TIP120/121/122

Part: TIP120/121/122 TIP125/126/127 — STMicroelectronics

Type: Complementary Silicon Power Darlington Transistors

Description: Silicon Epitaxial-Base NPN and complementary PNP power transistors in monolithic Darlington configuration, intended for use in power linear and switching applications.

Operating Conditions:

• Operating junction temperature: Up to 150 °C

Absolute Maximum Ratings:

• Collector-Base Voltage (V_CBO): 100 V (for TIP122/127)
• Collector-Emitter Voltage (V_CEO): 100 V (for TIP122/127)
• Collector Current (I_C): 5 A
• Collector Peak Current (I_CM): 8 A
• Total Dissipation (P_tot): 65 W (at T_case ≤ 25 °C)
• Storage temperature: -65 to 150 °C

Key Specs:

• Collector-Emitter Sustaining Voltage (V_CEO(sus)): 100 V (min, for TIP122/127 at I_C = 30 mA)
• Collector-Emitter Saturation Voltage (V_CE(sat)): 2 V (max, at I_C = 3 A, I_B = 12 mA)
• Base-Emitter Voltage (V_BE(on)): 2.5 V (max, at I_C = 3 A, V_CE = 3 V)
• DC Current Gain (h_FE): 1000 (min, at I_C = 0.5 A, V_CE = 3 V)
• DC Current Gain (h_FE): 1000 (min, at I_C = 3 A, V_CE = 3 V)
• Collector Cut-off Current (I_CEO): 0.5 mA (max, for TIP122/127 at V_CE = 50 V)
• Thermal Resistance Junction-case (R_thj-case): 1.92 °C/W (max)

Features:

• NPN and complementary PNP types (TIP120/121/122 and TIP125/126/127)
• Monolithic Darlington configuration
• Silicon Epitaxial-Base

Applications:

• Power linear applications
• Switching applications

Package:

• TO-220 plastic package