MAX32660GTGBL

Part: MAX32660 — Maxim Integrated Type: Arm Cortex-M4 Processor with FPU-Based Microcontroller (MCU) Description: Ultra-low-power, cost-effective, highly-integrated 32-bit Arm Cortex-M4 processor with FPU microcontroller designed for battery-powered devices and wireless sensors, featuring 256KB Flash and 96KB SRAM.

Operating Conditions:

• Supply voltage: 1.71–3.63 V
• Operating temperature: -40 to +105 °C
• Max internal oscillator frequency: 96 MHz

Absolute Maximum Ratings:

• Max VDD supply voltage: +3.63 V
• Max total current into all GPIO combined (sink): 100 mA
• Max output current (sink) by any GPIO pin: 25 mA
• Max output current (source) by any GPIO pin: -25 mA
• Max storage temperature: +150 °C (long-term storage below +125°C recommended)

Key Specs:

• Flash Memory: 256 KB
• SRAM: 96 KB
• Instruction Cache: 16 KB
• Active Current (from Flash): 85 μA/MHz (at OVR = [10], 1.1V internal regulator, 96MHz)
• Backup Mode Current (96KB SRAM retained): 1.94 μA (at VDD = 1.8V, RTC enabled)
• Deep Sleep Mode Current (full data retention): 4.2 μA
• GPIO Operating Range: 3.6 V
• Sleep Mode Resume Time: 0.57 μs
• Deep Sleep Mode Resume Time: 150 μs

Features:

• High-Efficiency Microcontroller for Wearable Devices
• Internal Oscillator Operates up to 96MHz
• Memory Protection Unit (MPU)
• Low 1.1V VCORE Supply Voltage
• Internal LDO Provides Operation from Single Supply
• Power Management Maximizes Uptime for Battery Applications
• Optimal Peripheral Mix Provides Platform Scalability
• Up to 14 General-Purpose I/O Pins
• Up to Two SPI, Up to Two UARTs, Up to Two I2C (3.4Mbps High Speed), I2S
• Four-Channel Standard DMA Controller
• Three 32-Bit Timers, Watchdog Timer
• CMOS-Level 32.768kHz RTC Output

Applications:

• Sports Watches
• Fitness Monitors
• Wearable Medical Patches
• Portable Medical Devices
• Industrial Sensors
• IoT
• Optical Modules: QSFP-DD, QSFP, 400G

Package:

• 16-bump WLP (1.6mm x 1.6mm)
• 20-pin TQFN-EP (4mm x 4mm)
• 24-pin TQFN-EP (3mm x 3mm)

• High-Efficiency Microcontroller for Wearable Devices
• Internal Oscillator Operates up to 96MHz
• 256KB Flash Memory
• 96KB SRAM, Optionally Preserved in Lowest Power Backup Mode
• 16KB Instruction Cache
• Memory Protection Unit (MPU)
• Low 1.1V V CORE Supply Voltage
• 3.6V GPIO Operating Range
• Internal LDO Provides Operation from Single Supply
• Wide Operating Temperature: -40°C to +105°C
• Power Management Maximizes Uptime for Battery Applications
• 85μA/MHz Active Executing from Flash
• 2μA Full Memory Retention Power in Backup Mode at V DD = 1.8V
• 450nA Ultra-Low Power RTC at V DD = 1.8V
• Internal 80kHz Ring Oscillator
• Optimal Peripheral Mix Provides Platform Scalability
• Up to 14 General-Purpose I/O Pins
• Up to Two SPI
• I 2 S
• Up to Two UARTs
• Up to Two I 2 C, 3.4Mbps High Speed
• Four-Channel Standard DMA Controller
• Three 32-Bit Timers
• Watchdog Timer
• CMOS-Level 32.768kHz RTC Output

Ordering Information appears at end of data sheet.

MAX32660

• Sports Watches
• Fitness Monitors
• Wearable Medical Patches
• Portable Medical Devices
• Industrial Sensors
• IoT
• Optical Modules: QSFP-DD, QSFP, 400G

Arm and Cortex are registered trademarks of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

(Limits are 100% tested at T A = +25°C and T A = +105°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked GBD are guaranteed by design and not production tested. Specifications to the minimum operating temperature are guaranteed by design and are not production tested.)

• V CORE ................................................................-0.3V to +1.21V
• V DD .....................................................................-0.3V to +3.63V
• 32KIN, 32KOUT...........................................-0.3V to V DD + 0.3V
• RSTN, All GPIO except P0.[4-7, 9] ............-0.3V to V DD + 0.3V
• GPIO P0.[4-7, 9].........................................-0.3V to V DD + 0.3V
• Total Current into All GPIO Combined (sink)....................100mA
• V SS ...................................................................................100mA
• Output Current (sink) by Any GPIO Pin .............................25mA
• Output Current (source) by Any GPIO Pin........................-25mA

Continuous Package Power Dissipation

20 TQFN-EP (multilayer board) TA = +70°C

(derate 30.3mW/°C above +70°C)

.........................2424.2mW

Continuous Package Power Dissipation

24 TQFN-EP (multilayer board) T A = +70°C

(derate 16.3mW/°C above +70°C)

............................1305mW

Operating Temperature Range ......................... -40°C to +105°C

Storage Temperature Range ............................ -65°C to +150°C

Soldering Temperature (reflow) .......................................+260°C

Note: Long-term storage at +150°C is not recommended as this will reduce the lifetime of the flash storage. Please keep long-term storage of the part below +125°C.

Stresses beyond those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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