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STM32L011F4U6

The STM32L011F4U6 is an electronic component from STMicroelectronics. View the full STM32L011F4U6 datasheet below including pinout, electrical characteristics, absolute maximum ratings.

Manufacturer

STMicroelectronics

Category

Microcontrollers

Overview

The access line ultra-low-power STM32L011x3/4 family incorporates the high-performance Arm ® Cortex ® -M0+ 32-bit RISC core operating at a 32 MHz frequency, high-speed embedded memories (up to 16 Kbytes of Flash program memory, 512 bytes of data EEPROM and 2 Kbytes of RAM) plus an extensive range of enhanced I/Os and peripherals.

The STM32L011x3/4 devices provide high power efficiency for a wide range of performance. It is achieved with a large choice of internal and external clock sources, an internal voltage adaptation and several low-power modes.

The STM32L011x3/4 devices offer several analog features, one 12-bit ADC with hardware oversampling, two ultra-low-power comparators, several timers, one low-power timer (LPTIM), three general-purpose 16-bit timers, one RTC and one SysTick which can be used as timebases. They also feature two watchdogs, one watchdog with independent clock and window capability and one window watchdog based on bus clock.

Moreover, the STM32L011x3/4 devices embed standard and advanced communication interfaces: one I2C, one SPI, one USART, and a low-power UART (LPUART).

The STM32L011x3/4 also include a real-time clock and a set of backup registers that remain powered in Standby mode.

The ultra-low-power STM32L011x3/4 devices operate from a 1.8 to 3.6 V power supply (down to 1.65 V at power down) with BOR and from a 1.65 to 3.6 V power supply without BOR option. They are available in the -40 to +125 °C temperature range. A comprehensive set of power-saving modes allows the design of low-power applications.

Features

  • Ultra-low-power platform
  • -1.65 V to 3.6 V power supply
  • --40 to 125 °C temperature range
  • -0.23 μA Standby mode (2 wakeup pins)
  • -0.29 μA Stop mode (16 wakeup lines)
  • -0.54 μA Stop mode + RTC + 2 KB RAM retention
  • -Down to 76 μA/MHz in Run mode
  • -5 μs wakeup time (from Flash memory)
  • -41 μA 12-bit ADC conversion at 10 ksps
  • Core: Arm ® 32-bit Cortex ® -M0+
  • -From 32 kHz to 32 MHz max.
  • -0.95 DMIPS/MHz
  • Reset and supply management
  • -Ultra-safe, low-power BOR (brownout reset) with 5 selectable thresholds
  • -Ultralow power POR/PDR
  • -Programmable voltage detector (PVD)
  • Clock sources
  • -0 to 32 MHz external clock
  • -32 kHz oscillator for RTC with calibration
  • -High speed internal 16 MHz factory-trimmed RC (+/- 1%)
  • -Internal low-power 37 kHz RC
  • -Internal multispeed low-power 65 kHz to 4.2 MHz RC
  • -PLL for CPU clock
  • Pre-programmed bootloader
  • -USART, SPI supported
  • Development support
  • -Serial wire debug supported
  • Up to 28 fast I/Os (23 I/Os 5V tolerant)
  • Memories
  • -Up to 16 KB Flash memory with ECC
  • -2 KB RAM
  • -512 B of data EEPROM with ECC
  • -20-byte backup register
  • -Sector protection against R/W operation

