FM24V10
F-RAM MemoryThe FM24V10 is a f-ram memory from Ramtron. View the full FM24V10 datasheet below including key specifications, absolute maximum ratings.
Official FM24V10 datasheet (PDF) — the source this page was extracted from.
FM24V10 Key Specifications
| Parameter | Value |
|---|---|
| Endurance | 10^14 read/write cycles |
| Interface | I2C (two-wire) |
| Memory Size | 1 Mbit (131,072 x 8) |
| Active Current | <150 µA (typ. @ 100 kHz) |
| Data Retention | 10 years |
| Supply Voltage | 2.0V to 3.6V |
| Standby Current | 90 µA (typ.) |
| Sleep Mode Current | 5 µA (typ.) |
| Device Address Pins | A1, A2 (up to 4 devices per bus) |
| Maximum Bus Frequency | 3.4 MHz (supports 100 kHz and 400 kHz legacy) |
| Operating Temperature | -40°C to +85°C |
FM24V10 Overview
Part: FM24V10 Type: F-RAM Memory Description: A 1-megabit nonvolatile F-RAM memory organized as 131,072 x 8 bits, featuring 100 trillion read/writes endurance, 10-year data retention, and a fast two-wire serial interface up to 3.4 MHz.
Operating Conditions:
- Supply voltage: 2.0V - 3.6V
- Operating temperature: -40 to +85 °C
- Max bus frequency: 3.4 MHz
Key Specs:
- Memory organization: 131,072 x 8 bits
- Endurance: 100 Trillion (10^14) Read/Writes
- Data retention: 10 years
- Active current: < 150 A (typ. @ 100KHz)
- Standby current: 90 A (typ.)
- Sleep mode current: 5 A (typ.)
- Interface: Two-wire (I2C)
- Slave ID (bits 7-4): 1010b
Features:
- 1M bit Ferroelectric Nonvolatile RAM
- NoDelay™ Writes
- Advanced High-Reliability Ferroelectric Process
- Direct hardware replacement for EEPROM
- Supports legacy timing for 100 kHz & 400 kHz
- Device ID reads out Manufacturer ID & Part ID
- Unique Serial Number (FM24VN10)
- Low Voltage, Low Power Operation
- Write Protect (WP) pin
Applications:
- Data collection requiring frequent or rapid writes
- Demanding industrial controls
Package:
- 8-pin SOIC
FM24V10 Pin Configuration
| Pin Name | Function |
|---|---|
| A1, A2 | Device Select Address |
| SDA | Serial Data/address |
| SCL | Serial Clock |
| WP | Write Protect |
| VDD | Supply Voltage |
| VSS | Ground |
Figure 1. FM24V10 Block Diagram
FM24V10 Absolute Maximum Ratings
| Symbol | Description | Ratings |
|---|---|---|
| V DD | Power Supply Voltage with respect to V SS | -1.0V to +4.5V |
| V IN | Voltage on any pin with respect to V SS | -1.0V to +4.5V and V IN < V DD +1.0V * |
| T STG | Storage Temperature | -55 C to +125 C |
| T LEAD | Lead Temperature (Soldering, 10 seconds) | 260 C |
| V ESD | Electrostatic Discharge Voltage - Human Body Model (AEC-Q100-002 Rev. E) - Charged Device Model (AEC-Q100-011 Rev. B) - Machine Model (AEC-Q100-003 Rev. E) | 2.5kV 1.25kV 200V |
| Package Moisture Sensitivity Level | MSL-1 |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| FM24V10-G | Ramtron | 8-pin SOIC |
| FM24V10-GTR | Ramtron | 8-pin 'Green'/RoHS SOIC |
| FM24VN10 | Ramtron | SOIC-8 |
Other Memory ICs
- CH347T – WCH, Serial SLC NAND Flash Memory
- M24512-DFMC6TG – STMicroelectronics, EEPROM
- ST25DV04KC-JF6L3 – STMicroelectronics, Dynamic NFC/RFID Tag IC
- ZD25WQ16CTIGT – Zetta, Serial Multi I/O NOR Flash
- AT25SL128A-MHE-T – Renesas Electronics, 128-Mbit SPI Serial NOR Flash
- 23A1024 – Microchip Technology, Serial SRAM
- 23LC1024 – Microchip Technology, Serial SRAM
- 23LC1024-I/P – Microchip Technology, Serial SRAM
Ask your AI agent about the FM24V10
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp
Then ask: "Can the FM24V10 run from my 12 V rail? Check it against the datasheet limits."
Create a free account $2 of usage every month, no card needed.