TPD2E009
ESD Protection Diode ArrayThe TPD2E009 is a esd protection diode array from Texas Instruments. View the full TPD2E009 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official TPD2E009 datasheet (PDF) — the source this page was extracted from.
Manufacturer
Texas InstrumentsCategory
DiodesTPD2E009 Key Specifications
| Parameter | Value |
|---|---|
| Applications | Ethernet, HDMI |
| Current - Peak Pulse (10/1000µs) | 1A (8/20µs) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power - Peak Pulse | 45W |
| Power Line Protection | Yes |
| Supplier Device Package | SOT-23-3 |
| Type | Zener |
| Unidirectional Channels | 2 |
| Voltage - Breakdown (Min) | 7V |
| Voltage - Clamping (Max) @ Ipp | 8V |
| Voltage - Reverse Standoff (Typ) | 5.5V (Max) |
TPD2E009 Overview
Part: TPD2E009DBZR — Texas Instruments
Type: 2-Channel ESD Protection TVS Diode Array (High-Speed Differential)
Description: 2-channel unidirectional TVS for high-speed differential lines, supporting up to 6 Gbps with ±8 kV IEC 61000-4-2 contact/air-gap ESD protection, 5 A (8/20 μs) surge rating, and 0.9 pF typical I/O capacitance in the DBZ package.
Operating Conditions:
- Supply voltage: not applicable (passive device); operating voltage on I/O pins 0–5.5 V
- Operating temperature: -40 to 85 °C
- Maximum data rate: 6 Gbps
Absolute Maximum Ratings:
- I/O voltage tolerance: 0 to 6 V
- Peak pulse current (tp = 8/20 μs), D+/D- pins: 5 A
- Peak pulse power (tp = 8/20 μs): 45 W
- Storage temperature: -65 to 125 °C
Key Specs:
- Reverse stand-off voltage (VRWM): 5.5 V max
- Breakdown voltage (VBR): 7 V min at IIO = 1 mA
- Clamp voltage (VCLAMP): 8 V max at IIO = 1 A
- Dynamic resistance (RDYN): 1 Ω typ at I = 1 A
- I/O capacitance (CIO): 0.9 pF typ (DBZ), 0.7 pF typ (DRT), at VIO = 2.5 V, f = 10 MHz
- I/O leakage current (IIO): 0.01 μA typ, 0.1 μA max at VIO = 2.5 V
- Diode forward voltage (VD): 0.6 / 0.8 / 0.95 V (min/typ/max) at 8 mA
- ESD ratings: HBM ±15 kV, CDM ±1 kV, IEC 61000-4-2 contact and air-gap ±8 kV
- Thermal resistance RθJA: 461.8 °C/W (DBZ), 610 °C/W (DRT)
Features:
- Supports data rates up to 6 Gbps
- IEC 61000-4-2 ESD protection: ±8 kV contact and ±8 kV air-gap
- IEC 61000-4-5 surge protection: 5 A (8/20 μs)
- 0.05 pF matching capacitance between the differential signal pair
- Dual matching TVS diodes for HDMI, LVDS, SATA, Ethernet, or USB lines
- Flow-through pin mapping adds no skew from board layout
- Space-saving DRT and DBZ package options
Applications:
- Notebooks
- Set-top boxes
- Portable computers
- DVD players
- Media players
- HDMI 2.0, USB 3.0, eSATA, Ethernet interfaces
Package:
- SOT-23 (DBZ), 3 pins, 2.92 mm × 1.30 mm
- SOT (DRT), 3 pins, 1.00 mm × 0.80 mm
TPD2E009 Applications
- End Equipment:
- -Notebooks
- -Set-Top Boxes
- -Portable Computers
- -DVD Players
- -Media Players
- Interfaces:
- -HDMI 2.0
- -USB 3.0
- -eSATA
- -Ethernet
TPD2E009 Pin Configuration
DBZ, DRT Packages 3-Pin SOT TOP VIEW
TPD2E009 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
| PARAMETER | PARAMETER | TEST CONDITIONS | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|---|
| V RWM | Reverse stand-off voltage | D+, D- pins to ground | 5.5 | V | |||
| V CLAMP | Clamp voltage | D+, D- pins to ground, | I IO = 1 A | 8 | V | ||
| I IO | Current from I/O port to supply pins | V IO = 2.5 V | 0.01 | 0.1 | μ A | ||
| V D | Diode forward voltage | D+, D- pins, lower clamp diode, | V IO = 2.5 V, I D = 8 mA | 0.6 | 0.8 | 0.95 | V |
| V D | Diode forward voltage | D+, D- pins, upper clamp diode, DRY package | V CC = 0 V, I D = -8 mA | 0.6 | 0.8 | 0.95 | V |
| R DYN | Dynamic resistance | D+, D- pins, | I = 1 A | 1 | Ω | ||
| C IO | I/O capacitance | D+, D- pins, DBZ Package | V IO = 2.5 V, f = 10 MHz | 0.9 | pF | ||
| C IO | I/O capacitance | D+, D- pins, DRT Package | V IO = 2.5 V, f = 10 MHz | 0.7 | pF | ||
| V BR | Break-down voltage | I IO = 1 mA | 7 | V |
TPD2E009 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Operating temperature | Operating temperature | -40 | 85 | °C |
| I/O voltage tolerance | I/O voltage tolerance | 0 | 6 | V |
| Peak pulse current (t p = 8/20 μ s) | D+, D- pins | 5 | A | |
| Peak pulse power (t p = 8/20 μ s) | Peak pulse power (t p = 8/20 μ s) | 45 | W | |
| Storage temperature, T stg | Storage temperature, T stg | -65 | 125 | °C |
TPD2E009 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| Operating free-air temperature, T A | -40 | 85 | °C | ||
| Operating voltage | Pin 1 or 2 to 3 or Pin 3 to 1 or 2 | 0 | 5.5 | V |
TPD2E009 Thermal Information
| THERMAL METRIC (1) | TPD2E009 - DBZ (SOT) - 3 PINS | TPD2E009 - DRT (SOT) - 3 PINS | UNIT | |
|---|---|---|---|---|
| R θ JA | Junction-to-ambient thermal resistance | 461.8 | 610 | °C/W |
| R θ JC(top) | Junction-to-case (top) thermal resistance | 216.2 | 288 | °C/W |
| R θ JB | Junction-to-board thermal resistance | 195.6 | 118.4 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 70.1 | 20.2 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 193.7 | 116.4 | °C/W |
TPD2E009 Typical Application
The TPD2E009 device is a diode-array type TVS typically used to provide a path to ground for dissipating ESD events on high-speed signal lines between a human-interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a tolerable level to the protected IC.
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| TPD2E009DBZR | Texas Instruments | TO-236-3, SC-59, SOT-23-3 |
| TPD2E009DRTR | Texas Instruments | SOT-723 |
Other Diodes
- CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
- SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
- BSD3A311V – Brightking, ESD Protection Diode
- CH213K – WCH, Low Dropout Ideal Diode Chip
- VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- USBLC6-2SC6 – STMicroelectronics, ESD Protection Device
All Diodes datasheetsAll Texas Instruments datasheets (2,437)
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