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TPD6E05U06RVZ

6-Channel ESD Protection TVS Array

The TPD6E05U06RVZ is a 6-channel esd protection tvs array from Texas Instruments. View the full TPD6E05U06RVZ datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official TPD6E05U06RVZ datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

Category

Diodes

Package

USON-14

TPD6E05U06RVZ Key Specifications

ParameterValue
PackageUSON-14 (RVZ)
Data Rateup to 6 Gbps
Channel Count6
ESD (CDM, JEDEC)±1500V
ESD (HBM, JEDEC)±4000V
Input Pin Voltage Range0V to 5.5V
IO Capacitance (Typical)0.42pF to 0.5pF
Leakage Current (Maximum)10nA
Storage Temperature Range-65°C to 155°C
Operating Temperature Range-40°C to +125°C
DC Breakdown Voltage (Minimum)6.5V
EFT Protection (IEC 61000-4-4, 5/50ns)80A
ESD Protection (IEC 61000-4-2 Air Gap)±15kV
ESD Protection (IEC 61000-4-2 Contact)±12kV
Peak Pulse Power (IEC 61000-4-5, 8/20µS)40W
Surge Protection (IEC 61000-4-5, 8/20µS)2.5A

TPD6E05U06RVZ Overview

Part: TPD6E05U06 (RVZ package; family TPD1E05U06 / TPD4E05U06 / TPD6E05U06) — Texas Instruments

Type: 6-Channel Unidirectional TVS ESD Protection Diode Array

Description: 6-channel, ultra-low-capacitance (0.47 pF typical) ESD protection array for super-speed interfaces up to 6 Gbps, with 5.5 V reverse stand-off voltage and IEC 61000-4-2 Level 4 protection (±12 kV contact, ±15 kV air).

Operating Conditions:

  • Input pin voltage (VIO): 0–5.5 V
  • Operating free-air temperature: -40 to 125 °C
  • Data rate: up to 6 Gbps

Absolute Maximum Ratings:

  • IEC 61000-4-4 EFT (5/50 ns): 80 A
  • IEC 61000-4-5 peak pulse current (8/20 μs): 2.5 A
  • IEC 61000-4-5 peak pulse power (8/20 μs): 40 W
  • Ambient operating temperature: -40 to 125 °C
  • Storage temperature: -65 to 155 °C

Key Specs:

  • Reverse stand-off voltage (VRWM): 5.5 V max (IIO < 10 μA)
  • Breakdown voltage (VBR): 6.5 V min, 8.5 V max (IIO = 1 mA)
  • Clamp voltage, I/O to GND (TLP): 10 V typ at 1 A; 14 V typ at 5 A
  • Clamp voltage, GND to I/O (TLP): 3 V typ at 1 A; 7 V typ at 5 A
  • Leakage current: 0.01 nA typ, 10 nA max (VIO = 2.5 V)
  • Dynamic resistance (RDYN): 0.8 Ω typ (RVZ package, GND to I/O)
  • Line capacitance (CL): 0.47 pF typ (RVZ, VIO = 2.5 V, f = 1 MHz)
  • Channel-to-channel capacitance: 0.01–0.06 pF (VBIAS = 2.5 V, f = 1 MHz)
  • ESD ratings (JEDEC, RVZ): HBM ±4000 V, CDM ±1500 V
  • Thermal resistance RθJA (RVZ): 197.9 °C/W

Features:

  • IEC 61000-4-2 Level 4 ESD protection (±12 kV contact, ±15 kV air)
  • IEC 61000-4-4 EFT protection of 80 A (5/50 ns)
  • IEC 61000-4-5 surge protection of 2.5 A (8/20 μs)
  • Low ESD clamping voltage
  • Ultra-low leakage current
  • Industrial temperature range of -40 to 125 °C
  • Straight-through routing packages

Applications:

  • HDMI 1.4b and HDMI 2.0
  • USB 3.0
  • MHL
  • LVDS interfaces
  • DisplayPort
  • PCI-Express
  • eSATA interfaces
  • V-by-One HS

Package:

  • RVZ (USON, 14 pins) for TPD6E05U06
  • Other family packages: DPY (X1SON, 2), DYA (SOD-523, 2), DQA (USON, 10)

TPD6E05U06RVZ Features

  • IEC 61000-4-2 level 4 ESD protection
  • -±12kV contact discharge
  • -±15kV air gap discharge
  • IEC 61000-4-4 EFT protection -80A (5/50ns)
  • IEC 61000-4-5 surge protection -2.5A (8/20μs)
  • IO capacitance 0.42pF to 0.5pF (typical)
  • DC breakdown voltage 6.5V (minimum)
  • Ultra low leakage current 10nA (maximum)
  • Low ESD clamping voltage
  • Industrial temperature range: -40°C to +125°C
  • Easy straight-through routing packages
  • Industry standard SOD-523 package (1.60mm × 0.80mm × 0.65mm)

