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SST25VF080B

SPI Serial Flash Memory

The SST25VF080B is a spi serial flash memory from Microchip Technology Inc.. View the full SST25VF080B datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Microchip Technology Inc.

Category

SPI Serial Flash Memory

Overview

Part: SST25VF080B Manufacturer: null

Type: 8-Mbit SPI Serial Flash

Description: 8-Mbit SPI serial flash memory with 2.7V-3.6V single voltage operation, up to 66 MHz clock frequency, and low power consumption.

Operating Conditions:

  • Supply voltage: 2.7V-3.6V
  • Operating temperature: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)
  • Max clock frequency: 66 MHz

Absolute Maximum Ratings:

  • Max supply voltage: null
  • Max continuous current: null
  • Max junction/storage temperature: null

Key Specs:

  • Memory size: 8 Mbits
  • Endurance: 100,000 Cycles (typical)
  • Data Retention: Greater than 100 years
  • Active Read Current: 10 mA (typical)
  • Standby Current: 5 μA (typical)
  • Chip Erase Time: 35 ms (typical)
  • Sector/Block Erase Time: 18 ms (typical)
  • Byte Program Time: 7 μs (typical)

Features:

  • SPI Compatible: Mode 0 and Mode 3
  • Flexible Erase Capability: Uniform 4-Kbyte sectors, 32-Kbyte overlay blocks, 64-Kbyte overlay blocks
  • Auto Address Increment (AAI) Programming
  • End of Write Detection
  • Hold Pin (HOLD#)
  • Write Protection (WP#) and Software Write Protection

Applications:

  • null

Package:

  • 8-lead PDIP (300 mils)
  • 8-lead SOIC (200 mils)
  • 8-contact WSON (6 mm x 5 mm)
  • 16-ball XFBGA (Z-Scale™)

Features

  • Single Voltage Read and Write Operations
  • -2.7V-3.6V
  • Serial Interface Architecture:
  • -SPI Compatible: Mode 0 and Mode 3
  • High-Speed Clock Frequency:
  • -Up to 66 MHz
  • Superior Reliability:
  • -Endurance: 100,000 Cycles (typical)
  • -Greater than 100 years Data Retention
  • Low-Power Consumption:
  • -Active Read Current: 10 mA (typical)
  • -Standby Current: 5 μA (typical)
  • Flexible Erase Capability:
  • -Uniform 4-Kbyte sectors
  • -Uniform 32-Kbyte overlay blocks
  • -Uniform 64-Kbyte overlay blocks
  • Fast Erase and Byte Program:
  • -Chip Erase Time: 35 ms (typical)
  • -Sector/Block Erase Time: 18 ms (typical)
  • -Byte Program Time: 7 μs (typical)
  • Auto Address Increment (AAI) Programming:
  • -Decrease total chip programming time over Byte Program operations
  • End of Write Detection:
  • -Software polling the BUSY bit in STATUS Register
  • -Busy Status readout on SO pin in AAI Mode
  • Hold Pin (HOLD#):
  • -Suspends a serial sequence to the memory without deselecting the device
  • Write Protection (WP#):
  • -Enables/Disables the Lock-Down function of the STATUS register
  • Software Write Protection:
  • -Write protection through Block Protection bits in STATUS register
  • Temperature Range:
  • -Commercial: 0°C to +70°C
  • -Industrial: -40°C to +85°C
  • All devices are RoHS compliant

Pin Configuration

Note 1: Outer bumps are connected to the inner bumps, but are not electrically tested. The outer bumps are used for mechanical support. For footprint compatibility with other SST ZScale™ Packages, electrical connection to the eight inner bumps is required.

Note 1: Outer bumps are connected to the inner bumps, but are not electrically tested. The outer bumps are used for mechanical support. For footprint compatibility with other SST ZScale™ Packages, electrical connection to the eight inner bumps is required.

Electrical Characteristics

TABLE 6-1: DC OPERATING CHARACTERISTICS

LimitsLimitsLimitsTest Conditions
SymbolParameterMin.Max.UnitTest Conditions
IDDR1Read Current-10mACE# = 0.1 VDD/0.9 VDD@25 MHz, SO = Open
IDDR2Read Current-15mACE# = 0.1 VDD/0.9 VDD@50 MHz, SO = Open
IDDWProgram and Erase Current-30mACE# = VDD
ISBStandby Current-30μACE# = VDD, VIN = VDD or VSS
I LIInput Leakage Current-1μAVIN = GND to VDD, VDD = VDD Max
ILOOutput Leakage Current-1μAVOUT = GND to VDD, VDD = VDD Max
VILInput Low Voltage-0.8VVDD = VDD Min
VIHInput High Voltage0.7 VDD-VVDD = VDD Max
VOL1Output Low Voltage-0.2VIOL = 100 μA, VDD = VDD Min
VOL2Output Low Voltage-0.4VIOL = 1.6 mA, VDD = VDD Min
VOHOutput High VoltageVDD-0.2-VIOH = -100 μA, VDD = VDD Min

TABLE 6-2: Capacitance (TA = 25°C, f = 1 MHz, Other Pins Open)

ParameterDescriptionTest ConditionMaximum
COUT ( 1 )Output Pin CapacitanceVOUT = 0V12 pF
CIN ( 1 )Input CapacitanceVIN = 0V6 pF

TABLE 6-3: RELIABILITY CHARACTERISTICS

SymbolParameterMinimum SpecificationUnitTest Method
NEND ( 1 )Endurance10,000CyclesJEDEC Standard A117
TDR ( 1 )Data Retention100YearsJEDEC Standard A103
ILTH ( 1 )Latch Up100 + IDDmAJEDEC Standard 78

Absolute Maximum Ratings

  • Storage temperature...............................................................................................................................-65°C to +150°C
  • DC voltage on any pin to ground potential...........................................................................................-0.5V to VDD+0.5V
  • Transient voltage (<20 ns) on any pin to ground potential...................................................................-2.0V to VDD+2.0V
  • Package power dissipation capability (TA = 25°C)....................................................................................................1.0W
  • Surface mount solder reflow temperature.......................................................................................260°C for 10 seconds
  • Output short circuit current ( 1 ) ..................................................................................................................................50 mA

† NOTICE: Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

Note 1: Output shorted for no more than one second. No more than one output shorted at a time.

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