TPD2E009DBZR

ESD Protection Diode Array

The TPD2E009DBZR is a esd protection diode array from Texas Instruments. View the full TPD2E009DBZR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Key Specifications

Parameter	Value
Applications	Ethernet, HDMI
Current - Peak Pulse (10/1000µs)	1A (8/20µs)
Mounting Type	Surface Mount
Operating Temperature	-40°C ~ 85°C (TA)
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Peak Pulse	45W
Power Line Protection	Yes
Supplier Device Package	SOT-23-3
Type	Zener
Unidirectional Channels	2
Voltage - Breakdown (Min)	7V
Voltage - Clamping (Max) @ Ipp	8V
Voltage - Reverse Standoff (Typ)	5.5V (Max)

Overview

Part: TPD2E009 — Texas Instruments

Type: 2-Channel ESD Protection Diode Array

Description: A 2-channel ESD protection solution for high-speed differential interfaces, supporting data rates up to 6 Gbps with low capacitance and robust IEC 61000-4-2 ESD and IEC 61000-4-5 surge protection.

Operating Conditions:

Supply voltage: 0–5.5 V
Operating temperature: -40 to 85 °C
Max data rate: 6 Gbps

Absolute Maximum Ratings:

Max I/O voltage tolerance: 6 V
Max peak pulse current (8/20 μs): 5 A
Max storage temperature: 125 °C

Key Specs:

Reverse stand-off voltage (V_RWM): 5.5 V
Clamp voltage (V_CLAMP): 8 V (I_IO = 1 A)
I/O capacitance (C_IO, DRT package): 0.7 pF (Typ, V_IO = 2.5 V, f = 10 MHz)
I/O capacitance (C_IO, DBZ package): 0.9 pF (Typ, V_IO = 2.5 V, f = 10 MHz)
Dynamic resistance (R_DYN): 1 Ω (Typ, I = 1 A)
Break-down voltage (V_BR): 7 V (Min, I_IO = 1 mA)
Current from I/O port to supply pins (I_IO): 0.01 μA (Typ, V_IO = 2.5 V)

Features:

Supports Data Rates up to 6 Gbps
IEC 61000-4-2 ESD Protection (±8-kV Contact, ±8-kV Air-Gap)
IEC 61000-4-5 Surge Protection (5 A (8/20 μs))
Low Capacitance (0.7-pF Typ for DRT, 0.9-pF Typ for DBZ)
0.05-pF Matching Capacitance Between the Differential Signal Pair
Dual-Matching TVS Diodes
Flow-Through Pin Mapping

Applications:

Notebooks
Set-Top Boxes
Portable Computers
DVD Players
Media Players
HDMI 2.0, USB 3.0, eSATA, Ethernet Interfaces

Package:

SOT-23 (DBZ, 2.92 mm × 1.30 mm)
SOT-9X3 (DRT, 1.00 mm × 0.80 mm)

Features

1 · Supports Data Rates up to 6 Gbps
IEC 61000-4-2 ESD Protection
-±8-kV Contact Discharge
-±8-kV Air-Gap Discharge
IEC 61000-4-5 Surge Protection
-5 A (8/20 μs)
Low Capacitance
-DRT: 0.7-pF (Typ)
-DBZ: 0.9-pF (Typ)
0.05-pF Matching Capacitance Between the Differential Signal Pair
Dual-Matching TVS Diodes to Protect the Differential Data and Clock Lines of HDMI, LVDS, SATA, Ethernet, or USB Interfaces
Space-Saving DRT and DBZ Package Options
Flow-Through Pin Mapping for the High-Speed Lines Ensures Zero Additional Skew Due to Board Layout While Placing the ESD-Protection Chip Near the Connector

Applications

End Equipment:
-Notebooks
-Set-Top Boxes
-Portable Computers
-DVD Players
-Media Players
Interfaces:
-HDMI 2.0
-USB 3.0
-eSATA
-Ethernet

Pin Configuration

DBZ, DRT Packages 3-Pin SOT TOP VIEW

Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER	PARAMETER	TEST CONDITIONS	TEST CONDITIONS	MIN	TYP	MAX	UNIT
V RWM	Reverse stand-off voltage	D+, D- pins to ground				5.5	V
V CLAMP	Clamp voltage	D+, D- pins to ground,	I IO = 1 A			8	V
I IO	Current from I/O port to supply pins	V IO = 2.5 V			0.01	0.1	μ A
V D	Diode forward voltage	D+, D- pins, lower clamp diode,	V IO = 2.5 V, I D = 8 mA	0.6	0.8	0.95	V
V D	Diode forward voltage	D+, D- pins, upper clamp diode, DRY package	V CC = 0 V, I D = -8 mA	0.6	0.8	0.95	V
R DYN	Dynamic resistance	D+, D- pins,	I = 1 A		1		Ω
C IO	I/O capacitance	D+, D- pins, DBZ Package	V IO = 2.5 V, f = 10 MHz		0.9		pF
C IO	I/O capacitance	D+, D- pins, DRT Package	V IO = 2.5 V, f = 10 MHz		0.7		pF
V BR	Break-down voltage	I IO = 1 mA		7			V

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Operating temperature	Operating temperature	-40	85	°C
I/O voltage tolerance	I/O voltage tolerance	0	6	V
Peak pulse current (t p = 8/20 μ s)	D+, D- pins		5	A
Peak pulse power (t p = 8/20 μ s)	Peak pulse power (t p = 8/20 μ s)		45	W
Storage temperature, T stg	Storage temperature, T stg	-65	125	°C

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
Operating free-air temperature, T A		-40		85	°C
Operating voltage	Pin 1 or 2 to 3 or Pin 3 to 1 or 2	0		5.5	V

Thermal Information

		TPD2E009	TPD2E009
THERMAL METRIC (1)		DBZ (SOT)	DRT (SOT)
		3 PINS	3 PINS
R θ JA	Junction-to-ambient thermal resistance	461.8	610
R θ JC(top)	Junction-to-case (top) thermal resistance	216.2	288
R θ JB	Junction-to-board thermal resistance	195.6	118.4
ψ JT	Junction-to-top characterization parameter	70.1	20.2
ψ JB	Junction-to-board characterization parameter	193.7	116.4

Typical Application

The TPD2E009 device is a diode-array type TVS typically used to provide a path to ground for dissipating ESD events on high-speed signal lines between a human-interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a tolerable level to the protected IC.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
TPD2E009	Texas Instruments	—
TPD2E009DRTR	Texas Instruments	SOT-723

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