BAT54A
Dual Schottky Barrier DiodeThe BAT54A is a dual schottky barrier diode from Diotec Semiconductor. View the full BAT54A datasheet below including key specifications.
BAT54A shares its datasheet with BAT54S, whose page lists every part number it covers.
Official BAT54A datasheet (PDF) — the source this page was extracted from.
BAT54A Key Specifications
| Parameter | Value |
|---|---|
| Marking Code | *V3 |
| Configuration | Dual, common anode |
| Qualification | AEC-Q101 |
| Storage Temperature | -65 °C to +150 °C |
| Forward Current (IF) | 200 mA |
| Reverse Voltage (VR) | 30 V |
| Junction Temperature (Tj) | 150 °C max |
| Reverse Recovery Time (Trr) | 5 ns max |
| Operating Ambient Temperature | -55 °C to +150 °C |
| Total Power Dissipation (Ptot) | 250 mW |
| Forward Voltage (VF) At IF=1 MA | 320 mV max |
| Reverse Current (IR) At VR=25 V | 2 µA max |
| Forward Voltage (VF) At IF=10 MA | 400 mV max |
| Forward Voltage (VF) At IF=100 MA | 800 mV max |
| Repetitive Peak Forward Current (IFRM) | 300 mA |
| Diode Capacitance (Cd) At F=1 MHz, VR=1 V | 10 pF max |
| Non-Repetitive Peak Forward Current (IFSM) | 600 mA |
| Thermal Resistance Junction To Ambient (Rth(J-A)) | 500 K/W |
BAT54A Overview
Part: BAT54 series (BAT54, BAT54A, BAT54C, BAT54S) — Nexperia
Type: Schottky Barrier Diode
Description: Planar Schottky barrier diode with an integrated guard ring for stress protection, rated for 30 V reverse voltage and 200 mA forward current in a SOT23 package.
Operating Conditions:
- Operating temperature: -55 to +150 °C (ambient)
Absolute Maximum Ratings:
- Max reverse voltage: 30 V
- Max forward current: 200 mA (Tamb = 25 °C)
- Repetitive peak forward current: 300 mA (tp ≤ 1 s; δ ≤ 0.5; Tamb = 25 °C)
- Non-repetitive peak forward current: 600 mA (square wave; tp < 10 ms)
- Total power dissipation: 250 mW (Tamb ≤ 25 °C, per device, one diode loaded)
- Max junction temperature: 150 °C
- Storage temperature: -65 to +150 °C
Key Specs:
- Forward voltage (IF = 0.1 mA): 240 mV max
- Forward voltage (IF = 1 mA): 320 mV max
- Forward voltage (IF = 10 mA): 400 mV max
- Forward voltage (IF = 30 mA): 500 mV max
- Forward voltage (IF = 100 mA): 800 mV max
- Reverse current (VR = 25 V): 2 μA max
- Diode capacitance (f = 1 MHz; VR = 1 V): 10 pF max
- Reverse recovery time (IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA): 5 ns max
Features:
- Low forward voltage
- Low capacitance
- AEC-Q101 qualified
- Integrated guard ring for stress protection
Applications:
- Ultra high-speed switching
- Line termination
- Voltage clamping
- Reverse polarity protection
Package:
- SOT23 (TO-236AB) plastic surface-mounted package, 3 leads
BAT54A Features
- Low forward voltage
- Low capacitance
- AEC-Q101 qualified
BAT54A Thermal Information
Table 6. Thermal characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per device; one diode loaded | Per device; one diode loaded | |||||
| R th(j-a) | thermal resistance from junction to ambient | in free air | - | - | 500 | K/W |
BAT54A Package Information
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
Other Diodes
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- SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
- BSD3A311V – Brightking, ESD Protection Diode
- CH213K – WCH, Low Dropout Ideal Diode Chip
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- USBLC6-2SC6 – STMicroelectronics, ESD Protection Device
All Diodes datasheetsAll Diotec Semiconductor datasheets (7)
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