SMBJ150

Unidirectional TVS Diode

The SMBJ150 is a unidirectional tvs diode from Vishay General Semiconductor - Diodes Division. View the full SMBJ150 datasheet below including key specifications.

SMBJ150 shares its datasheet with SMBJ15CA-E3/52, whose page lists every part number it covers.

Official SMBJ150 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Vishay General Semiconductor - Diodes Division

SMBJ150 Key Specifications

Parameter	Value
Test Current (IT)	1.0 mA
Device Marking Code	PL
Stand-Off Voltage (VWM)	150 V
Moisture Sensitivity Level	MSL 1 (J-STD-020C)
Peak Pulse Power (10/1000 μS)	600 W
Breakdown Voltage (VBR) At 1 MA	167 V min to 204 V max
Max Reverse Leakage (ID) At VWM	1.0 μA
Max Clamping Voltage (VC) At IPPM	268 V
Peak Forward Surge Current (IFSM)	100 A (uni-directional only)
Max Peak Pulse Surge Current (IPPM)	2.2 A
Thermal Resistance Junction To Lead	20 °C/W
Thermal Resistance Junction To Ambient	100 °C/W
Operating Junction And Storage Temperature	-55°C to +150°C

SMBJ150 Overview

Part: SMBJ15CA-E3/52 — Vishay

Type: Transient Voltage Suppressor (TVS) Diode

Description: 600 W bidirectional surface-mount transient voltage suppressor with a 15 V standoff voltage in a DO-214AA (SMB) package.

Operating Conditions:

Stand-off voltage (V_WM): 15 V
Operating junction temperature: -55 to +150 °C

Absolute Maximum Ratings:

Peak pulse power dissipation (10/1000 μs waveform): 600 W
Peak pulse current (10/1000 μs waveform): 24.6 A
Peak forward surge current (8.3 ms single half sine-wave, uni-directional only): 100 A
Max junction/storage temperature: -55 to +150 °C

Key Specs:

Breakdown voltage (V_BR min): 16.7 V at I_T = 1.0 mA
Breakdown voltage (V_BR max): 18.5 V at I_T = 1.0 mA
Reverse stand-off voltage (V_WM): 15 V
Maximum reverse leakage (I_D): 1.0 μA at V_WM = 15 V
Maximum clamping voltage (V_C): 24.4 V at I_PPM = 24.6 A
Maximum peak pulse surge current (I_PPM): 24.6 A (10/1000 μs waveform)
Typical thermal resistance, junction to ambient (R_θJA): 100 °C/W
Typical thermal resistance, junction to lead (R_θJL): 20 °C/W

Features:

Low profile package
Ideal for automated placement
Glass passivated chip junction
600 W peak pulse power capability with a 10/1000 μs waveform
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C

Applications:

Protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFETs, and sensor signal lines
Consumer electronics
Computer and telecommunication systems
Industrial equipment
Automotive electronics

Package:

DO-214AA (SMB J-Bend)

SMBJ150 Features

Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C
Solder dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

SMBJ150 Applications

Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication.

SMBJ150 Typical Application

SMBJ150 Package Information

Case:

DO-214AA (SMBJ)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified)

Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)	MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)	MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)	MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)
PARAMETER	SYMBOL	VALUE	UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (Fig. 1)	P PPM	600	W
Peak pulse current with a 10/1000 μs waveform (1)	I PPM	See next table	A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)	I FSM	100	A
Operating junction and storage temperature range	T J , T STG	- 55 to + 150	°C

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
SMBJ15	Vishay General Semiconductor - Diodes Division	DO-214AA
SMBJ150A	Vishay General Semiconductor - Diodes Division	DO-214AA (SMB J-Bend)
SMBJ15A	Vishay General Semiconductor - Diodes Division	DO-214AA
SMBJ15CA-E3/52	Vishay Intertechnology	DO-214AA, SMB

Other Diodes

CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
BSD3A311V – Brightking, ESD Protection Diode
CH213K – WCH, Low Dropout Ideal Diode Chip
VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheets All Vishay General Semiconductor - Diodes Division datasheets (8)

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