BAT54C
Dual Schottky Barrier DiodeThe BAT54C is a dual schottky barrier diode from Diotec Semiconductor. View the full BAT54C datasheet below including key specifications.
BAT54C shares its datasheet with BAT54S, whose page lists every part number it covers.
Official BAT54C datasheet (PDF) — the source this page was extracted from.
BAT54C Key Specifications
| Parameter | Value |
|---|---|
| Marking Code | *W1 |
| Configuration | Dual, common cathode |
| Qualification | AEC-Q101 |
| Storage Temperature | -65 °C to +150 °C |
| Forward Current (IF) | 200 mA |
| Reverse Voltage (VR) | 30 V |
| Junction Temperature (Tj) | 150 °C max |
| Reverse Recovery Time (Trr) | 5 ns max |
| Operating Ambient Temperature | -55 °C to +150 °C |
| Total Power Dissipation (Ptot) | 250 mW |
| Reverse Current (IR) At VR = 25 V | 2 µA max |
| Forward Voltage (VF) At IF = 10 MA | 400 mV max |
| Forward Voltage (VF) At IF = 100 MA | 800 mV max |
| Repetitive Peak Forward Current (IFRM) | 300 mA |
| Non-Repetitive Peak Forward Current (IFSM) | 600 mA |
| Diode Capacitance (Cd) At F = 1 MHz, VR = 1 V | 10 pF max |
| Thermal Resistance Junction To Ambient (Rth(J-A)) | 500 K/W |
BAT54C Overview
Part: BAT54 series (BAT54, BAT54A, BAT54C, BAT54S) — Nexperia
Type: Schottky Barrier Diode
Description: Planar Schottky barrier diode with an integrated guard ring for stress protection, rated for 30 V reverse voltage and 200 mA forward current in a SOT23 package.
Operating Conditions:
- Operating temperature: -55 to +150 °C (ambient)
Absolute Maximum Ratings:
- Max reverse voltage: 30 V
- Max forward current: 200 mA (Tamb = 25 °C)
- Repetitive peak forward current: 300 mA (tp ≤ 1 s; δ ≤ 0.5; Tamb = 25 °C)
- Non-repetitive peak forward current: 600 mA (square wave; tp < 10 ms)
- Total power dissipation: 250 mW (Tamb ≤ 25 °C, per device, one diode loaded)
- Max junction temperature: 150 °C
- Storage temperature: -65 to +150 °C
Key Specs:
- Forward voltage (IF = 0.1 mA): 240 mV max
- Forward voltage (IF = 1 mA): 320 mV max
- Forward voltage (IF = 10 mA): 400 mV max
- Forward voltage (IF = 30 mA): 500 mV max
- Forward voltage (IF = 100 mA): 800 mV max
- Reverse current (VR = 25 V): 2 μA max
- Diode capacitance (f = 1 MHz; VR = 1 V): 10 pF max
- Reverse recovery time (IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA): 5 ns max
Features:
- Low forward voltage
- Low capacitance
- AEC-Q101 qualified
- Integrated guard ring for stress protection
Applications:
- Ultra high-speed switching
- Line termination
- Voltage clamping
- Reverse polarity protection
Package:
- SOT23 (TO-236AB) plastic surface-mounted package, 3 leads
BAT54C Features
- Low forward voltage
- Low capacitance
- AEC-Q101 qualified
BAT54C Thermal Information
Table 6. Thermal characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per device; one diode loaded | Per device; one diode loaded | |||||
| R th(j-a) | thermal resistance from junction to ambient | in free air | - | - | 500 | K/W |
BAT54C Package Information
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
Other Diodes
- CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
- VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
- SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
- BSD3A311V – Brightking, ESD Protection Diode
- CH213K – WCH, Low Dropout Ideal Diode Chip
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- USBLC6-2SC6 – STMicroelectronics, ESD Protection Device
All Diodes datasheetsAll Diotec Semiconductor datasheets (7)
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