FM24V10-G

Part: FM24V10 Type: F-RAM Memory Description: A 1-megabit nonvolatile F-RAM memory organized as 131,072 x 8 bits, featuring 100 trillion read/writes endurance, 10-year data retention, and a fast two-wire serial interface up to 3.4 MHz.

Operating Conditions:

• Supply voltage: 2.0V - 3.6V
• Operating temperature: -40 to +85 °C
• Max bus frequency: 3.4 MHz

Key Specs:

• Memory organization: 131,072 x 8 bits
• Endurance: 100 Trillion (10^14) Read/Writes
• Data retention: 10 years
• Active current: < 150 A (typ. @ 100KHz)
• Standby current: 90 A (typ.)
• Sleep mode current: 5 A (typ.)
• Interface: Two-wire (I2C)
• Slave ID (bits 7-4): 1010b

Features:

• 1M bit Ferroelectric Nonvolatile RAM
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process
• Direct hardware replacement for EEPROM
• Supports legacy timing for 100 kHz & 400 kHz
• Device ID reads out Manufacturer ID & Part ID
• Unique Serial Number (FM24VN10)
• Low Voltage, Low Power Operation
• Write Protect (WP) pin

Applications:

• Data collection requiring frequent or rapid writes
• Demanding industrial controls

Package:

• 8-pin SOIC

FM24V10-G Pinout

Package: 8-pin SOIC

Notes

• Pin 1 is marked NC (No Connect) in the pin diagram and should not be connected.
• SDA and SCL are I²C bus pins; typical open-drain/open-collector outputs with pull-up resistors required.
• A1 and A2 are address selection inputs for device addressing on the I²C bus.
• WP is the Write Protect input; logic level controls write protection of the FRAM array.