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SMBJ15CA-E3/52

Bi-directional TVS Diode

The SMBJ15CA-E3/52 is a bi-directional tvs diode from Vishay Intertechnology. View the full SMBJ15CA-E3/52 datasheet below including key specifications.

Official SMBJ15CA-E3/52 datasheet (PDF) — the source this page was extracted from.

Category

Diodes

Package

DO-214AA

Lifecycle

Active

SMBJ15CA-E3/52 Key Specifications

ParameterValue
ApplicationsGeneral Purpose
Bidirectional Channels1
Breakdown Voltage17.6 V
Case/PackageSMB
China RoHSNon-Compliant
Clamping Voltage24.4 V
Current - Peak Pulse (10/1000µs)24.6A
DirectionBidirectional
Element ConfigurationSingle
ESD ProtectionNo
Height2.44 mm
Introduction Date2006-07-24
Lead FreeLead Free
Leakage Current1 µA
Length4.57 mm
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Breakdown Voltage18.5 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5 W
Max Reverse Leakage Current1 µA
Max Surge Current24.6 A
Min Breakdown Voltage16.7 V
Min Operating Temperature-55 °C
MountSurface Mount
Mounting TypeSurface Mount
Number of Channels1
Number of Elements1
Number of Pins2
Number of Terminals2
Operating Supply Voltage15 V
Operating Temperature-55°C ~ 150°C (TJ)
Package / CaseDO-214AA, SMB
PackagingCut Tape
Peak Pulse Current24.6 A
Peak Pulse Power 600 W
Peak Reverse Current1 µA
PolarityBidirectional
Power - Peak Pulse600W
Power Dissipation600 W
Power Line ProtectionNo
Power Rating600 W
Radiation HardeningNo
REACH SVHCNo
Reverse Breakdown Voltage16.7 V
Reverse Standoff Voltage15 V
RoHSCompliant
Schedule B8541100080, 8541100080|8541100080|8541100080|8541100080|8541100080
Supplier Device PackageDO-214AA (SMBJ)
TerminationSMD/SMT
Test Current1 mA
TypeZener
Voltage - Breakdown (Min)16.7V
Voltage - Clamping (Max) @ Ipp24.4V
Voltage - Reverse Standoff (Typ)15V
Voltage Rating (DC)15 V
Width3.94 mm

SMBJ15CA-E3/52 Overview

Part: SMBJ15CA-E3/52 — Vishay

Type: Transient Voltage Suppressor (TVS) Diode

Description: 600 W bidirectional surface-mount transient voltage suppressor with a 15 V standoff voltage in a DO-214AA (SMB) package.

Operating Conditions:

  • Stand-off voltage (V_WM): 15 V
  • Operating junction temperature: -55 to +150 °C

Absolute Maximum Ratings:

  • Peak pulse power dissipation (10/1000 μs waveform): 600 W
  • Peak pulse current (10/1000 μs waveform): 24.6 A
  • Peak forward surge current (8.3 ms single half sine-wave, uni-directional only): 100 A
  • Max junction/storage temperature: -55 to +150 °C

Key Specs:

  • Breakdown voltage (V_BR min): 16.7 V at I_T = 1.0 mA
  • Breakdown voltage (V_BR max): 18.5 V at I_T = 1.0 mA
  • Reverse stand-off voltage (V_WM): 15 V
  • Maximum reverse leakage (I_D): 1.0 μA at V_WM = 15 V
  • Maximum clamping voltage (V_C): 24.4 V at I_PPM = 24.6 A
  • Maximum peak pulse surge current (I_PPM): 24.6 A (10/1000 μs waveform)
  • Typical thermal resistance, junction to ambient (R_θJA): 100 °C/W
  • Typical thermal resistance, junction to lead (R_θJL): 20 °C/W

Features:

  • Low profile package
  • Ideal for automated placement
  • Glass passivated chip junction
  • 600 W peak pulse power capability with a 10/1000 μs waveform
  • Excellent clamping capability
  • Very fast response time
  • Low incremental surge resistance
  • Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C

Applications:

  • Protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFETs, and sensor signal lines
  • Consumer electronics
  • Computer and telecommunication systems
  • Industrial equipment
  • Automotive electronics

Package:

  • DO-214AA (SMB J-Bend)

SMBJ15CA-E3/52 Features

  • Low profile package
  • Ideal for automated placement
  • Glass passivated chip junction
  • Available in uni-directional and bi-directional
  • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
  • Excellent clamping capability
  • Very fast response time
  • Low incremental surge resistance
  • Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C
  • Solder dip 260 °C, 40 seconds
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

SMBJ15CA-E3/52 Applications

Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication.

SMBJ15CA-E3/52 Typical Application

Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication.

SMBJ15CA-E3/52 Package Information

Case:

DO-214AA (SMBJ)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified)

Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)
PARAMETERSYMBOLVALUEUNIT
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (Fig. 1)P PPM600W
Peak pulse current with a 10/1000 μs waveform (1)I PPMSee next tableA
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)I FSM100A
Operating junction and storage temperature rangeT J , T STG- 55 to + 150°C

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
SMBJ15Vishay General Semiconductor - Diodes DivisionDO-214AA
SMBJ150Vishay General Semiconductor - Diodes DivisionDO-214AA
SMBJ150AVishay General Semiconductor - Diodes DivisionDO-214AA (SMB J-Bend)
SMBJ15AVishay General Semiconductor - Diodes DivisionDO-214AA

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll Vishay Intertechnology datasheets (32)

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