Memory ICs Datasheets

MR4A16B

Everspin Technologies

16,777,216-bit (1M x 16) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, >20-year non-volatile data retention and on-chip single-bit ECC

MR4A16BCMA35

Everspin Technologies

16Mbit (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention, industrial temperature range

MR4A16BCMA35R

Everspin Technologies

3.3V 16,777,216-bit (1M x 16) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, >20-year non-volatile data retention and on-chip ECC; industrial temperature, tape & reel BGA version.

MR4A16BCYS35

Everspin Technologies

16Mbit (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention, with internal ECC

MR4A16BCYS35R

Everspin Technologies

3.3V 1M x 16 (16,777,216-bit) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, and >20-year non-volatile data retention with on-chip single-bit ECC.

MR4A16BMA35

Everspin Technologies

16Mb (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention

MR4A16BMYS35

Everspin Technologies

16-Mbit (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, non-volatile storage and on-chip ECC; AEC-Q100 Grade 1 variant in 54-TSOP2.

MR4A16BMYS35R

Everspin Technologies

3.3V 16,777,216-bit (1M x 16) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, >20-year non-volatile data retention, and AEC-Q100 Grade 1 qualification in this variant

MR4A16BYS35

Everspin Technologies

16Mbit (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention

MR4A16BYS35R

Everspin Technologies

3.3V 1M x 16 (16,777,216-bit) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention

MT25QL128

Micron

128Mbit (16M x 8) SPI serial NOR flash memory with 133MHz clock in a 16-pin SOIC package

MX25L6406E

Macronix

64Mb (8M x 8) SPI serial NOR flash memory with dual output read, 86MHz clock, SFDP support, and 512-bit secured OTP

MX25L6473E

Macronix

3V 64M-bit CMOS MXSMIO serial multi I/O flash memory supporting single, dual and quad I/O SPI operation with auto program/erase, SFDP and 4K-bit secured OTP

MX25L6473EZNI-10G

Macronix

64M-bit Serial Multi I/O (SPI) Flash Memory with x1, x2, and x4 I/O modes.

MX25R6435FM2IH0

Macronix International Co., Ltd.

Ultra low power 64Mb (8M x 8) serial NOR Flash with single/dual/quad I/O (MXSMIO) interface and wide 1.65V-3.6V supply range, configured for High Performance Mode default

S25FL128SAGBHV203

Cypress Semiconductor Corporation

S25FL128S-family 128Mb SPI serial NOR flash; in this document it appears only as the drop-in replacement for obsolete item 2385264 in a Cypress end-of-life notice.

S29AL016J70BFI013

Cypress Semiconductor Corporation

S29AL016J-family 16Mbit parallel NOR flash memory; this document is a Cypress product termination notice (PTN183805A) listing S29AL016J70BFI013 as a drop-in replacement for other part numbers, not a full datasheet.

S29GL032N90TFI020

Cypress Semiconductor Corporation

S29GL032N 32 Mbit parallel NOR flash memory; the supplied document is a Cypress product termination notification (PTN183805A) that lists this part as a drop-in replacement for an obsolete part number and does not include its electrical data

S29JL032J60TFI010

Cypress Semiconductor Corporation

Cypress S29JL032J 32Mbit parallel NOR flash memory (60ns speed grade); the source is a product termination notification, so no electrical specs are given.

S34ML01G100TFI000

Cypress Semiconductor Corporation

Cypress S34ML01G1 series 1Gb SLC NAND flash memory, orderable part number S34ML01G100TFI000, listed here as the drop-in replacement for several end-of-life parts in a product termination notice.

SST25VF080B

Microchip Technology

8-Mbit SPI-compatible serial flash memory using SuperFlash technology with single 2.7V-3.6V supply, up to 66 MHz clock, and uniform 4/32/64-Kbyte erase capability

ST25DV04K-IE

STMicroelectronics

Dynamic NFC Forum Type 5 / ISO 15693 RFID tag IC with 4-Kbit EEPROM, I2C interface, Fast Transfer Mode buffer, energy harvesting output and GPO

ST25DV04K-JF

STMicroelectronics

Dynamic NFC Forum Type 5 / ISO/IEC 15693 RFID tag IC with 4-Kbit EEPROM, I2C interface, Fast Transfer Mode buffer, GPO and energy harvesting output

ST25DV16K

STMicroelectronics

Dynamic NFC Forum Type 5 / ISO/IEC 15693 RFID tag IC with 16-Kbit EEPROM, I2C interface, Fast Transfer Mode, GPO and energy harvesting

ST25DV64K

STMicroelectronics

Dynamic NFC Forum Type 5 / ISO/IEC 15693 tag IC with 64-Kbit EEPROM, I2C interface, Fast Transfer Mode, energy harvesting and GPO

W25Q128

Winbond

3V 128M-bit serial flash memory with standard, dual and quad SPI interface, for industrial and industrial plus grade applications

W25Q128JV

Winbond

128M-bit Serial Flash memory with Dual/Quad SPI interface, offering high performance and low power consumption for systems with limited space, pins and power.

W25Q128JVBIM

Winbond

W25Q128JVBIQ

Winbond

W25Q128JVBJM

Winbond