FM25V02A-G

Part: FM25V02A — Cypress Semiconductor / Infineon Technologies

Type: Serial (SPI) F-RAM Nonvolatile Memory

Description: 256-Kbit (32K × 8) nonvolatile serial F-RAM operating from 2.0 V to 3.6 V up to 40 MHz with virtually unlimited endurance and zero write delays.

Operating Conditions:

• Supply voltage: 2.0 V to 3.6 V
• Operating temperature: -40 °C to +85 °C
• Clock frequency: 0 to 40 MHz

Absolute Maximum Ratings:

• Max supply voltage: -1.0 V to +4.5 V (relative to VSS)
• Max junction/storage temperature: -65 °C to +125 °C (storage)

Key Specs:

• Density: 256 Kbit (32,768 × 8 bits)
• Interface: SPI (Mode 0 and Mode 3) up to 40 MHz
• Read/write endurance: 100 trillion (10^14) cycles
• Data retention: 151 years
• Active current: 2.5 mA (at 40 MHz)
• Standby current: 150 μA
• Sleep mode current: 8 μA

Features:

• High-endurance ferroelectric random access memory (F-RAM)
• NoDelay writes at bus speed without data polling
• Hardware and software write protection schemes
• Low power consumption with sleep mode
• Read-only Device ID (Manufacturer ID and Product ID)
• Direct drop-in hardware replacement for serial EEPROM and flash
• RoHS compliant

Applications:

• Data logging
• Demanding industrial controls
• Frequent or rapid nonvolatile write storage

Package:

• 8-pin SOIC
• 8-pin DFN

• ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
• ❐ High-endurance 100 trillion (10 14 ) read/writes
• ❐ 151-year data retention (See Data Retention and Endurance on page 14)
• ❐ NoDelay™ writes
• ❐ Advanced high-reliability ferroelectric process
• ■ Very fast serial peripheral interface (SPI)
• ❐ Up to 40-MHz frequency
• ❐ Direct hardware replacement for serial flash and EEPROM
• ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• ■ Sophisticated write-protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array
• ■ Device ID ❐ Manufacturer ID and Product ID
• ■ Low power consumption ❐ 2.5-mA active current at 40 MHz ❐ 150- A standby current ❐ 8- A sleep mode current
• ■ Low-voltage operation: V DD = 2.0 V to 3.6 V
• ■ Industrial temperature: -40 C to +85 C
• ■
• Packages ❐ 8-pin small outline integrated circuit (SOIC) package ❐ 8-pin dual flat no-leads (DFN) package
• ■ Restriction of hazardous substances (RoHS) compliant

• Storage temperature ............................... -65 °C to + 125 °C
• Maximum accumulated storage time At 125 °C ambient temperature ................................. 1000 h At 85 °C ambient temperature ................................ 10 Years
• Ambient temperature with power applied ................................... -55 °C to +125 °C
• Supply voltage on V DD relative to V SS ........-1.0 V to + 4.5 V
• Input voltage ........... -1.0 V to +4.5 V and V IN < V DD + 1.0 V
• DC voltage applied to outputs in HI-Z state ........................................-0.5 V to V DD + 0.5 V
• Transient voltage (< 20 ns) on any pin to ground potential ............-2.0 V to V DD + 2.0 V