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W25Q32JVSSIQ

The W25Q32JVSSIQ is an electronic component from Winbond. View the full W25Q32JVSSIQ datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

W25Q32JVSSIQ shares its datasheet with W25Q32JV, whose page lists every part number it covers.

Official W25Q32JVSSIQ datasheet (PDF) — the source this page was extracted from.

Manufacturer

Winbond

Category

Memory ICs

Package

8-SOIC (0.209", 5.30mm Width)

Lifecycle

Obsolete (Last Updated: 2 weeks ago)

W25Q32JVSSIQ Key Specifications

ParameterValue
Access Time6 ns
Ambient Temperature Range High85 °C
Case/PackageSOP
China RoHSCompliant
Clock Frequency133 MHz
Density256 Mb
DigiKey ProgrammableVerified
Frequency133 MHz
Height2.16 mm
Height - Seated (Max)2.16 mm
InterfaceSPI
Introduction Date2016-06-06
Lead FreeLead Free
Length5.28 mm
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2026-04-30
LTD Date2026-07-30
Manufacturer Package IdentifierW25Q32JVSSIQ
Max Operating Temperature85 °C
Max Supply Voltage3.6 V
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O
Memory Organization4M x 8
Memory Size4 MB
Memory Size32Mbit
Memory TypeNon-Volatile
Memory TypeFLASH
Min Operating Temperature-40 °C
Min Supply Voltage2.7 V
MountSurface Mount
Mounting TypeSurface Mount
Nominal Supply Voltage (DC)3 V
Number of Circuits1
Number of Pins8
Number of Terminals8
Operating Supply Voltage3 V
Operating Temperature-40°C ~ 85°C (TA)
Package / Case8-SOIC (0.209", 5.30mm Width)
Page Size256 B
REACH SVHCUnaffected
RoHSCompliant
Schedule B8542320070, 8542320070|8542320070, 8542320070|8542320070|8542320070, 8542320070|8542320070|8542320070|8542320070
Supplier Device Package8-SOIC
Diode TechnologyFLASH - NOR
Temperature GradeIndustrial
Terminal Pitch1.27 mm
Supply Voltage2.7V ~ 3.6V
Width5.28 mm
Write Cycle Time3ms

W25Q32JVSSIQ Overview

Part: W25Q32JV-DTR — Winbond

Type: Serial NOR Flash Memory

Description: 3 V, 32M-bit serial NOR Flash memory supporting Standard, Dual, Quad SPI, QPI, and DTR with up to 133 MHz clock frequency.

Operating Conditions:

  • Supply voltage: 2.7 V to 3.6 V

Absolute Maximum Ratings:

  • Max supply voltage: 4.6 V (-0.6 to 4.6 V)
  • Voltage applied to any pin: -0.6 to VCC+0.4 V
  • Transient voltage on any pin: -2.0 V to VCC+2.0 V (<20 ns transient relative to ground)
  • Max junction/storage temperature: -65 to +150 °C (storage temperature)
  • Electrostatic discharge voltage: -2000 to +2000 V (Human Body Model)

Key Specs:

  • Memory density: 32M-bit (4M-byte)
  • Page size: 256 bytes (16,384 programmable pages)
  • Sector erase size: 4 KB (1,024 erasable sectors)
  • Block erase sizes: 32 KB and 64 KB (64 erasable 64KB blocks)
  • Max clock frequency: up to 133 MHz (equivalent to 266 MHz for Dual I/O, 532 MHz for Quad I/O)
  • Power-down current: 1 μA

Features:

  • Standard SPI, Dual/Quad SPI, QPI, and DTR (Double Transfer Rate) support
  • Continuous Read Mode for Execute-in-Place (XIP) operation
  • Uniform 4KB sectors, 32KB / 64KB blocks, and chip erase capabilities
  • Write protection features including /WP pin, individual block/sector lock, and volatile/non-volatile status registers
  • Dedicated /HOLD or /RESET pin functionality

