PMEG3020EP,115
The PMEG3020EP,115 is an electronic component from Nexperia USA Inc.. View the full PMEG3020EP,115 datasheet below including key specifications.
Manufacturer
Nexperia USA Inc.
Category
Discrete Semiconductor Products
Package
SOD-128
Key Specifications
| Parameter | Value |
|---|---|
| Capacitance @ Vr, F | 325pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Reverse Leakage Current | 3 mA @ 30 V |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150°C (Max) |
| Package / Case | SOD-128 |
| Packaging | MouseReel |
| Clock Speed | Fast Recovery =< 500ns, > 200mA (Io) Hz |
| Standard Pack Qty | 3000 |
| Supplier Device Package | SOD-128/CFP5 |
| Diode Technology | Schottky |
| Reverse Voltage (Max) | 30 V |
| Forward Voltage (Max) | 360 mV @ 2 A |
Overview
Part: PMEG3020EP — Nexperia
Type: Schottky barrier rectifier
Description: 2 A, 30 V Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection.
Operating Conditions:
- Reverse voltage: 30 V
- Operating temperature: -55 to +150 °C
- Max junction temperature: 150 °C
Absolute Maximum Ratings:
- Max reverse voltage: 30 V
- Max average forward current: 2 A
- Max non-repetitive peak forward current: 50 A (square wave; tp = 8 ms)
- Max junction temperature: 150 °C
- Max storage temperature: 150 °C
Key Specs:
- Forward voltage (VF): 250 mV (typ) at IF = 0.5 A, Tj = 25 °C
- Forward voltage (VF): 310 mV (typ) at IF = 2 A, Tj = 25 °C
- Reverse current (IR): 130 μA (typ) at VR = 5 V, Tj = 25 °C
- Reverse current (IR): 1 mA (typ) at VR = 30 V, Tj = 25 °C
- Diode capacitance (Cd): 325 pF (typ) at VR = 1 V, f = 1 MHz
- Total power dissipation (Ptot): 2100 mW (max) at Tamb ≤ 25 °C (device mounted on FR4 PCB, single-sided copper, tin-plated and standard footprint)
Features:
- Average forward current: IF(AV) ≤ 2 A
- Reverse voltage: VR ≤ 30 V
- Low forward voltage
- High power capability due to clip-bond technology
- AEC-Q101 qualified
- Small and flat lead SMD plastic package
Applications:
- Low voltage rectification
- High efficiency DC-to-DC conversion
- Switch Mode Power Supply (SMPS)
- Reverse polarity protection
- Low power consumption applications
Package:
- SOD128 (2 leads)
Features
- n Average forward current: IF(AV) £ 2 A
- n Reverse voltage: VR £ 30 V
- n Low forward voltage
- n High power capability due to clip-bond technology
- n AEC-Q101 qualified
- n Small and flat lead SMD plastic package
Applications
- n Low voltage rectification
- n High efficiency DC-to-DC conversion
- n Switch Mode Power Supply (SMPS)
- n Reverse polarity protection
- n Low power consumption applications
Thermal Information
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|
| R th(j-a) | thermal resistance from junction to ambient | in free air | [1][2] | ||||
| [3] | - | - | 200 | K/W | |||
| [4] | - | - | 120 | K/W | |||
| [5] | - | - | 60 | K/W | |||
| R th(j-sp) | thermal resistance from junction to solder point | [6] | - | - | 12 | K/W |
- [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 .
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10 3
Zth(j-a)
(K/W)
10 2
10
1
1
10
3
10
duty cycle =
1
0.5
0.75
0.25
0.1
0.02
0
2
10
1
FR4 PCB, mounting pad for cathode 1 cm 2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
0.33
0.2
0.05
0.01
10
006aab729
10 3
t p (s)
1
10
10 2
Package Information
2 A low VF MEGA Schottky barrier rectifier
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| PMEG3020EP | Nexperia | SOD128 |
Get structured datasheet data via API
Get started free