Pin Configuration

PinNameTypeDescription
1PC14-OSC32_INI/Oalt: RCC_OSC32_IN
2PC15-OSC32_OUTI/Oalt: RCC_OSC32_OUT
3NRSTRST
4VDDAP
5PA0-CK_INI/Oalt: ADC_IN0, COMP1_INM, COMP1_OUT, LPTIM1_IN1, LPUART1_RX, RCC_CK_IN, RTC_TAMP2, SYS_WKUP1, TIM2_CH1, TIM2_ETR, USART2_CTS, USART2_RX
6PA1I/Oalt: ADC_IN1, COMP1_INP, I2C1_SMBA, LPTIM1_IN2, LPUART1_TX, TIM21_ETR, TIM2_CH2, USART2_DE, USART2_RTS
7PA4I/Oalt: ADC_IN4, COMP1_INM, COMP2_INM, COMP2_OUT, I2C1_SCL, LPTIM1_ETR, LPTIM1_IN1, LPUART1_TX, SPI1_NSS, TIM2_ETR, USART2_CK
8PA5I/Oalt: ADC_IN5, COMP1_INM, COMP2_INM, LPTIM1_IN2, SPI1_SCK, TIM2_CH1, TIM2_ETR
9PA6I/Oalt: ADC_IN6, COMP1_OUT, LPTIM1_ETR, LPUART1_CTS, SPI1_MISO
10PA7I/Oalt: ADC_IN7, COMP2_INP, COMP2_OUT, LPTIM1_OUT, SPI1_MOSI, TIM21_ETR, USART2_CTS
11PB1I/Oalt: ADC_IN9, LPTIM1_IN1, LPUART1_DE, LPUART1_RTS, SPI1_MOSI, SYS_VREF_OUT_PB1, TIM2_CH4, USART2_CK
12VSSP
13VDDP
14PA9I/Oalt: COMP1_OUT, I2C1_SCL, LPTIM1_OUT, RCC_MCO, TIM21_CH2, USART2_TX
15PA10I/Oalt: COMP1_OUT, I2C1_SDA, RTC_REFIN, TIM21_CH1, TIM2_CH3, USART2_RX
16PA13I/Oalt: COMP1_OUT, I2C1_SDA, LPTIM1_ETR, LPUART1_RX, SPI1_SCK, SYS_SWDIO
17PA14I/Oalt: COMP2_OUT, I2C1_SMBA, LPTIM1_OUT, LPUART1_TX, SPI1_MISO, SYS_SWCLK, USART2_TX
18PB6I/Oalt: COMP2_INP, I2C1_SCL, LPTIM1_ETR, LPUART1_TX, TIM2_CH3, USART2_TX
19PB7I/Oalt: COMP2_INP, I2C1_SDA, LPTIM1_IN2, LPUART1_RX, SYS_PVD_IN, TIM2_CH4, USART2_RX
20PB9-BOOT0I/O

Electrical Characteristics

The definition and values of input/output AC characteristics are given in Figure 25 and Table 52 , respectively.

Unless otherwise specified, the parameters given in Table 52 are derived from tests performed under ambient temperature and V DD supply voltage conditions summarized in Table 18 .

Table 52. I/O AC characteristics (1)(2)

OSPEEDRx [1:0] bit value (1)SymbolParameterConditionsMinMax (3)Unit
00f max(IO)outMaximum frequency (4)C L = 50 pF, V DD = 2.7 V to 3.6 V-400kHz
00f max(IO)outMaximum frequency (4)C L = 50 pF, V DD = 1.65 V to 2.7 V-100kHz
00t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 2.7 V to 3.6 V-125ns
00t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 1.65 V to 2.7 V-320ns
01f max(IO)outMaximum frequency (4)C L = 50 pF, V DD = 2.7 V to 3.6 V-2MHz
01f max(IO)outMaximum frequency (4)C L = 50 pF, V DD = 1.65 V to 2.7 V-0.6MHz
01t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 2.7 V to 3.6 V-30ns
01t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 1.65 V to 2.7 V-65ns
10F max(IO)outMaximum frequency (4)C L = 50 pF, V DD = 2.7 V to 3.6 V-10MHz
10F max(IO)outMaximum frequency (4)C L = 50 pF, V DD = 1.65 V to 2.7 V-2MHz
10t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 2.7 V to 3.6 V-13ns
10t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 1.65 V to 2.7 V-28ns
11F max(IO)outMaximum frequency (4)C L = 30 pF, V DD = 2.7 V to 3.6 V-35MHz
11F max(IO)outMaximum frequency (4)C L = 50 pF, V DD = 1.65 V to 2.7 V-10MHz
11t f(IO)out t r(IO)outOutput rise and fall timeC L = 30 pF, V DD = 2.7 V to 3.6 V-6ns
11t f(IO)out t r(IO)outOutput rise and fall timeC L = 50 pF, V DD = 1.65 V to 2.7 V-17ns
-t EXTIpwPulse width of external signals detected by the EXTI controller-8-ns
  1. BOOT0/PB9 maximum input frequency is 10 kHz (1.65 V < V DD < 2.7 V) and 5 MHz (2.7 V < V DD < 3.6 V).
  2. Guaranteed by design. Not tested in production.
  3. The maximum frequency is defined in Figure 25 .

