Memory ICs Datasheets

CAT24C02

onsemi

2-Kb I2C serial EEPROM organized as 16 pages of 16 bytes, supporting Standard (100 kHz) and Fast (400 kHz) I2C with hardware write protection

CAT24C04

onsemi

4-Kb I2C serial EEPROM organized as 32 pages of 16 bytes, supporting Standard (100 kHz) and Fast (400 kHz) I2C with 16-byte page write buffer and hardware write protection.

CAT24C08

onsemi

8-Kb I2C serial EEPROM organized as 64 pages of 16 bytes, supporting Standard (100 kHz) and Fast (400 kHz) I2C with hardware write protection

CAT24C16

onsemi

16-Kbit I2C serial EEPROM organized as 128 pages of 16 bytes, supporting Standard (100 kHz) and Fast (400 kHz) I2C with hardware write protection.

CAT24C512

onsemi

512-Kb (64K x 8) I2C serial EEPROM supporting Standard, Fast and Fast-Plus modes with 128-byte page write, hardware write protect and on-chip ECC

CAT24M01

onsemi

1-Mb (131,072 x 8) I2C serial EEPROM with 256-byte page write buffer, supporting Standard, Fast and Fast-Plus (1 MHz) I2C, hardware write protect and on-chip ECC

CAT24M01HU5I

onsemi

1-Mb (131,072 x 8) I2C serial EEPROM with 256-byte page write, supporting Standard, Fast and Fast-Plus I2C, hardware write protect and on-chip ECC

CAT24M01WE

onsemi

1-Mb (131,072 x 8) I2C serial EEPROM with 256-byte page write buffer, supporting Standard, Fast and Fast-Plus I2C, hardware write protection and on-chip ECC

CAT24M01WI

onsemi

1-Mb (131,072 x 8) I2C serial EEPROM with 256-byte page write buffer, supporting Standard, Fast and Fast-Plus I2C modes with on-chip ECC and hardware write protection

CAT24M01XI

onsemi

1-Mb (131,072 x 8) I2C serial EEPROM with 256-byte page write buffer, supporting Standard, Fast and Fast-Plus modes, hardware write protect and on-chip ECC

CAT24M01YI

onsemi

1-Mb (131,072 x 8) I2C serial EEPROM with 256-byte page write, Standard/Fast/Fast-Plus (1 MHz) support, hardware write protect and on-chip ECC

CAT24M01YI−GT3

onsemi

CAT24M01 Series 1024 kb 1.8 - 5.5 V I2C CMOS Serial EEPROM-TSSOP-8

CY62167EV30

Cypress

16-Mbit (1M x 16 / 2M x 8) low-power CMOS static RAM (MoBL) with 45 ns access time, ultra-low standby current and automatic power-down

CY62167EV30LL

Cypress

16-Mbit (1M × 16 / 2M × 8) MoBL ultra-low-power CMOS static RAM with 45 ns access time and wide 2.2-3.6 V supply range

CY62167EV30LL-45BVI

Cypress

16-Mbit (1M x 16 / 2M x 8) low-power MoBL CMOS static RAM with 45 ns access time and automatic power-down, in a 48-ball VFBGA package for the BVI suffix

CY62167EV30LL-45BVXA

Cypress

16-Mbit (1M x 16 / 2M x 8) low-power CMOS static RAM with 45 ns access time and automatic power-down, Automotive-A grade in a Pb-free 48-ball VFBGA package

CY62167EV30LL-45BVXAT

Cypress

16-Mbit (1M x 16 / 2M x 8) low-power CMOS static RAM with 45 ns access time, MoBL ultra-low active and standby power, and automatic power-down

CY62167EV30LL-45BVXIT

Cypress

16-Mbit (1M x 16 / 2M x 8) low-power CMOS static RAM with 45 ns access time, wide 2.2-3.6 V supply, and ultra-low standby current (MoBL).

CY62167EV30LL-45ZXA

Cypress

16-Mbit (1M x 16 / 2M x 8) MoBL low-power CMOS static RAM with 45 ns access time, in a 48-pin Pb-free TSOP I package, Automotive-A grade

CY62167EV30LL-45ZXAT

Cypress

16-Mbit (1M x 16 / 2M x 8) low-power CMOS static RAM with 45 ns access time, 2.2-3.6 V supply, and ultra-low active and standby current (MoBL).

CY62167EV30LL-45ZXI

Cypress

16-Mbit (1M × 16 / 2M × 8) high-speed CMOS static RAM with ultra-low active and standby power (MoBL), 45 ns access, 2.2–3.6 V operation

CY62167EV30LL-45ZXIT

Cypress

16-Mbit (1M x 16 / 2M x 8) low-power CMOS static RAM with 45 ns access time and 2.2-3.6 V supply, tape-and-reel Pb-free 48-pin TSOP I, industrial temperature range

EG25GGB-256-SGNS

Quectel

Microchip MemoryLink selector guide for 24-series I2C serial EEPROMs from 128 bit to 256 Kb; it does not describe the requested part EG25GGB-256-SGNS, which is not mentioned anywhere in the document.

FM24V10

Ramtron

1-Mbit (128K x 8) ferroelectric nonvolatile RAM with two-wire I2C interface up to 3.4 MHz, NoDelay writes, and 10^14 read/write endurance

FM24V10-GTR

Ramtron

1Mb (131,072 x 8) ferroelectric nonvolatile RAM with a two-wire (I2C) interface up to 3.4 MHz, NoDelay writes and 10^14 read/write endurance

FM24VN10

Ramtron

1-Mbit (128K x 8) I2C serial ferroelectric nonvolatile RAM with Device ID and unique 8-byte serial number, 100 trillion read/write endurance and no write delay

FM25V02A-G

Infineon Technologies

256-Kbit (32K x 8) nonvolatile ferroelectric RAM with 40-MHz SPI interface, 10^14 write endurance, and 151-year data retention

GD25Q128E

GigaDevice

128Mbit (16MByte) SPI NOR serial flash memory with Standard/Dual/Quad SPI interface, up to 133MHz fast read clock, and software/hardware write protection

GD25Q128ESIG

GigaDevice

NOR Flash

IS25LP064

ISSI