TIP120
Darlington TransistorThe TIP120 is a darlington transistor from STMicroelectronics. View the full TIP120 datasheet below including key specifications, electrical characteristics.
Official TIP120 datasheet (PDF) — the source this page was extracted from.
TIP120 Key Specifications
| Parameter | Value |
|---|---|
| Polarity | NPN |
| Base Current (IB) | 0.12A |
| Storage Temperature | -65°C to 150°C |
| DC Current Gain (HFE) | 1000 min at IC=0.5A and 3A, VCE=3V |
| Collector Current (IC) | 5A |
| Emitter-Base Voltage (VEBO) | 5V |
| Collector Peak Current (ICM) | 8A |
| Collector-Base Voltage (VCBO) | 60V |
| Collector-Emitter Voltage (VCEO) | 60V |
| Thermal Resistance Junction-Case | 1.92 °C/W max |
| Total Dissipation (Tc ≤ 25°C) | 65W |
| Base-Emitter On Voltage (VBE(On)) | 2.5V max at IC=3A, VCE=3V |
| Thermal Resistance Junction-Ambient | 62.5 °C/W max |
| Operating Junction Temperature (Max) | 150°C |
| Collector-Emitter Saturation Voltage (VCE(Sat)) | 2V max at IC=3A, IB=12mA; 4V max at IC=5A, IB=20mA |
| Collector-Emitter Sustaining Voltage (VCEO(Sus)) | 60V min at IC=30mA |
TIP120 Overview
Part: TIP120, TIP121, TIP122, TIP125, TIP126, TIP127 — STMicroelectronics
Type: Complementary power Darlington transistors
Description: Complementary NPN-PNP Darlington transistors with low collector-emitter saturation voltage and high gain, manufactured in planar technology for general purpose linear and switching applications.
Operating Conditions:
- Operating temperature: -65 to 150 °C
- Max collector current: 5 A
- Max collector-emitter voltage: 100 V
Absolute Maximum Ratings:
- Max supply voltage: 100 V (V_CEO for TIP122/127)
- Max continuous current: 5 A (Collector current I_C)
- Max junction temperature: 150 °C
Key Specs:
- Collector-emitter sustaining voltage (V_CEO(sus)): 60 V (min) for TIP120/125, 80 V (min) for TIP121/126, 100 V (min) for TIP122/127 (I_C = 30 mA)
- Collector-emitter saturation voltage (V_CE(sat)): 2 V (max) at I_C = 3 A, I_B = 12 mA
- Collector-emitter saturation voltage (V_CE(sat)): 4 V (max) at I_C = 5 A, I_B = 20 mA
- Base-emitter on voltage (V_BE(on)): 2.5 V (max) at I_C = 3 A, V_CE = 3 V
- DC current gain (h_FE): 1000 (min) at I_C = 0.5 A, V_CE = 3 V
- DC current gain (h_FE): 1000 (min) at I_C = 3 A, V_CE = 3 V
- Collector cut-off current (I_CEO): 0.5 mA (max) at V_CE = 50 V (for TIP122/127)
- Emitter cut-off current (I_EBO): 2 mA (max) at V_EB = 5 V
Features:
- Low collector-emitter saturation voltage
- Complementary NPN - PNP transistors
Applications:
- General purpose linear and switching
Package:
- TO-220
TIP120 Features
- ■ Low collector-emitter saturation voltage
- ■ Complementary NPN - PNP transistors
TIP120 Electrical Characteristics
(T case = 25 °C ; unless otherwise specified)
Table 4. Electrical characteristics (1)
| Symbol | Parameter | Test conditions | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|---|
| I CEO | Collector cut-off current (I B = 0) | for TIP120/125 for TIP121/126 for TIP122/127 | V CE = 30 V V CE = 40 V V CE = 50 V | 0.5 0.5 0.5 | mA mA mA | ||
| I CBO | Collector cut-off current (I B = 0) | for TIP120/125 for TIP121/126 for TIP122/127 | V CE = 60 V V CE = 80 V V CE = 100 V | 0.2 0.2 0.2 | mA mA mA | ||
| I EBO | Emitter cut-off current (I C = 0) | V EB = 5 V | 2 | mA | |||
| V CEO(sus) (2) | Collector-emitter sustaining voltage (I B = 0) | I C = 30 mA for TIP120/125 for TIP121/126 for TIP122/127 | 60 80 100 | V V V | |||
| V CE(sat) (2) | Collector-emitter saturation voltage | I C = 3 A I C = 5 A | I B = 12 mA I B = 20 mA | 2 4 | V V | ||
| V BE(on) (2) | Base-emitter on voltage | I C = 3 A | V CE = 3 V | 2.5 | V | ||
| h FE (2) | DC current gain | I C = 0.5 A I C = 3 A | V CE = 3 V V CE = 3 V | 1000 1000 |
TIP120 Thermal Information
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| R thj-case | Thermal resistance junction-case max. | 1.92 | °C/W |
| R thj-amb | Thermal resistance junction-ambient max. | 62.5 | °C/W |
TIP120 Package Information
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| TIP120/125 | STMicroelectronics | TO-220 |
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- 2N4922G – onsemi, Medium-Power NPN Silicon Transistor
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