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TPD2E009DBZR

ESD Protection Diode Array

The TPD2E009DBZR is a esd protection diode array from Texas Instruments. View the full TPD2E009DBZR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

TPD2E009DBZR shares its datasheet with TPD2E009, whose page lists every part number it covers.

Official TPD2E009DBZR datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

Category

Diodes

Package

TO-236-3, SC-59, SOT-23-3

Lifecycle

Active

TPD2E009DBZR Key Specifications

ParameterValue
ApplicationsEthernet, HDMI
Current - Peak Pulse (10/1000µs)1A (8/20µs)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
Package / CaseTO-236-3, SC-59, SOT-23-3
Power - Peak Pulse45W
Power Line ProtectionYes
Supplier Device PackageSOT-23-3
TypeZener
Unidirectional Channels2
Voltage - Breakdown (Min)7V
Voltage - Clamping (Max) @ Ipp8V
Voltage - Reverse Standoff (Typ)5.5V (Max)

TPD2E009DBZR Overview

Part: TPD2E009DBZR — Texas Instruments

Type: 2-Channel ESD Protection TVS Diode Array (High-Speed Differential)

Description: 2-channel unidirectional TVS for high-speed differential lines, supporting up to 6 Gbps with ±8 kV IEC 61000-4-2 contact/air-gap ESD protection, 5 A (8/20 μs) surge rating, and 0.9 pF typical I/O capacitance in the DBZ package.

Operating Conditions:

  • Supply voltage: not applicable (passive device); operating voltage on I/O pins 0–5.5 V
  • Operating temperature: -40 to 85 °C
  • Maximum data rate: 6 Gbps

Absolute Maximum Ratings:

  • I/O voltage tolerance: 0 to 6 V
  • Peak pulse current (tp = 8/20 μs), D+/D- pins: 5 A
  • Peak pulse power (tp = 8/20 μs): 45 W
  • Storage temperature: -65 to 125 °C

Key Specs:

  • Reverse stand-off voltage (VRWM): 5.5 V max
  • Breakdown voltage (VBR): 7 V min at IIO = 1 mA
  • Clamp voltage (VCLAMP): 8 V max at IIO = 1 A
  • Dynamic resistance (RDYN): 1 Ω typ at I = 1 A
  • I/O capacitance (CIO): 0.9 pF typ (DBZ), 0.7 pF typ (DRT), at VIO = 2.5 V, f = 10 MHz
  • I/O leakage current (IIO): 0.01 μA typ, 0.1 μA max at VIO = 2.5 V
  • Diode forward voltage (VD): 0.6 / 0.8 / 0.95 V (min/typ/max) at 8 mA
  • ESD ratings: HBM ±15 kV, CDM ±1 kV, IEC 61000-4-2 contact and air-gap ±8 kV
  • Thermal resistance RθJA: 461.8 °C/W (DBZ), 610 °C/W (DRT)

Features:

  • Supports data rates up to 6 Gbps
  • IEC 61000-4-2 ESD protection: ±8 kV contact and ±8 kV air-gap
  • IEC 61000-4-5 surge protection: 5 A (8/20 μs)
  • 0.05 pF matching capacitance between the differential signal pair
  • Dual matching TVS diodes for HDMI, LVDS, SATA, Ethernet, or USB lines
  • Flow-through pin mapping adds no skew from board layout
  • Space-saving DRT and DBZ package options

Applications:

  • Notebooks
  • Set-top boxes
  • Portable computers
  • DVD players
  • Media players
  • HDMI 2.0, USB 3.0, eSATA, Ethernet interfaces

Package:

  • SOT-23 (DBZ), 3 pins, 2.92 mm × 1.30 mm
  • SOT (DRT), 3 pins, 1.00 mm × 0.80 mm

TPD2E009DBZR Applications

  • End Equipment:
  • -Notebooks
  • -Set-Top Boxes
  • -Portable Computers
  • -DVD Players
  • -Media Players
  • Interfaces:
  • -HDMI 2.0
  • -USB 3.0
  • -eSATA
  • -Ethernet

TPD2E009DBZR Pin Configuration

DBZ, DRT Packages 3-Pin SOT TOP VIEW

TPD2E009DBZR Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETERPARAMETERTEST CONDITIONSTEST CONDITIONSMINTYPMAXUNIT
V RWMReverse stand-off voltageD+, D- pins to ground5.5V
V CLAMPClamp voltageD+, D- pins to ground,I IO = 1 A8V
I IOCurrent from I/O port to supply pinsV IO = 2.5 V0.010.1μ A
V DDiode forward voltageD+, D- pins, lower clamp diode,V IO = 2.5 V, I D = 8 mA0.60.80.95V
V DDiode forward voltageD+, D- pins, upper clamp diode, DRY packageV CC = 0 V, I D = -8 mA0.60.80.95V
R DYNDynamic resistanceD+, D- pins,I = 1 A1Ω
C IOI/O capacitanceD+, D- pins, DBZ PackageV IO = 2.5 V, f = 10 MHz0.9pF
C IOI/O capacitanceD+, D- pins, DRT PackageV IO = 2.5 V, f = 10 MHz0.7pF
V BRBreak-down voltageI IO = 1 mA7V

TPD2E009DBZR Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

MINMAXUNIT
Operating temperatureOperating temperature-4085°C
I/O voltage toleranceI/O voltage tolerance06V
Peak pulse current (t p = 8/20 μ s)D+, D- pins5A
Peak pulse power (t p = 8/20 μ s)Peak pulse power (t p = 8/20 μ s)45W
Storage temperature, T stgStorage temperature, T stg-65125°C

over operating free-air temperature range (unless otherwise noted)

MINNOMMAXUNIT
Operating free-air temperature, T A-4085°C
Operating voltagePin 1 or 2 to 3 or Pin 3 to 1 or 205.5V

TPD2E009DBZR Thermal Information

THERMAL METRIC (1)TPD2E009 - DBZ (SOT) - 3 PINSTPD2E009 - DRT (SOT) - 3 PINSUNIT
R θ JAJunction-to-ambient thermal resistance461.8610°C/W
R θ JC(top)Junction-to-case (top) thermal resistance216.2288°C/W
R θ JBJunction-to-board thermal resistance195.6118.4°C/W
ψ JTJunction-to-top characterization parameter70.120.2°C/W
ψ JBJunction-to-board characterization parameter193.7116.4°C/W

TPD2E009DBZR Typical Application

The TPD2E009 device is a diode-array type TVS typically used to provide a path to ground for dissipating ESD events on high-speed signal lines between a human-interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a tolerable level to the protected IC.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
TPD2E009Texas Instruments—
TPD2E009DRTRTexas InstrumentsSOT-723

Other Diodes

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  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll Texas Instruments datasheets (2,437)

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