature: -40 to 125 °C

Absolute Maximum Ratings:

IEC 61000-4-4 EFT protection: 80 A (5/50 ns)
IEC 61000-4-5 surge protection peak pulse current: 3 A (8/20 μs)
IEC 61000-4-5 surge protection peak pulse power: 45 W (8/20 μs)
Storage temperature: -65 to 115 °C

Key Specs:

Reverse stand-off voltage (V RWM): 5.5 V (max, I IO = 10 μA)
Clamp voltage with ESD strike (V CLAMP): 11 V (typ, I PP = 1 A, tp = 8/20 μs)
Clamp voltage with ESD strike (V CLAMP): 15 V (typ, I PP = 3 A, tp = 8/20 μs)
Dynamic resistance (R DYN): 1 Ω (typ, Pin x to GND)
Line capacitance (C L): 0.8 pF (typ, f = 1 MHz, V BIAS = 2.5 V)
Break-down voltage (V BR): 6.5 V (min, I IO = 1 mA)
Leakage current (I LEAK): 10 nA (max, V IO = 2.5 V)
ESD protection (IEC 61000-4-2): ±15 kV (contact and air-gap)

Features:

IEC 61000-4-2 Level 4 ESD Protection (±15-kV Contact, ±15-kV Air-Gap)
IEC 61000-4-4 EFT Protection (80 A, 5/50 ns)
IEC 61000-4-5 Surge Protection (3 A, 8/20 μs)
IO Capacitance 0.8 pF (Typical)
DC Breakdown Voltage 6.5 V (Minimum)
Ultra Low Leakage Current 10 nA (Maximum)
Low ESD Clamping Voltage
Industrial Temperature Range: -40°C to +125°C
Small, Easy-to-Route DCK, and DBV Package

Applications:

USB 2.0
Ethernet
HDMI Control Lines
MIPI Bus
LVDS
SATA

Package:

SC70 (2.00 mm × 1.25 mm)
SOT-23 (2.90 mm × 1.60 mm)

Features

1 · IEC 61000-4-2 Level 4 ESD Protection
-±15-kV Contact Discharge
-±15-kV Air-Gap Discharge
IEC 61000-4-4 EFT Protection
-80 A (5/50 ns)
IEC 61000-4-5 Surge Protection
-3 A (8/20 μ s)
IO Capacitance 0.8 pF (Typical)
DC Breakdown Voltage 6.5 V (Minimum)
Ultra Low Leakage Current 10 nA (Maximum)
Low ESD Clamping Voltage
Industrial Temperature Range: -40°C to +125°C
Small, Easy-to-Route DCK, and DBV Package

Applications

USB 2.0
Ethernet
HDMI Control Lines
MIPI Bus
LVDS
SATA

Pin Configuration

Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETER	PARAMETER	TEST CONDITIONS	TEST CONDITIONS	MIN	TYP	MAX	UNIT
V RWM	Reverse stand-off voltage	I IO = 10 μA	I IO = 10 μA			5.5	V
V CLAMP	Clamp voltage with ESD strike	I PP = 1 A, tp = 8/20 μ s, from I/O to GND (1)	I PP = 1 A, tp = 8/20 μ s, from I/O to GND (1)		11		V
V CLAMP	Clamp voltage with ESD strike	I PP = 3 A, tp = 8/20 μ s, from I/O to GND (1)	I PP = 3 A, tp = 8/20 μ s, from I/O to GND (1)		15		V
R DYN	Dynamic resistance	Pin x to GND pin (2)	Pin x to GND pin (2)		1		Ω
R DYN	Dynamic resistance	GND to pin x	GND to pin x		0.6		Ω
C L	Line capacitance	f = 1 MHz, V BIAS = 2.5 V, 25°C	f = 1 MHz, V BIAS = 2.5 V, 25°C		0.8	1	pF
C CROSS	Channel to channel input capacitance	Pin 2 = 0 V, f = 1 MHz, V BIAS = 2.5 V, between channel pins	DCK package		0.006	0.015	pF
C CROSS	Channel to channel input capacitance	Pin 2 = 0 V, f = 1 MHz, V BIAS = 2.5 V, between channel pins	DBV package		0.01	0.025	pF
∆ C IO-TO-GND	Variation of channel input capacitance	Pin 2 = 0 V , f = 1 MHz, V BIAS = 2.5 V, channel_x pin to ground - channel_y pin to ground	Pin 2 = 0 V , f = 1 MHz, V BIAS = 2.5 V, channel_x pin to ground - channel_y pin to ground		0.025	0.07	pF
V BR	Break-down voltage, IO to GND	I IO = 1 mA	I IO = 1 mA	6.5		8.5	V
I LEAK	Leakage current	V IO = 2.5 V	V IO = 2.5 V		1	10	nA

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

		MIN	MAX	UNIT
	IEC 61000-4-4 EFT protection (5/50 ns)		80	A
I PP	IEC 61000-4-5 surge protection (8/20 μ s) peak pulse current		3	A
P PP	IEC 61000-4-5 surge protection (8/20 μ s) peak pulse power		45	W
	Operating temperature	-40	125	°C
T stg	Storage temperature	-65	115	°C

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V IO	Input pin voltage	0	5.5	V
T A	Operating free-air temperature	-40	125	°C

Thermal Information

		TPD4E1U06	TPD4E1U06
THERMAL METRIC	(1)	DBV (SOT-23)	DCK (SC-70)
		6 PINS	6 PINS
R θ JA	Junction-to-ambient thermal resistance	224.3	274.3
R θ JC(top)	Junction-to-case (top) thermal resistance	166.1	113.8
R θ JB	Junction-to-board thermal resistance	68.4	76.7
ψ JT	Junction-to-top characterization parameter	57.3	3.6
ψ JB	Junction-to-board characterization parameter	67.9	75.9

Typical Application

The TPD4E1U06 is a TVS diode array which is typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
TPD4E1U06DBV	Texas Instruments	SOT-23
TPD4E1U06DBVR	Texas Instruments	—
TPD4E1U06DCK	Texas Instruments	—
TPD4E1U06DCKR	Texas Instruments	6-TSSOP, SC-88, SOT-363

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