KSC2073

Part: KSC2073 — onsemi

Type: NPN Epitaxial Silicon Transistor

Description: NPN epitaxial silicon transistor with a collector-base voltage of 150 V, collector-emitter voltage of 150 V, and a collector current of 1.5 A, designed for TV vertical deflection output.

Operating Conditions:

• Operating temperature: -55 to 150 °C (Junction/Storage)

Absolute Maximum Ratings:

• Max supply voltage: 150 V (Collector-Base, Collector-Emitter)
• Max continuous current: 1.5 A (Collector Current)
• Max junction/storage temperature: 150 °C

Key Specs:

• Collector-Base Breakdown Voltage (BV CBO): 150 V (I C = 500 mA, I E = 0)
• Collector-Emitter Breakdown Voltage (BV CEO): 150 V (I C = 10 mA, I B = 0)
• Emitter-Base Breakdown Voltage (BV EBO): 5 V (I E = 500 mA, I C = 0)
• Collector Cut-Off Current (I CBO): 10 mA max (V CB = 120 V, I E = 0)
• DC Current Gain (h FE): 40 to 140 (V CE = 10 V, I C = 0.5 A)
• Collector-Emitter Saturation Voltage (V CE(sat)): 1 V max (I C = 500 mA, I B = 50 mA)
• Current Gain Bandwidth Product (f T): 4 MHz typ (V CE = 10 V, I C = 0.5 A)
• Output Capacitance (C ob): 50 pF typ (V CB = 10 V, I E = 0, f = 1 MHz)

Features:

• Complement to KSA940
• Pb-Free and Halide Free

Applications:

• TV Vertical Deflection Output

Package:

• TO-220-3LD

• Complement to KSA940
• TV Vertical Deflection Output
• Collector-Base Voltage : V CBO = 150 V
• These Devices are Pb-Free and Halide Free

(T A = 25 ° C unless otherwise noted.)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(T A = 25 ° C unless otherwise noted.)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

TO-220-3LD CASE 340AT