GD25Q128ESIG

Part: GD25Q128E

Type: Serial Flash Memory

Description: 128M-bit (16M-Byte) Serial Flash supporting Standard, Dual, and Quad SPI with a maximum clock frequency of 133MHz, enabling Quad I/O data transfer up to 532Mbits/s. It operates from a 2.7-3.6V supply and offers a minimum of 100,000 program/erase cycles.

Operating Conditions:

• Supply voltage: 2.7-3.6V
• Operating temperature: -40 to +85 °C
• Max clock frequency: 133MHz

Absolute Maximum Ratings:

• Max supply voltage (VCC): +4.0V
• Max junction temperature: +150 °C
• Storage temperature: -65 to +150 °C

Key Specs:

• Memory Size: 128M-bit (16M-Byte)
• Page Size: 256 Bytes
• Max Clock Frequency: 133MHz (for fast read with 30PF load)
• Quad I/O Data Transfer Rate: up to 532Mbits/s
• Program/Erase Cycles: Minimum 100,000
• Data Retention: 20-year typical
• Standby Current: 14μA typical
• Deep Power Down Current: 1μA typical

Features:

• 128M-bit Serial Flash (16M-Byte)
• Standard, Dual, Quad SPI
• High Speed Clock Frequency: 133MHz
• Software/Hardware Write Protection
• Endurance: Minimum 100,000 Program/Erase Cycles
• Data Retention: 20-year typical
• Allows XiP (eXecute in Place) Operation
• Fast Program/Erase Speed
• Flexible Architecture: Uniform Sector of 4K-Byte, Uniform Block of 32/64K-Byte
• Low Power Consumption: 14μA typical standby, 1μA typical deep power down
• Advanced Security Features: 128-bit Unique ID, SFDP register, 3x1024-Byte Security Registers With OTP Locks
• Single Power Supply Voltage: 2.7-3.6V

Package:

• SOP8 208mil
• SOP16 300mil
• USON8 (4x4mm, 0.45mm thickness)
• WSON8 (6x5mm)
• WSON8 (8x6mm)
• TFBGA-24ball (6x4 Ball Array)
• TFBGA-24ball (5x5 Ball Array)

• ◆ 128M-bit Serial Flash
• 16M-Byte
• 256 Bytes per programmable page
• ◆ Standard, Dual, Quad SPI
• Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#, RESET#
• Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#, RESET#
• Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET#
• ◆ High Speed Clock Frequency
• 133MHz for fast read with 30PF load
• Dual I/O Data transfer up to 266Mbits/s
• Quad I/O Data transfer up to 532Mbits/s
• ◆ Software/Hardware Write Protection
• Write protect all/portion of memory via software
• Enable/Disable protection with WP# Pin
• T op/Bottom Block protection
• ◆ Endurance and Data Retention
• Minimum 100,000 Program/Erase Cycles
• 20-year data retention typical
• ◆ Allows XiP (eXecute in Place) Operation
• High speed Read reduce overall XiP instruction fetch time
• Continuous Read with Wrap further reduce data latency to fill up SoC cache
• ◆ Fast Program/Erase Speed
• Page Program time: 0.5ms typical
• Sector Erase time: 45ms typical
• Block Erase time: 0.15s/0.25s typical
• Chip Erase time: 50s typical
• ◆ Flexible Architecture
• Uniform Sector of 4K-Byte
• Uniform Block of 32/64K-Byte
• ◆ Low Power Consumption
• 14μA typical standby current
• 1μA typical deep power down current
• ◆ Advanced Security Features
• 128-bit Unique ID for each device
• Serial Flash Discoverable parameters (SFDP) register
• 3x1024-Byte Security Registers With OTP Locks
• ◆ Single Power Supply Voltage
• Full voltage range: 2.7-3.6V
• ◆ Package Information
• SOP8 208mil
• SOP16 300mil
• USON8 (4x4mm, 0.45mm thickness)
• WSON8 (6x5mm)
• WSON8 (8x6mm)
• TFBGA-24ball (6x4 Ball Array)
• TFBGA-24ball (5x5 Ball Array)

(T=-40 °C 85 °C , VCC=2.73.6V)

1. Typical value at T = 25 °C , VCC = 3.3V.

2. Value guaranteed by design and/or characterization, not 100% tested in production.

Figure 37. Input Test Waveform and Measurement Level