BSC093N04LS

Part: BSC093N04LS G — Infineon Technologies

Type: N-channel Logic Level Power MOSFET (OptiMOS™3)

Description: 40 V N-channel logic-level MOSFET with 9.3 mΩ max RDS(on) at VGS = 10 V and 49 A continuous drain current, in a PG-TDSON-8 package.

Operating Conditions:

• Supply voltage: not applicable (VDS rated 40 V; VGS ±20 V)
• Operating temperature: -55 to 150 °C (Tj, Tstg)
• Logic-level gate drive: RDS(on) specified at VGS = 4.5 V and 10 V

Absolute Maximum Ratings:

• Drain-source voltage: 40 V (Product Summary VDS; V(BR)DSS min 40 V)
• Gate-source voltage: ±20 V
• Continuous drain current: 49 A (VGS = 10 V, TC = 25 °C); 13 A (TA = 25 °C, RthJA = 50 K/W)
• Pulsed drain current: 196 A (TC = 25 °C)
• Power dissipation: 35 W (TC = 25 °C); 2.5 W (TA = 25 °C, RthJA = 50 K/W)
• Avalanche energy, single pulse: 10 mJ (ID = 40 A, RGS = 25 Ω)
• Operating and storage temperature: -55 to 150 °C

Key Specs:

• RDS(on): 7.8 mΩ typ / 9.3 mΩ max (VGS = 10 V, ID = 40 A); 11.0 mΩ typ / 13.7 mΩ max (VGS = 4.5 V, ID = 20 A)
• Gate threshold voltage VGS(th): 1.2–2 V (VDS = VGS, ID = 14 μA)
• Total gate charge Qg: 18 nC typ / 24 nC max (VGS = 0 to 10 V, VDD = 20 V, ID = 30 A); 8.6 nC typ (VGS = 0 to 4.5 V)
• Qgd: 2.0 nC typ; Qsw: 4.6 nC typ
• Ciss: 1400 pF typ / 1900 pF max; Coss: 340 pF typ (VDS = 20 V, f = 1 MHz)
• Switching: td(on) 3.6 ns, tr 2.4 ns, td(off) 16 ns, tf 2.8 ns typ (VDD = 20 V, VGS = 10 V, ID = 30 A, RG,ext = 1.6 Ω)
• IDSS: 0.1 μA typ / 1 μA max (VDS = 40 V, Tj = 25 °C)
• Thermal resistance: RthJC 3.6 K/W max (bottom); RthJA 50 K/W max (6 cm² cooling area)
• Body diode: VSD 0.9 V typ / 1.2 V max (IF = 40 A); IS 29 A continuous

Features:

• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC for target applications
• N-channel, logic level
• Excellent gate charge × RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21

Applications:

• Switch-mode power supplies (SMPS)
• DC/DC converters

Package:

• PG-TDSON-8 (marking 093N04LS)

• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC 1) for target applications
• N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21

Type	Package	Marking
BSC093N04LS G	PG-TDSON-8	093N04LS

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I D	V GS =10 V, T C =25 °C V GS =10 V, T C =100 °C V GS =4.5 V, T C =25 °C V GS =4.5 V, T C =100 °C V GS =10 V, T A =25 °C, R thJA =50 K/W 2)	49 31 40 26 13	A
Pulsed drain current 3)	I D,pulse	T C =25 °C	196
Avalanche current, single pulse 4)	I AS	T C =25 °C	40
Avalanche energy, single pulse	E AS	I D =40 A, R GS =25 W	10	mJ
Gate source voltage	V GS		±20	V