Figure 25. I/O AC characteristics definition

Absolute Maximum Ratings

Stresses above the absolute maximum ratings listed in Table 15: Voltage characteristics , Table 16: Current characteristics , and Table 17: Thermal characteristics may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Device mission profile (application conditions) is compliant with JEDEC JESD47 Qualification Standard. Extended mission profiles are available on demand.

Table 15. Voltage characteristics

SymbolRatingsMinMaxUnit
V DD -V SSExternal main supply voltage (including V DDA , V DD ) (1)-0.34.0V
V IN (2)Input voltage on FT and FTf pinsV SS - 0.3V DD +4.0V
V IN (2)Input voltage on TC pinsV SS - 0.34.0V
V IN (2)Input voltage on BOOT0V SSV DD + 4.0V
V IN (2)Input voltage on any other pinV SS - 0.34.0V
\∆ V DD \Variations between different V DDx power pins-
\V DDA -V DDx \Variations between any V DDx and V DDA power pins (3)-
\∆ V SS \Variations between all different ground pins-
V ESD(HBM)Electrostatic discharge voltage (human body model)see Section 6.3.11see Section 6.3.11mV

Table 16. Current characteristics

Table 16. Current characteristics

SymbolRatingsMax.Unit
Σ I VDD (2)Total current into sum of all V DD power lines (source) (1)105mA
Σ I VSS (2)Total current out of sum of all V SS ground lines (sink) (1)105mA
I VDD(PIN)Maximum current into each V DD power pin (source) (1)100mA
I VSS(PIN)Maximum current out of each V SS ground pin (sink) (1)100mA
I IOOutput current sunk by any I/O and control pin except FTf pins16mA
I IOOutput current sunk by FTf pins22mA
I IOOutput current sourced by any I/O and control pin-16mA
Σ I IO(PIN) (3)Total output current sunk by sum of all IOs and control pins (4)45mA
Σ I IO(PIN) (3)Total output current sourced by sum of all IOs and control pins-45mA
Σ I IO(PIN)Total output current sunk by sum of all IOs and control pins (2)90mA
Σ I IO(PIN)Total output current sourced by sum of all IOs and control pins (2)-90mA
I INJ(PIN)Injected current on FT, FFf, RST and B pins-5/+0 (5)mA
I INJ(PIN)Injected current on TC pin± 5 (6)mA
Σ I INJ(PIN)Total injected current (sum of all I/O and control pins) (7)± 25mA
  1. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.
  2. These values apply only to STM32L011GxUx part number (UFQFPN28 package).
  3. This current consumption must be correctly distributed over all I/Os and control pins. In particular, it must be located the closest possible to the couple of supply and ground, and distributed on both sides.
  4. Positive current injection is not possible on these I/Os. A negative injection is induced by V IN <VSS . I INJ(PIN) must never be exceeded. Refer to Table 15 for maximum allowed input voltage values.
  5. A positive injection is induced by V IN > V DD while a negative injection is induced by V IN < V SS . I INJ(PIN) must never be exceeded. Refer to Table 15: Voltage characteristics for the maximum allowed input voltage values.
  6. When several inputs are submitted to a current injection, the maximum Σ I INJ(PIN) is the absolute sum of the positive and negative injected currents (instantaneous values).

Table 17. Thermal characteristics

SymbolRatingsValueUnit
T STGStorage temperature range-65 to +150°C
T JMaximum junction temperature150°C

93

Thermal Information

The maximum chip-junction temperature, T J max, in degrees Celsius, may be calculated using the following equation:

T J max = T A max + (P D max × Θ JA )

Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at http://www.st.com. ECOPACK ® is an ST trademark.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
STM32L011F4STMicroelectronics
STM32L011F4U6TRSTMicroelectronics20-UFQFN
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