KSC2073H2TU
NPN Epitaxial Silicon TransistorThe KSC2073H2TU is a npn epitaxial silicon transistor from onsemi. View the full KSC2073H2TU datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
KSC2073H2TU shares its datasheet with KSC2073TU, whose page lists every part number it covers.
Official KSC2073H2TU datasheet (PDF) — the source this page was extracted from.
KSC2073H2TU Key Specifications
| Parameter | Value |
|---|---|
| Polarity | NPN |
| Storage Temperature | -55 to 150 °C |
| DC Current Gain (HFE) | 40 to 140 (VCE=10V, IC=0.5A) |
| HFE Classification H2 | 60 to 125 |
| Collector Current (IC) | 1.5 A |
| Output Capacitance (Cob) | 50 pF typ |
| Junction Temperature (TJ) | 150 °C |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector-Base Voltage (VCBO) | 150 V |
| Collector Cut-Off Current (ICBO) | 10 µA max (VCB=120V) |
| Collector-Emitter Voltage (VCEO) | 150 V |
| Current Gain Bandwidth Product (FT) | 4 MHz typ |
| Collector Dissipation (PC, TC=25°C) | 25 W |
| Collector-Emitter Saturation Voltage VCE(Sat) | 1 V max (IC=500mA, IB=50mA) |
KSC2073H2TU Overview
Part: KSC2073 — onsemi
Type: NPN Epitaxial Silicon Transistor
Description: NPN Epitaxial Silicon Transistor with 150 V Collector-Base Voltage, 1.5 A Collector Current, and designed for TV Vertical Deflection Output.
Operating Conditions:
- Operating temperature: -55 to 150 °C
Absolute Maximum Ratings:
- Max Collector-Base Voltage (V_CBO): 150 V
- Max Collector-Emitter Voltage (V_CEO): 150 V
- Max Emitter-Base Voltage (V_EBO): 5 V
- Max Collector Current (I_C): 1.5 A
- Max Collector Dissipation (P_C): 25 W (T_C = 25 °C)
- Max Junction Temperature (T_J): 150 °C
- Max Storage Temperature (T_STG): -55 to 150 °C
Key Specs:
- Collector-Base Breakdown Voltage (BV_CBO): 150 V min (I_C = 500 mA, I_E = 0)
- Collector-Emitter Breakdown Voltage (BV_CEO): 150 V min (I_C = 10 mA, I_B = 0)
- Emitter-Base Breakdown Voltage (BV_EBO): 5 V min (I_E = 500 mA, I_C = 0)
- Collector Cut-Off Current (I_CBO): 10 mA max (V_CB = 120 V, I_E = 0)
- DC Current Gain (h_FE): 40 min (V_CE = 10 V, I_C = 0.5 A)
- Collector-Emitter Saturation Voltage (V_CE(sat)): 1 V max (I_C = 500 mA, I_B = 50 mA)
- Current Gain Bandwidth Product (f_T): 4 MHz typ (V_CE = 10 V, I_C = 0.5 A)
- Output Capacitance (C_ob): 50 pF typ (V_CB = 10 V, I_E = 0, f = 1 MHz)
Features:
- Complement to KSA940
- TV Vertical Deflection Output
- Pb-Free and Halide Free
Applications:
- TV Vertical Deflection Output
Package:
- TO-220-3LD
KSC2073H2TU Features
- Complement to KSA940
- TV Vertical Deflection Output
- Collector-Base Voltage : V CBO = 150 V
- These Devices are Pb-Free and Halide Free
KSC2073H2TU Electrical Characteristics
(T A = 25 ° C unless otherwise noted.)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BV CBO | Collector-Base Breakdown Voltage | I C = 500 m A, I E = 0 | 150 | - | - | V |
| BV CEO | Collector-Emitter Breakdown Voltage | I C = 10 mA, I B = 0 | 150 | - | - | V |
| BV EBO | Emitter-Base Breakdown Voltage | I E = 500 m A, I C = 0 | 5 | - | - | V |
| I CBO | Collector Cut-Off Current | V CB = 120 V, I E = 0 | - | - | 10 | m A |
| h FE | DC Current Gain | V CE = 10 V, I C = 0.5 A | 40 | 75 | 140 | |
| V CE (sat) | Collector-Emitter Saturation Voltage | I C = 500 mA, I B = 50 mA | - | - | 1 | V |
| f T | Current Gain Bandwidth Product | V CE = 10 V, I C = 0.5 A | - | 4 | - | MHz |
| C ob | Output Capacitance | V CB = 10 V, I E = 0, f = 1 MHz | - | 50 | - | pF |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
KSC2073H2TU Absolute Maximum Ratings
(T A = 25 ° C unless otherwise noted.)
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| V CBO | Collector-Base Voltage | 150 | V |
| V CEO | Collector-Emitter Voltage | 150 | V |
| V EBO | Emitter-Base Voltage | 5 | V |
| I C | Collector Current | 1.5 | A |
| P C | Collector Dissipation (T C = 25 ° C) | 25 | W |
| T J | Junction Temperature | 150 | ° C |
| T STG | Storage Temperature | - 55 X 150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
TO-220-3LD CASE 340AT
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These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
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