TPD6E05U06RVZ Applications

Simplified Schematic

TPD6E05U06RVZ Pin Configuration

Figure 4-1. DPY Package 2-Pin X1SON (Top View) Figure 4-2. DYA Package 2-Pin SOD-523 (Top View)

TPD6E05U06RVZ Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETERPARAMETERTEST CONDITIONMINTYPMAXUNIT
INPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCEINPUT - OUTPUT RESISTANCE
V RWMReverse stand-off voltageI IO < 10 μA5.5V
V BRBreak-down voltageI IO = 1 mA6.58.5V
V ClampClamp voltageI PP = 1 A, TLP, from I/O to GND (1)10V
V ClampClamp voltageI PP = 5 A, TLP, from I/O to GND (1)14V
V ClampClamp voltageI PP = 1 A, TLP, from GND to I/O (1)3V
V ClampClamp voltageI PP = 5 A, TLP, from GND to I/O (1)7V
I LEAKLeakage currentV IO = 2.5 V0.0110nA
R DYNDYA packageI/O to GND (2)0.8Ω
R DYNDYA packageGND to I/O (2)0.8Ω
R DYNDYA packageI/O to GND (2)0.8Ω
R DYNDYA packageGND to I/O (2)0.7Ω
R DYNDYA packageI/O to GND (2)0.8Ω
R DYNDQA packageGND to I/O (2)0.8Ω
R DYNDYA packageI/O to GND (2)0.8Ω
R DYNRVZ packageGND to I/O (2)0.8Ω
CAPACITANCECAPACITANCECAPACITANCECAPACITANCECAPACITANCECAPACITANCECAPACITANCECAPACITANCE
C LLine capacitance (3)V IO = 2.5 V; ƒ = 1 MHz , I/O to GNDTPD1E05U06 DPY package0.42pF
C LLine capacitance (3)V IO = 2.5 V; ƒ = 1 MHz , I/O to GNDTPD1E05U06 DYA package0.42pF
C LLine capacitance (3)V IO = 2.5 V; ƒ = 1 MHz , I/O to GNDTPD4E05U06 DQA package0.5pF
C LLine capacitance (3)V IO = 2.5 V; ƒ = 1 MHz , I/O to GNDTPD6E05U06 RVZ package0.47pF
Δ C IO- TO-GNDVariation of input capacitanceGND Pin = 0 V, f = 1 MHz, VBIAS = 2.5 V, Channel x pin to GND - channel y pin to GNDGND Pin = 0 V, f = 1 MHz, VBIAS = 2.5 V, Channel x pin to GND - channel y pin to GND0.05 0.07pF

TPD6E05U06RVZ Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MINMAXUNIT
Electrical Fast Transient (2) (3)IEC 61000-4-4 (5/50ns)80A
Peak Pulse (2) (3)IEC 61000-4-5 Current (8/20us)2.5A
Peak Pulse (2) (3)IEC 61000-4-5 Power (8/20us)40W
T AAmbient Operating Temperature-40125°C
T stgStorage Temperature-65155°C

over operating free-air temperature range (unless otherwise noted)

MINNOMMAXUNIT
V IOInput pin voltage05.5V
T AOperating free-air temperature-40125°C

TPD6E05U06RVZ Thermal Information

THERMAL METRIC (1)THERMAL METRIC (1)TPD1E05U06 - DPY (X1SON) - 2 PINSTPD1E05U06 - DYA (SOD523) - 2 PINSTPD4E05U06 - DQA (USON) - 10 PINSTPD6E05U06 - RVZ (USON) - 14 PINSUNIT
R θJAJunction-to-ambient thermal resistance697.3772.1327197.9°C/W
R θJC(top)Junction-to-case (top) thermal resistance471444.6189.5119.1°C/W
R θJBJunction-to-board thermal resistance575.9540.4257.792.6°C/W
Ψ JTJunction-to-top characterization parameter175.7159.960.922°C/W
Ψ JBJunction-to-board characterization parameter575.1533.925791.6°C/W

TPD6E05U06RVZ Typical Application

The TPDxE05U06 is a diode type TVS which is typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.

TPD6E05U06RVZ Package Information

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
TPD1E05U06DYATexas InstrumentsSOD-523
TPD6E05U06Texas InstrumentsUSON-14
TPD6E05U06RVZRTexas Instruments14-UFDFN
TPD6E05U06RVZR.BTexas InstrumentsUSON-14

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
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  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll Texas Instruments datasheets (2,418)

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