TIP120/125

Power Darlington Transistor

The TIP120/125 is a power darlington transistor from STMicroelectronics. View the full TIP120/125 datasheet below including key specifications, electrical characteristics.

Manufacturer

STMicroelectronics

Key Specifications

Parameter	Value
Storage Temperature	-65 °C to 150 °C
DC Current Gain (HFE)	1000 (min, at IC=0.5A or 3A)
Collector Current (IC)	5 A
Collector Peak Current (ICM)	8 A
Operating Junction Temperature	150 °C
Total Power Dissipation (PTOT)	65 W (at Tc <= 25 °C)
Collector-Emitter Voltage (VCEO)	60 V
Collector-Emitter Saturation Voltage (VCEsat)	2 V (max, at IC=3A, IB=12mA)

Overview

Part: TIP120, TIP121, TIP122, TIP125, TIP126, TIP127 — STMicroelectronics

Type: Complementary Power Darlington Transistors

Description: Complementary NPN-PNP power Darlington transistors manufactured in planar technology, offering exceptional high gain performance coupled with very low saturation voltage, suitable for general purpose linear and switching applications.

Operating Conditions:

Max collector-emitter voltage: 100 V (for TIP122/127)
Operating junction temperature: -40 to 150 °C
Max collector current: 5 A

Absolute Maximum Ratings:

Max collector-base voltage (V_CBO): 100 V (for TIP122/127)
Max collector-emitter voltage (V_CEO): 100 V (for TIP122/127)
Max continuous collector current (I_C): 5 A
Max junction temperature (T_J): 150 °C

Key Specs:

Collector-emitter sustaining voltage (V_CEO(sus)): 60 V (min, for TIP120/125 at I_C = 30 mA)
Collector-emitter sustaining voltage (V_CEO(sus)): 100 V (min, for TIP122/127 at I_C = 30 mA)
Collector-emitter saturation voltage (V_CE(sat)): 2 V (max, at I_C = 3 A, I_B = 12 mA)
Collector-emitter saturation voltage (V_CE(sat)): 4 V (max, at I_C = 5 A, I_B = 20 mA)
Base-emitter on voltage (V_BE(on)): 2.5 V (max, at I_C = 3 A, V_CE = 3 V)
DC current gain (h_FE): 1000 (min, at I_C = 0.5 A, V_CE = 3 V)
DC current gain (h_FE): 1000 (min, at I_C = 3 A, V_CE = 3 V)
Thermal resistance junction-case (R_thj-case): 1.92 °C/W (max)

Features:

Low collector-emitter saturation voltage
Complementary NPN - PNP transistors

Applications:

General purpose linear and switching

Package:

TO-220

Features

■ Low collector-emitter saturation voltage
■ Complementary NPN - PNP transistors

Electrical Characteristics

(T case = 25 °C ; unless otherwise specified)

Table 4. Electrical characteristics (1)

Symbol	Parameter	Test conditions	Test conditions	Min.	Max.	Unit
I CEO	Collector cut-off current (I B = 0)	for TIP120/125 for TIP121/126 for TIP122/127	V CE = 30 V V CE = 40 V V CE = 50 V		0.5 0.5 0.5	mA mA mA
I CBO	Collector cut-off current (I B = 0)	for TIP120/125 for TIP121/126 for TIP122/127	V CE = 60 V V CE = 80 V V CE = 100 V		0.2 0.2 0.2	mA mA mA
I EBO	Emitter cut-off current (I C = 0)	V EB = 5 V			2	mA
V CEO(sus) (2)	Collector-emitter sustaining voltage (I B = 0)	I C = 30 mA for TIP120/125 for TIP121/126 for TIP122/127		60 80 100		V V V
V CE(sat) (2)	Collector-emitter saturation voltage	I C = 3 A I C = 5 A	I B = 12 mA I B = 20 mA		2 4	V V
V BE(on) (2)	Base-emitter on voltage	I C = 3 A	V CE = 3 V		2.5	V
h FE (2)	DC current gain	I C = 0.5 A I C = 3 A	V CE = 3 V V CE = 3 V	1000 1000

Thermal Information

Symbol	Parameter	Value	Unit
R thj-case	Thermal resistance junction-case max.	1.92	°C/W
R thj-amb	Thermal resistance junction-ambient max.	62.5	°C/W

Package Information

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
TIP120	STMicroelectronics	—

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