Parameter	Symbol	Conditions	Value	Value	Value	Unit
Power dissipation	P tot	T C =25 °C	35	35	35	W
		T A =25 °C, R thJA =50 K/W 2)	2.5	2.5	2.5
Operating and storage temperature	T j , T stg		-55 ... 150	-55 ... 150	-55 ... 150	°C
IEC climatic category; DIN IEC 68-1			55/150/56	55/150/56	55/150/56
Parameter	Symbol	Conditions	Values min.	Values typ.	Values max.	Unit
Thermal characteristics	Thermal characteristics	Thermal characteristics	Thermal characteristics	Thermal characteristics	Thermal characteristics	Thermal characteristics
Thermal resistance, junction - case	R thJC	bottom top	-	-	3.6 20	K/W
Device on PCB	R thJA	6 cm 2 cooling area 2)	-	-	50
Electrical characteristics, at T j =25 °C, unless otherwise specified	Electrical characteristics, at T j =25 °C, unless otherwise specified	Electrical characteristics, at T j =25 °C, unless otherwise specified	Electrical characteristics, at T j =25 °C, unless otherwise specified	Electrical characteristics, at T j =25 °C, unless otherwise specified	Electrical characteristics, at T j =25 °C, unless otherwise specified	Electrical characteristics, at T j =25 °C, unless otherwise specified
Static characteristics	Static characteristics	Static characteristics	Static characteristics	Static characteristics	Static characteristics	Static characteristics
Drain-source breakdown voltage	V (BR)DSS	V GS =0 V, I D =1 mA	40	-	-	V
Gate threshold voltage	V GS(th)	V DS = V GS , I D =14 μA	1.2	-	2
Zero gate voltage drain current	I DSS	V DS =40 V, V GS =0 V, T j =25 °C	-	0.1	1	μA
		V DS =40 V, V GS =0 V, T j =125 °C	-	10	100
Gate-source leakage current	I GSS	V GS =20 V, V DS =0 V	-	10	100	nA
Drain-source on-state resistance	R DS(on)	V GS =4.5 V, I D =20 A	-	11.0	13.7	m W
		V GS =10 V, I D =40 A	-	7.8	9.3
Gate resistance	R G		-	1	-	W
Transconductance	g fs	| V DS |>2| I D | R DS(on)max , I D =40 A	34	67	-	S
Parameter	Symbol	Conditions	Values - min.	Values - typ.	Values - max.	Unit
Dynamic characteristics
Input capacitance	C iss	V GS =0 V, V DS =20 V, f =1 MHz	-	1400	1900	pF
Output capacitance	C oss	V GS =0 V, V DS =20 V, f =1 MHz	-	340	450	pF
Reverse transfer capacitance	C rss	V GS =0 V, V DS =20 V, f =1 MHz	-	16	-	pF
Turn-on delay time	t d(on)	V DD =20 V, V GS =10 V, I =30 A, R =1.6 W	-	3.6	-	ns
Rise time	t r	V DD =20 V, V GS =10 V, I =30 A, R =1.6 W	-	2.4	-
Turn-off delay time	t d(off)	D G,ext	-	16	-
Fall time	t f	V DD =20 V, V GS =10 V, I =30 A, R =1.6 W	-	2.8	-
Gate Charge Characteristics 5)
Gate to source charge	Q gs	V DD =20 V, I D =30 A, V GS =0 to 10 V	-	4.9	-	nC
Gate charge at threshold	Q g(th)	V DD =20 V, I D =30 A, V GS =0 to 10 V	-	2.3	-	nC
Gate to drain charge	Q gd	V DD =20 V, I D =30 A, V GS =0 to 10 V	-	2.0	-	nC
Switching charge	Q sw	V DD =20 V, I D =30 A, V GS =0 to 10 V	-	4.6	-	nC
Gate charge total	Q g	V DD =20 V, I D =30 A, V GS =0 to 10 V	-	18	24	nC
Gate plateau voltage	V plateau	V DD =20 V, I D =30 A, V GS =0 to 10 V	-	3.5	-	V
Gate charge total	Q g	V DD =20 V, I D =30 A, V GS =0 to 4.5 V	-	8.6	11.4	nC
Gate charge total, sync. FET	Q g(sync)	V DS =0.1 V, V GS =0 to 10 V	-	17	-	nC
Output charge	Q oss	V DD =20 V, V GS =0 V	-	13	-	nC
Reverse Diode
Diode continuous forward current	I S	T C =25 °C	-	-	29	A
Diode pulse current	I S,pulse	T C =25 °C	-	-	196	A
Diode forward voltage	V SD	V GS =0 V, I F =40 A, T j =25 °C	-	0.9	1.2	V
Reverse recovery charge	Q rr	V R =20 V, I F = I S , d i F /d t =400 A/μs	-	15	-	nC

I

D=f(

V

DS);

T C=25 °C; D =0

parameter: t

p

$$Z_{\text{thJC}}=f(t_p)$$

parameter:

D = t p / T