MX25L6473EZNI-10G

Serial Multi I/O Flash Memory

The MX25L6473EZNI-10G is a serial multi i/o flash memory from Macronix. View the full MX25L6473EZNI-10G datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official MX25L6473EZNI-10G datasheet (PDF) — the source this page was extracted from.

Manufacturer

Macronix

MX25L6473EZNI-10G Key Specifications

Parameter	Value
Memory size	64M-bit (8,388,608 x 8 bits)
Fast read speed (1 I/O)	104MHz with 8 dummy cycles
Fast read speed (2 I/O)	86MHz with 4 dummy cycles
Fast read speed (4 I/O)	Up to 104MHz
Page program time	0.7ms (typ.), 3ms (max.) per 256-byte page
Sector erase time	30ms (typ.) per 4K-byte sector
Block erase time	0.25s (typ.) per 64K-byte block
Active read current	19mA (max.) at 104MHz
Standby current	15μA (typ.)
Deep power down current	1μA (typ.)
Erase/program cycles	100,000 (Typical)
Data retention	20 years

MX25L6473EZNI-10G Overview

Part: MX25L6473EZNI-10G

Type: Serial Multi I/O Flash Memory

Description: 64M-bit Serial Multi I/O Flash Memory with 2.7–3.6V operation, supporting Single, Dual, and Quad I/O modes, and up to 104MHz read speed.

Operating Conditions:

Supply voltage: 2.7 to 3.6 V
Max clock frequency: Up to 104MHz (4 I/O read)

Key Specs:

Memory size: 64M-bit (8,388,608 x 8 bits)
Fast read speed (1 I/O): 104MHz with 8 dummy cycles
Fast read speed (2 I/O): 86MHz with 4 dummy cycles
Fast read speed (4 I/O): Up to 104MHz
Page program time: 0.7ms (typ.), 3ms (max.) per 256-byte page
Sector erase time: 30ms (typ.) per 4K-byte sector
Block erase time: 0.25s (typ.) per 64K-byte block
Active read current: 19mA (max.) at 104MHz
Standby current: 15μA (typ.)
Deep power down current: 1μA (typ.)
Erase/program cycles: 100,000 (Typical)
Data retention: 20 years

Features:

Multi I/O Support - Single I/O, Dual I/O and Quad I/O
Auto Erase and Auto Program Algorithms
Continuous Program mode
Permanently fixed QE bit, QE=1; and 4 I/O mode is enabled
Supports Serial Peripheral Interface -- Mode 0 and Mode 3
2048 Equal Sectors with 4K bytes each
128 Equal Blocks with 64K bytes each
Latch-up protected to 100mA from -1V to Vcc +1V
Advanced Security Features: BP0-BP3 block group protect, Flexible individual block protect, 4K bits secured OTP
Electronic Identification: JEDEC 1-byte Manufacturer ID and 2-byte Device ID, RES, REMS, REMS2, REMS4 commands
Support Serial Flash Discoverable Parameters (SFDP) mode

Package:

16-pin SOP (300mil)
8-pin SOP (200mil)
8-pin VSOP (200mil)
8-WSON (6x5mm)
12-ball WLCSP (Ball Diameter 0.30mm)

MX25L6473EZNI-10G Features

Multi I/O Support - Single I/O, Dual I/O and Quad I/O
Auto Erase and Auto Program Algorithms
Continuous Program mode
Permanently fixed QE bit, QE=1; and 4 I/O mode is enabled

MX25L6473EZNI-10G Pin Configuration

SYMBOL	DESCRIPTION
CS#	Chip Select
SI/SIO0	Serial Data Input (for 1xI/O)/ Serial Data Input & Output (for 2xI/O or 4xI/O mode)
SO/SIO1	Serial Data Output (for 1xI/O)/Serial Data Input & Output (for 2xI/O or 4xI/O mode)
SCLK	Clock Input
SIO2	Serial Data Input & Output (for 4xI/O mode)
SIO3	Serial data Input/Output for 4 x I/O mode
VCC	+ 3.0V Power Supply
GND	Ground
NC	No Connection

Note: SIO2 and SIO3 need to be externally pulled to a high (recommended) or low state when the device is in Standby mode or Deep Power mode.

MX25L6473EZNI-10G Electrical Characteristics

Temperature = -40°C to 85°C for Industrial grade, VCC = 2.7V ~ 3.6V

Symbol	Parameter	Notes	Min.	Typ.	Max.	Units	Test Conditions
ILI	Input Load Current	1			± 2	μA	VCC = VCC Max, VIN = VCC or GND
ILO	Output Leakage Current	1			± 2	μA	VCC = VCC Max, VOUT = VCC or GND
ISB1	VCC Standby Current	1		15	50	μA	VIN = VCC or GND, CS# = VCC
ISB2	Deep Power-down Current			1	25	μA	VIN = VCC or GND, CS# = VCC
ICC1	VCC Read	1			35	mA	f=104MHz (4 x I/O read) SCLK=0.1VCC/0.9VCC, SO=Open
ICC1	VCC Read	1			19	mA	f=104MHz (1 x I/O read) SCLK=0.1VCC/0.9VCC, SO=Open
ICC1	VCC Read	1			25	mA	fQ=86MHz (4 x I/O read) SCLK=0.1VCC/0.9VCC, SO=Open
ICC1	VCC Read	1			20	mA	fT=86MHz (2 x I/O read) SCLK=0.1VCC/0.9VCC, SO=Open
ICC1	VCC Read	1			10	mA	f=33MHz, SCLK=0.1VCC/0.9VCC, SO=Open
ICC2	VCC Program Current (PP)	1		15	25	mA	Program in Progress, CS# = VCC
ICC3	VCC Write Status Register (WRSR) Current			15	20	mA	Program status register in progress, CS#=VCC
ICC4	VCC Sector Erase Current (SE)	1		10	25	mA	Erase in Progress, CS#=VCC
ICC5	VCC Chip Erase Current (CE)	1		15	25	mA	Erase in Progress, CS#=VCC
VIL	Input Low Voltage		-0.5		0.8	V
VIH	Input High Voltage		0.7VCC		VCC+0.4	V
VOL	Output Low Voltage				0.4	V	IOL = 1.6mA
VOH	Output High Voltage		VCC-0.2			V	IOH = -100μA

MX25L6473EZNI-10G Absolute Maximum Ratings

Rating		Value
Ambient Operating Temperature	Industrial grade	-40°C to 85°C
Storage Temperature		-65°C to 150°C
Applied Input Voltage		-0.5V to VCC+0.5V
Applied Output Voltage		-0.5V to VCC+0.5V
VCC to Ground Potential		-0.5V to 4.0V

MX25L6473EZNI-10G Package Information

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
MX25L6473E	Macronix	—

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All Memory ICs datasheets All Macronix datasheets (3)

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