SST25VF080B
SPI Serial Flash MemoryThe SST25VF080B is a spi serial flash memory from Microchip Technology Inc.. View the full SST25VF080B datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Microchip Technology Inc.
Category
SPI Serial Flash Memory
Overview
Part: SST25VF080B Manufacturer: null
Type: 8-Mbit SPI Serial Flash
Description: 8-Mbit SPI serial flash memory with 2.7V-3.6V single voltage operation, up to 66 MHz clock frequency, and low power consumption.
Operating Conditions:
- Supply voltage: 2.7V-3.6V
- Operating temperature: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)
- Max clock frequency: 66 MHz
Absolute Maximum Ratings:
- Max supply voltage: null
- Max continuous current: null
- Max junction/storage temperature: null
Key Specs:
- Memory size: 8 Mbits
- Endurance: 100,000 Cycles (typical)
- Data Retention: Greater than 100 years
- Active Read Current: 10 mA (typical)
- Standby Current: 5 μA (typical)
- Chip Erase Time: 35 ms (typical)
- Sector/Block Erase Time: 18 ms (typical)
- Byte Program Time: 7 μs (typical)
Features:
- SPI Compatible: Mode 0 and Mode 3
- Flexible Erase Capability: Uniform 4-Kbyte sectors, 32-Kbyte overlay blocks, 64-Kbyte overlay blocks
- Auto Address Increment (AAI) Programming
- End of Write Detection
- Hold Pin (HOLD#)
- Write Protection (WP#) and Software Write Protection
Applications:
- null
Package:
- 8-lead PDIP (300 mils)
- 8-lead SOIC (200 mils)
- 8-contact WSON (6 mm x 5 mm)
- 16-ball XFBGA (Z-Scale™)
Features
- Single Voltage Read and Write Operations
- -2.7V-3.6V
- Serial Interface Architecture:
- -SPI Compatible: Mode 0 and Mode 3
- High-Speed Clock Frequency:
- -Up to 66 MHz
- Superior Reliability:
- -Endurance: 100,000 Cycles (typical)
- -Greater than 100 years Data Retention
- Low-Power Consumption:
- -Active Read Current: 10 mA (typical)
- -Standby Current: 5 μA (typical)
- Flexible Erase Capability:
- -Uniform 4-Kbyte sectors
- -Uniform 32-Kbyte overlay blocks
- -Uniform 64-Kbyte overlay blocks
- Fast Erase and Byte Program:
- -Chip Erase Time: 35 ms (typical)
- -Sector/Block Erase Time: 18 ms (typical)
- -Byte Program Time: 7 μs (typical)
- Auto Address Increment (AAI) Programming:
- -Decrease total chip programming time over Byte Program operations
- End of Write Detection:
- -Software polling the BUSY bit in STATUS Register
- -Busy Status readout on SO pin in AAI Mode
- Hold Pin (HOLD#):
- -Suspends a serial sequence to the memory without deselecting the device
- Write Protection (WP#):
- -Enables/Disables the Lock-Down function of the STATUS register
- Software Write Protection:
- -Write protection through Block Protection bits in STATUS register
- Temperature Range:
- -Commercial: 0°C to +70°C
- -Industrial: -40°C to +85°C
- All devices are RoHS compliant
Pin Configuration
Note 1: Outer bumps are connected to the inner bumps, but are not electrically tested. The outer bumps are used for mechanical support. For footprint compatibility with other SST ZScale™ Packages, electrical connection to the eight inner bumps is required.
Note 1: Outer bumps are connected to the inner bumps, but are not electrically tested. The outer bumps are used for mechanical support. For footprint compatibility with other SST ZScale™ Packages, electrical connection to the eight inner bumps is required.
Electrical Characteristics
TABLE 6-1: DC OPERATING CHARACTERISTICS
| Limits | Limits | Limits | Test Conditions | ||
|---|---|---|---|---|---|
| Symbol | Parameter | Min. | Max. | Unit | Test Conditions |
| IDDR1 | Read Current | - | 10 | mA | CE# = 0.1 VDD/0.9 VDD@25 MHz, SO = Open |
| IDDR2 | Read Current | - | 15 | mA | CE# = 0.1 VDD/0.9 VDD@50 MHz, SO = Open |
| IDDW | Program and Erase Current | - | 30 | mA | CE# = VDD |
| ISB | Standby Current | - | 30 | μA | CE# = VDD, VIN = VDD or VSS |
| I LI | Input Leakage Current | - | 1 | μA | VIN = GND to VDD, VDD = VDD Max |
| ILO | Output Leakage Current | - | 1 | μA | VOUT = GND to VDD, VDD = VDD Max |
| VIL | Input Low Voltage | - | 0.8 | V | VDD = VDD Min |
| VIH | Input High Voltage | 0.7 VDD | - | V | VDD = VDD Max |
| VOL1 | Output Low Voltage | - | 0.2 | V | IOL = 100 μA, VDD = VDD Min |
| VOL2 | Output Low Voltage | - | 0.4 | V | IOL = 1.6 mA, VDD = VDD Min |
| VOH | Output High Voltage | VDD-0.2 | - | V | IOH = -100 μA, VDD = VDD Min |
TABLE 6-2: Capacitance (TA = 25°C, f = 1 MHz, Other Pins Open)
| Parameter | Description | Test Condition | Maximum |
|---|---|---|---|
| COUT ( 1 ) | Output Pin Capacitance | VOUT = 0V | 12 pF |
| CIN ( 1 ) | Input Capacitance | VIN = 0V | 6 pF |
TABLE 6-3: RELIABILITY CHARACTERISTICS
| Symbol | Parameter | Minimum Specification | Unit | Test Method |
|---|---|---|---|---|
| NEND ( 1 ) | Endurance | 10,000 | Cycles | JEDEC Standard A117 |
| TDR ( 1 ) | Data Retention | 100 | Years | JEDEC Standard A103 |
| ILTH ( 1 ) | Latch Up | 100 + IDD | mA | JEDEC Standard 78 |
Absolute Maximum Ratings
- Storage temperature...............................................................................................................................-65°C to +150°C
- DC voltage on any pin to ground potential...........................................................................................-0.5V to VDD+0.5V
- Transient voltage (<20 ns) on any pin to ground potential...................................................................-2.0V to VDD+2.0V
- Package power dissipation capability (TA = 25°C)....................................................................................................1.0W
- Surface mount solder reflow temperature.......................................................................................260°C for 10 seconds
- Output short circuit current ( 1 ) ..................................................................................................................................50 mA
† NOTICE: Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
Note 1: Output shorted for no more than one second. No more than one output shorted at a time.
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