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Electronic Component Datasheets

2,725 components with extracted datasheet data

FM-B2020RGBA-HG

FOSHAN NATIONSTAR OPTOELECTRONICS CO., LTD

Full-color surface mount device (SMD) LED with black frame, high contrast, black and matt packaging, good reliability, long lifespan, and wide viewing angle, designed for indoor display and decoration applications.

Full-color SMD LED2.0mm x 2.0mm x 0.75mm SMD

FM2113

FM

Lithium Battery SOT-23-6 Battery Management RoHS

Battery Protection ICSOT-23-6

FM24V10-G

Ramtron

A 1-megabit nonvolatile Ferroelectric RAM (F-RAM) with a two-wire serial (I2C) interface, offering high endurance, fast no-delay writes, and low power operation.

F-RAM Memory8-pin SOIC

FM25V02A-G

Infineon Technologies

256-Kbit (32K x 8) nonvolatile ferroelectric RAM with 40-MHz SPI interface, 10^14 write endurance, and 151-year data retention

Serial F-RAM Nonvolatile MemorySOIC-8

FOD817AS

onsemi

Transistor Output Optocouplers Opto Phototransistor Output SM-DIP4

Phototransistor Optocoupler4-SMD, Gull Wing

FQP12N60C

Fairchild Semiconductor

12A, 600V N-channel enhancement mode planar stripe DMOS power MOSFET with 0.65 ohm RDS(on), suited for switched mode power supplies, active PFC and lamp ballasts

600V N-Channel Power MOSFETTO-220

FQP30N06L

Fairchild Semiconductor

N-Channel enhancement mode power field effect transistor (MOSFET) optimized for low on-state resistance, superior switching performance, and high energy pulse withstand capability, suitable for automotive, DC/DC converters, and power management applications.

N-Channel MOSFET

FQPF12N60C

Fairchild Semiconductor

600V, 12A N-channel enhancement mode planar stripe DMOS power MOSFET with RDS(on) of 0.65 Ω max, low gate charge and 100% avalanche testing, suited to SMPS, active PFC and lamp ballasts.

600V N-Channel Power MOSFETTO-220F

FRC0402F1004TS

FOJAN

Chip Resistors 0402 1MΩ ±1% 1/16W ±100ppm/℃

Fusible Thick Film Chip Resistor0402

FRC0603F2491TS

FOJAN

Chip Resistor 2.49kΩ ±1% 100mW ±100ppm/°C 0603

Fusible Thick Film Chip Resistor0603

FRM0805FR000TM

FOJAN

FS8205A

EVVO

DUAL N-CHANNEL ENHANCEMENT MODE

Dual N-Channel Enhancement Mode Power MOSFETSOT-23-6

FT232HQ

FTDI

Single Channel 1.8 to 3.3 V 480 Mbps USB Hi-Speed to Serial UART/FIFO IC -QFN-48

Hi-Speed USB to UART/FIFO BridgeQFN-48

FT232RL

FTDI

Single-chip USB 2.0 Full Speed to asynchronous serial UART interface with integrated EEPROM, USB termination resistors and clock generation, requiring no USB-specific firmware

USB UART ICSSOP-28

FT232RL-REEL

FTDI, Future Technology Devices International Ltd

IC USB FS SERIAL UART 28-SSOP

Integrated Circuits (ICs)28-SSOP (0.209", 5.30mm Width)

FT5316DEE

FocalTech Systems Co.,LTD.

Single-chip capacitive touch panel controller IC with built-in MCU, supporting true multi-touch capability using mutual capacitance sensing.

Capacitive Touch Panel ControllerQFN-48

FTC252012S1R0MBCA

Cjiang Technology

¡À20% 35m¦¸ 5.6A 4A 1¦ÌH SMD, 2X2.5MM SMD mount

Power Inductor

FXL0412-1R0

Cjiang Technology

1.0 µH ±20% molded wire-wound SMD power inductor with alloy powder core, low core loss and ultra-low buzz noise, rated 4.4 A saturation and 3.8 A heating current.

Wire Wound Molded SMD Power Inductors

FXL0412-1R5

Cjiang Technology

1.5 µH wire wound molded SMD power inductor (±20%) with alloy powder core, low buzz noise, for DC/DC converters and other power applications

Wire Wound Molded SMD Power Inductors

FXL0412-2R2

Cjiang Technology

2.2 µH ±20% molded wire-wound SMD power inductor with alloy powder core, low buzz noise, 125 °C max operation, for DC/DC converters and compact power applications

Wire Wound Molded SMD Power Inductors

FXL0412-3R3

Cjiang Technology

3.3 µH ±20% wire wound molded SMD power inductor with alloy powder core, low buzz noise and 125 °C max operating temperature

Wire Wound Molded SMD Power Inductors

FXL0412-4R7

Cjiang Technology

4.7 μH ±20% molded wire-wound SMD power inductor with alloy powder core, 195 mΩ max DCR, 1.80 A max saturation current and 1.45 A max heating current.

Wire Wound Molded SMD Power Inductors

FXL0412-R15

Cjiang Technology

0.15 µH ±20% wire wound molded SMD power inductor with 9 mΩ max DCR, 12 A min saturation current and 6.8 A min heating rating current, rated to 125 °C total temperature.

Wire Wound Molded SMD Power Inductors

FXL0412-R22

Cjiang Technology

0.22 µH ±20% wire wound molded SMD power inductor in the FXL0412 size, with 11 mΩ max DCR and 8.8 A max saturation current

Wire Wound Molded SMD Power Inductors

FXL0412-R33

Cjiang Technology

0.33 µH molded wire-wound SMD power inductor (±20%) in the FXL0412 series, with alloy powder core, low buzz noise, and 125 °C max operating temperature

Wire Wound Molded SMD Power Inductors

FXL0412-R47

Cjiang Technology

0.47 µH ±20% wire wound molded SMD power inductor with 21 mΩ max DCR, 5.4 A max saturation current and 5.2 A max heating rating current, in the 4.4x4.2x1.0 mm FXL0412 size

Wire Wound Molded SMD Power Inductors

FXL0412-R68

Cjiang Technology

Wire wound molded SMD power inductor, 0.68 µH ±20%, 36 mΩ max DCR, with low core loss and ultra-low buzz noise in a 4.4x4.2x1.0mm body, intended for DC/DC converters.

Wire Wound Molded SMD Power Inductors4.4x4.2x1.0mm

FXL0420

Cjiang Technology

FXL0420 series wire wound molded SMD power inductor, 4.4x4.2x1.8mm, available from 0.1 to 22 uH (+/-20%) with saturation current up to 22A typ and low DCR

Wire Wound Molded SMD Power Inductors

FXL0420-100-M

Cjiang Technology

10 µH ±20% molded wire-wound SMD power inductor with alloy powder core, low buzz noise, rated 1.6 A Isat (max) and 1.3 A Irms (max), 125 °C maximum operation.

Wire Wound Molded SMD Power InductorsSMD,4.4x4.2mm

FXL0420-1R0-M

Cjiang Technology

1.0 μH ±20% wire wound molded SMD power inductor with alloy powder core, 5.6A max saturation current, 27 mΩ max DCR, in a 4.4 x 4.2 x 1.8 mm body

Wire Wound Molded SMD Power Inductors
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