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PMEG3020EP

Schottky barrier rectifier

The PMEG3020EP is a schottky barrier rectifier from Nexperia. View the full PMEG3020EP datasheet below including key specifications, pinout.

Official PMEG3020EP datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia

Category

Diodes

Package

SOD128

PMEG3020EP Key Specifications

ParameterValue
Reverse Voltage3
Forward voltage (VF)250 mV (typ) at IF = 0.5 A, Tj = 25 °C
Forward voltage (VF)310 mV (typ) at IF = 2 A, Tj = 25 °C
Reverse current (IR)130 μA (typ) at VR = 5 V, Tj = 25 °C
Reverse current (IR)1 mA (typ) at VR = 30 V, Tj = 25 °C
Diode capacitance (Cd)325 pF (typ) at VR = 1 V, f = 1 MHz
Total power dissipation (Ptot)2100 mW (max) at Tamb ≤ 25 °C (device mounted on FR4 PCB, single-sided copper, tin-plated and standard footprint)

PMEG3020EP Overview

Part: PMEG3020EP — Nexperia

Type: Schottky barrier rectifier

Description: 2 A, 30 V Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection.

Operating Conditions:

  • Reverse voltage: 30 V
  • Operating temperature: -55 to +150 °C
  • Max junction temperature: 150 °C

Absolute Maximum Ratings:

  • Max reverse voltage: 30 V
  • Max average forward current: 2 A
  • Max non-repetitive peak forward current: 50 A (square wave; tp = 8 ms)
  • Max junction temperature: 150 °C
  • Max storage temperature: 150 °C

Key Specs:

  • Forward voltage (VF): 250 mV (typ) at IF = 0.5 A, Tj = 25 °C
  • Forward voltage (VF): 310 mV (typ) at IF = 2 A, Tj = 25 °C
  • Reverse current (IR): 130 μA (typ) at VR = 5 V, Tj = 25 °C
  • Reverse current (IR): 1 mA (typ) at VR = 30 V, Tj = 25 °C
  • Diode capacitance (Cd): 325 pF (typ) at VR = 1 V, f = 1 MHz
  • Total power dissipation (Ptot): 2100 mW (max) at Tamb ≤ 25 °C (device mounted on FR4 PCB, single-sided copper, tin-plated and standard footprint)

Features:

  • Average forward current: IF(AV) ≤ 2 A
  • Reverse voltage: VR ≤ 30 V
  • Low forward voltage
  • High power capability due to clip-bond technology
  • AEC-Q101 qualified
  • Small and flat lead SMD plastic package

Applications:

  • Low voltage rectification
  • High efficiency DC-to-DC conversion
  • Switch Mode Power Supply (SMPS)
  • Reverse polarity protection
  • Low power consumption applications

Package:

  • SOD128 (2 leads)

PMEG3020EP Features

  • n Average forward current: IF(AV) £ 2 A
  • n Reverse voltage: VR £ 30 V
  • n Low forward voltage
  • n High power capability due to clip-bond technology
  • n AEC-Q101 qualified
  • n Small and flat lead SMD plastic package

PMEG3020EP Applications

  • n Low voltage rectification
  • n High efficiency DC-to-DC conversion
  • n Switch Mode Power Supply (SMPS)
  • n Reverse polarity protection
  • n Low power consumption applications

PMEG3020EP Pin Configuration

PMEG3020EP – SOD128 Package

Pin NumberPin NameTypeDescription
1Cathode–Cathode terminal
2Anode–Anode terminal

Notes

  • This is a 2-pin Schottky barrier rectifier diode in SOD128 surface-mounted package.
  • Pin 1 (Cathode) connects to the negative side; Pin 2 (Anode) connects to the positive side during forward bias.
  • Rated for 2 A average forward current and 30 V reverse voltage.
  • Marking code on device: "A3"

PMEG3020EP Thermal Information

SymbolParameterConditionsMinTypMaxUnit
R th(j-a)thermal resistance from junction to ambientin free air[1][2]
[3]--200K/W
[4]--120K/W
[5]--60K/W
R th(j-sp)thermal resistance from junction to solder point[6]--12K/W
  • [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 .

[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[6] Soldering point of cathode tab.

FR4 PCB, standard footprint

Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10 3

Zth(j-a)

(K/W)

10 2

10

1

1

10

3

10

duty cycle =

1

0.5

0.75

0.25

0.1

0.02

0

2

10

1

FR4 PCB, mounting pad for cathode 1 cm 2

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

0.33

0.2

0.05

0.01

10

006aab729

10 3

t p (s)

1

10

10 2

PMEG3020EP Package Information

2 A low VF MEGA Schottky barrier rectifier

PMEG3020EP Ordering Information

No ordering information found in the provided section.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
PMEG3020EP,115Nexperia USA Inc.SOD-128

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  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)

All Diodes datasheetsAll Nexperia datasheets (54)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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