Applications:

  • Code shadowing to RAM
  • Execute-in-place (XIP) direct code execution
  • Voice, text, and data storage in space-, pin-, and power-constrained systems

Package:

  • 8-pin SOIC 150-mil (Package Code SN)
  • 8-pin SOIC 208-mil (Package Code SS)
  • 8-pad WSON 6x5-mm (Package Code ZP)
  • 8-pad XSON 4x4x0.45-mm (Package Code XG)
  • 16-pin SOIC 300-mil (Package Code SF)
  • 24-ball TFBGA 8x6-mm (Package Code TB, 5x5 ball array)
  • 24-ball TFBGA 8x6-mm (Package Code TC, 6x4 ball array)

W25Q32JVSSIQ Features

  • Software and Hardware Write-Protect
  • Power Supply Lock-Down and OTP protection
  • Top/Bottom, Complement array protection
  • Individual Block/Sector array protection
  • 64-Bit Unique ID for each device
  • Discoverable Parameters (SFDP) Register
  • 3X256-Bytes Security Registers with OTP locks
  • Volatile & Non-volatile Status Register Bits

W25Q32JVSSIQ Pin Configuration

Figure 1a. W25Q32JV Pin Assignments, 8-pin SOIC 150/208-mil (Package Code SN/SS)

W25Q32JVSSIQ Electrical Characteristics

PARAMETERSYMBOLCONDITIONSSPECSPECSPECUNIT
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNIT
Input CapacitanceCIN (1)VIN = 0V (1)6pF
Output CapacitanceCout (1)VOUT = 0V (1)8pF
Input LeakageI LI±2μA
I/O LeakageILO±2μA
Standby CurrentICC1/CS = VCC, VIN = GND or VCC1050μA
Power-down CurrentICC2/CS = VCC, VIN = GND or VCC115μA
Current Read Data / Dual /Quad 50MHz (2)ICC3C = 0.1 VCC / 0.9 VCC DO = Open815mA
Current Read Data / Dual /Quad 80MHz (2)ICC3C = 0.1 VCC / 0.9 VCC DO = Open1018mA
Current Read Data / Dual /Quad 104MHz (2)ICC3C = 0.1 VCC / 0.9 VCC DO = Open1220mA
Current Write Status RegisterICC4/CS = VCC2025mA
Current Page ProgramICC5/CS = VCC2025mA
Current Sector/Block EraseICC6/CS = VCC2025mA
Current Chip EraseICC7/CS = VCC2025mA
Input Low VoltageVIL-0.5VCC x 0.3V
Input High VoltageVIHVCC x 0.7VCC + 0.4V
Output Low VoltageVOLIOL = 100 μA0.2V
Output High VoltageVOHIOH = -100 μAVCC - 0.2V
  1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V.

  2. Checker Board Pattern.

W25Q32JVSSIQ Absolute Maximum Ratings

PARAMETERSSYMBOLCONDITIONSRANGEUNIT
Supply VoltageVCC-0.6 to 4.6V
Voltage Applied to Any PinVIORelative to Ground-0.6 to VCC+0.4V
Transient Voltage on any PinVIOT<20nS Transient Relative to Ground-2.0V to VCC+2.0VV
Storage TemperatureTSTG-65 to +150° C
Lead TemperatureTLEADSee Note (2)° C
Electrostatic Discharge VoltageVESDHuman Body Model (3)-2000 to +2000V
  1. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability. Exposure beyond absolute maximum ratings may cause permanent damage.
  2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
  3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
W25Q32JVWinbond—
W25Q32JV-DTRWinbondSOIC-8 (150-mil)
W25Q32JV-IMWinbond—
W25Q32JVSSIMWinbond8-SOIC (0.209", 5.30mm Width)
W25Q32JVXGIMWinbond—
W25Q32JVXGJMWinbondXSON-8 4x4mm

Other Memory ICs

All Memory ICs datasheetsAll Winbond datasheets (73)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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